Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC DIM D 00 P LTR DESCRIPTION DATE DWN APVD C REV PER ECR-08-027811 04NOV2008 IL SY C1 REV PER ECR-12-009459 28MAY2012 CZ SZ .150 DIM M D .130 2 PLC .185 2 PLC C REVISIONS
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04NOV2008
ECR-08-027811
ECR-12-009459
28MAY2012
17FEB05
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inverter schematic
Abstract: PMSM stm32 L6390 STM32 STD5NK52ZD-1 STM3210B-EVAL Power INVERTER schematic circuit 3 phase inverter 3phase MOSFET INVERTER
Text: STEVAL-IHM021V1 100 W 3-phase inverter for speed FOC of 3-phase PMSM motor drive based on the L6390 and STD5NK52ZD-1 Data Brief Features • Input voltage wide range 110 Vac and 230 Vac ■ Maximum power-up to 100 W at 230 Vac input voltage ■ Power MOSFET STD5NK52ZD-1(4.4 A 520 V)
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STEVAL-IHM021V1
L6390
STD5NK52ZD-1
STD5NK52ZD-1
STM3210B-EVAL
inverter schematic
PMSM stm32
STM32
STM3210B-EVAL
Power INVERTER schematic circuit
3 phase inverter
3phase MOSFET INVERTER
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Untitled
Abstract: No abstract text available
Text: TDA7479 Single chip RDS demodulator + filter Features • Very high RDS demodulation quality with improved digital signal processing ■ High performance, 57 kHz bandpass filter 8th order ■ FIlter adjustment free and without external components ■ Purely digitaL RDS Demodulation without
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TDA7479
TSSOP16
TDA7479
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STL11NH3LL
Abstract: schematic diagram of energy saving device st marking code JESD97 11NH3L STL11
Text: STL11NH3LL N-channel 30 V, 0.0078 Ω , 11 A, PowerFLAT 3.3 x 3.3 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL11NH3LL 30 V < 0.0092 Ω 11 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio
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STL11NH3LL
2002/95/EC
STL11NH3LL
schematic diagram of energy saving device
st marking code
JESD97
11NH3L
STL11
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D15NF10
Abstract: STD15NF10 75A12 JESD97 STD15NF10T4
Text: STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type VDSSS RDS on max ID STD15NF10 100 V < 0.065 Ω 23 A 3 1 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STD15NF10
D15NF10
STD15NF10
75A12
JESD97
STD15NF10T4
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STM11
Abstract: marking DF DFN-8 STM11C10DF4P28F
Text: STM11 Power control switch Features • Operating voltage 2.5 V to 5.5 V ■ Supply current of 2.0 µA typ. ■ Low on-resistance P-channel MOSFET: – Continuous drain current 3.7 A – Typical RDS(ON) of 0.065 Ω at 4.5 V ■ Slew rate controlled switching to prevent
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STM11
STM11
marking DF DFN-8
STM11C10DF4P28F
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marking BS SOT23
Abstract: 2N7000 circuits
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application
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2N7000
2N7002
OT23-3L,
OT23-3L
marking BS SOT23
2N7000 circuits
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TMC332-EVAL
Abstract: kt42jm06 24V BIPOLAR STEPPER MOTOR KT42JM06-551 riacon transistor r1009 TMC603 tmc428 eval board v2 R1009 SPEED CONTROL of DC MOTOR using 3 phase bridge co
Text: TMC332 Evaluation Board Manual Version: 2.10 January 8, 2010 TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg, Germany Phone +49-40-51 48 06 – 0, FAX: +49-40-51 48 06 – 60 http://www.trinamic.com TMC332 Evaluation Board Manual V. 2.10 / January 8, 2010
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TMC332
TMC332-EVAL
kt42jm06
24V BIPOLAR STEPPER MOTOR
KT42JM06-551
riacon
transistor r1009
TMC603
tmc428 eval board v2
R1009
SPEED CONTROL of DC MOTOR using 3 phase bridge co
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STM11
Abstract: st mosfet UC 3245 DFN-8 stm111
Text: STM11 Power control switch Features • Operating voltage 2.5 V to 5.5 V ■ Supply current of 2.0 µA typ. ■ Low on-resistance P-channel MOSFET: – Continuous drain current 3.7 A – Typical RDS(ON) of 0.065 Ω at 4.5 V ■ Slew rate controlled switching to prevent
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STM11
STM11
st mosfet
UC 3245
DFN-8
stm111
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Untitled
Abstract: No abstract text available
Text: STL11NH3LL N-channel 30 V, 0.0078 Ω , 11 A, PowerFLAT 3.3 x 3.3 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL11NH3LL 30 V < 0.0092 Ω 11 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio
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STL11NH3LL
2002/95/EC
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ST1S10
Abstract: AN2620 application diagram ST1S10 st c447 STMicroelectronics C447 C3216X7R1475K equivalent diode for C447 C1005X5R1E104K GRM319R71H104KA01 GRM32ER61C226KE20L
Text: AN2620 Application note 3 A high-frequency synchronous 900 kHz step-down converter based on the ST1S10 Introduction The ST1S10 is a step-down DC-DC converter with an optimized inhibit function for powering high-voltage LCD applications and low-voltage digital core HDD applications. Generally, it
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AN2620
ST1S10
ST1S10
AN2620
application diagram ST1S10
st c447
STMicroelectronics C447
C3216X7R1475K
equivalent diode for C447
C1005X5R1E104K
GRM319R71H104KA01
GRM32ER61C226KE20L
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Untitled
Abstract: No abstract text available
Text: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 1 ■ Very high frequency inverters, UPS
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STGY50NC60WD
Max247
GY50NC60WD
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GY50NC60WD
Abstract: STGY50NC60WD
Text: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■
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STGY50NC60WD
Max247
GY50NC60WD
GY50NC60WD
STGY50NC60WD
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uart emulator
Abstract: AN2800 ST232 STM8S
Text: AN2800 Application note STM8A UART emulator Introduction This application note describes a technique to emulate the universal asynchronous receiver transmitter UART hardware peripheral, through the microcontroller medium end timer (TIMER3), without the use of additional hardware.
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AN2800
uart emulator
AN2800
ST232
STM8S
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ST2N
Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application
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2N7000
2N7002
OT23-3L,
OT23-3L
ST2N
2N7002
2N7000
ST2N transistor
2n7000 equivalents
2n7000 equivalent
2N7002 MARKING
DSS SOT23
2N7000G
JESD97
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SPC560B60
Abstract: SPC560B54 SPC560B54x SPC560B64x SPC560B64 spc560b SPC560B64L7 IC ap 4614 Nexus S JTAG pins LQFP176
Text: SPC560B54x SPC560B60x, SPC560B64x 32-bit MCU family built on the Power Architecture for automotive body electronics applications Data brief Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ High performance 64 MHz e200z0h CPU – 32-bit Power Architecture™ book E CPU
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SPC560B54x
SPC560B60x,
SPC560B64x
32-bit
e200z0h
16-channel
LQFP100)
LQFP176)
SPC560B60
SPC560B54
SPC560B54x
SPC560B64x
SPC560B64
spc560b
SPC560B64L7
IC ap 4614
Nexus S JTAG pins
LQFP176
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Untitled
Abstract: No abstract text available
Text: STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type VDSSS RDS on max ID STD15NF10 100 V < 0.065 Ω 23 A 3 1 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STD15NF10
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15n3l
Abstract: JESD97 STL15N3LLH5
Text: STL15N3LLH5 N-channel 30 V, 0.0045 Ω, 15 A, PowerFLAT 3.3 x 3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL15N3LLH5 30 V < 0.0054 Ω 15 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL15N3LLH5
15n3l
JESD97
STL15N3LLH5
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RDS decoder
Abstract: Biphase space decoder TDA7479 TDA7 E-TDA7479AD Tube 4-400 tube fm radio diagram E-TDA7479D JESD97 TSSOP16
Text: TDA7479 Single chip RDS demodulator + filter Features • Very high RDS demodulation quality with improved digital signal processing ■ High performance, 57 kHz bandpass filter 8th order ■ FIlter adjustment free and without external components ■ Purely digitaL RDS Demodulation without
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TDA7479
TSSOP16
TDA7479
RDS decoder
Biphase space decoder
TDA7
E-TDA7479AD
Tube 4-400
tube fm radio diagram
E-TDA7479D
JESD97
TSSOP16
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TSSOP14
Abstract: No abstract text available
Text: DATA SHEET AS5163 12 BIT AUTOMOTIVE Angle Position Sensor General Description The AS5163 is a contactless magnetic angle position sensor for accurate angular measurement over a full turn of 360°. A sub range can be programmed to achieve the best resolution for the application. It is a system-on-chip,
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AS5163
AS5163
com/AS5163
TSSOP14
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AS5163 14 BIT AUTOMOTIVE Angle Position Sensor General Description The AS5163 is a contactless magnetic angle position sensor for accurate angular measurement over a full turn of 360°. A sub range can be programmed to achieve the best resolution for the application. It is a system-on-chip,
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AS5163
AS5163
com/AS5163
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94V-0 POLYCARBONATE
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR A BACK HOUSING SUB-ASSEMBLY 1 D DESCRIPTION DATE ECO-13-008665 DWN APVD JM 04JUN2013 SJ MATERIAL: -FRONT HOUSING - POLYCARBONATE, 94V-0 RATED.
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ECO-13-008665
04JUN2013
04NOV2008
94V-0 POLYCARBONATE
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GY50NC60WD
Abstract: No abstract text available
Text: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■
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STGY50NC60WD
Max247
GY50NC60WD
Max247
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Untitled
Abstract: No abstract text available
Text: T H I S DR AW I NG IS UNPUBL I S H E D . DI F F US I ON R E S T R E I N T E _ RELEASED F OR P U B L I C A T I O N LIBRE A L A DI F F U S I O N BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION. LOC IsIONS rev D I ST ALL RIGHTS RESERVED.
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12MAR2004
09MAY2006
04NOV2008
MAR2000
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