Si9407AEY
Abstract: DSA0016549
Text: Si9407AEY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si9407AEY
S-53709--Rev.
04-Aug-97
DSA0016549
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T REUEASED BY ^ 0 0 EU E C TR O N IC S FO R AUU C O R P O R A T IO N . P U B U IC A T IO N R IG H T S R E V IS IO N S RESERVED. H LTR V 88,9 8 5 ,4 D D E S C R IP T IO N DATE DWN A PVD -97
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2-164045-1
Abstract: NE-48
Text: 4 2 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T R EU EA SED FO R PU B U IC ATIO N R EVISIO N S - >- AUU RIGHTS R ESER VED . By - H LTR W2 88,9 D E S C R IP T IO N DATE REVISED PER E C O - 1 1 - 0 0 5 2 9 4 DWN APVD RK HMR 02APR1 85,4 83,4
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55x45'
02APR11
04AUG97
2-164045-1
NE-48
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Untitled
Abstract: No abstract text available
Text: 8 6 RFIIffaSffTTD FR39R FTOmiOIBSOGN THIS DRAWING IS UNPUBLISHED. ia 7^9- LOC ALL RIGHTS RESERVED. BY TYCO D IST AD elzc W oA K S REVISIONS 00 LTR DESCRIPTION DATE 20 F E B 0 4 REV PER EC 0S1 2 - 0 4 1 4 - 0 3 A A HOUSING CONTACT MATERIAL: A •DIM A _ D ran rwi nfcn n n nyn nsn nfcn rwi frtn
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FR39R
31MAR2000
04AUG97
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