Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD B REV; ECO-13-004517 13MAR2013 GG RA C REV; ECO-13-009275 04JUN2013 GG RA 34.51 [ 1.359 ]
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ECO-13-004517
13MAR2013
ECO-13-009275
04JUN2013
2002/95/EC
17APR2008
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR B 34.51 [ 1.359 ] 1 DESCRIPTION DATE REV; ECO-13-009275 DWN APVD GG 04JUN2013 RA MATERIAL: HOUSING - UL 94V-0 RATED ABS.
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ECO-13-009275
04JUN2013
2002/95/EC
17APR2008
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Untitled
Abstract: No abstract text available
Text: Lock All Fields Dimensioning and tolerancing per ASME Y14.5M-2009 T2 REPLACED BY CUSTOMER ACCESSIBLE PRODUCTION DRAWING 04JUN2013 XZ LZ SE &86720(5$&&(66,%/( PRODUCTIO1DRAWING 466323 X. ZHAO L. ZHANG L. ZHANG SIDE FEED HDM APPLICATOR 466323 T2
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5M-2009
04JUN2013
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94V-0 POLYCARBONATE
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR A BACK HOUSING SUB-ASSEMBLY 1 D DESCRIPTION DATE ECO-13-008665 DWN APVD JM 04JUN2013 SJ MATERIAL: -FRONT HOUSING - POLYCARBONATE, 94V-0 RATED.
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ECO-13-008665
04JUN2013
04NOV2008
94V-0 POLYCARBONATE
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Untitled
Abstract: No abstract text available
Text: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220
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STGB30V60DF,
STGP30V60DF,
STGW30V60DF,
STGWT30V60DF
O-220
O-247
DocID024361
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GW40V60DF
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 2 • Tail-less switching off
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STGB20V60DF,
STGP20V60DF,
STGW20V60DF,
STGWT20V60DF
O-220
O-247
DocID024360
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00081 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1 • Very low Qg
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STL220N3LLH7
AM15540v2
DocID024732
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stm32f407xx
Abstract: STM32f4xx reference manual
Text: STM32F405xx STM32F407xx ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera Datasheet - production data FBGA • LQFP64 10 x 10 mm LQFP100 (14 × 14 mm) LQFP144 (20 × 20 mm)
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STM32F405xx
STM32F407xx
210DMIPS,
Flash/192
LQFP64
LQFP100
LQFP144
LQFP176
WLCSP90
UFBGA176
stm32f407xx
STM32f4xx reference manual
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Untitled
Abstract: No abstract text available
Text: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution
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STGW60V60F
O-247
DocID024701
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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Untitled
Abstract: No abstract text available
Text: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max STF18N60M2 650 V 0.28 Ω ID 13 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation
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STF18N60M2
O-220FP
O-220FP
DocID024729
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GW40V60DF
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 3 1 1 D2PAK 2 VDS @ TJmax RDS on max ID
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STB25N80K5,
STF25N80K5,
STP25N80K5,
STW25N80K5
O-220FP,
O-220
O-247
STB25N80K5
O-220FP
STF25N80K5
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GW60V60DF
Abstract: No abstract text available
Text: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.85 V (typ.)
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STGW60V60DF
STGWT60V60DF
O-247
DocID024154
GW60V60DF
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STGB4
Abstract: No abstract text available
Text: STGB40V60F, STGP40V60F, STGW40V60F 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 1 3 D2PAK 1 2 TO-220 • Tail-less switching off
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STGB40V60F,
STGP40V60F,
STGW40V60F
O-220
O-247
DocID024700
STGB4
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gw60v60
Abstract: No abstract text available
Text: STGW60V60F 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 • Low saturation voltage: VCE sat = 1.85 V (typ.)
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STGW60V60F
O-247
DocID024701
gw60v60
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Untitled
Abstract: No abstract text available
Text: MBRF10CT 10 Amp. Schottky Barrier Rectifier ITO-220AB 12 Current 10 A Voltage 45 to 200 V 3 1 2 Case 3 Common Cathode Suffix "C" FEATURES Ideal for automated placement Low power losses, high efficiency High surge current capability Guarding for overvoltage protection
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MBRF10CT
ITO-220AB
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
ITO-220AB.
Jun-13
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Untitled
Abstract: No abstract text available
Text: MBRF20CT 20 Amp. Schottky Barrier Rectifier ITO-220AB 12 Current 20 A Voltage 45 to 200 V 3 1 2 Case 3 Common Cathode Suffix "C" FEATURES Ideal for automated placement Low power losses, high efficiency High surge current capability Guarding for overvoltage protection
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MBRF20CT
ITO-220AB
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
ITO-220AB.
Jun-13
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Untitled
Abstract: No abstract text available
Text: Data Sheet AKU340 Analog MEMS Microphone Data Sheet AKU340 Analog MEMS Microphone Datasheet Part number s AKU340 Package type LGA, bottom port, metal lid Data sheet revision 1.0 Release date 4 June 2013 Document number DS26-1.0 AKU340 Data Sheet Notes Specifications are subject to change without notice.
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AKU340
DS26-1
AKU340
04Jun2013
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stgw40v60d
Abstract: GW40V60DF
Text: STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A
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STGFW40V60DF,
STGW40V60DF,
STGWT40V60DF
O-247
DocID024402
stgw40v60d
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STF18N60M2 650 V 0.28 Ω 13 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation
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STF18N60M2
O-220FP
O-220FP
DocID024729
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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PDF
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00085 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1
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STL220N3LLH7
AM15540v2
DocID024732
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