Si1411DH
Abstract: No abstract text available
Text: SPICE Device Model Si1411DH Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1411DH
18-Jul-08
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Si7356ADP
Abstract: No abstract text available
Text: SPICE Device Model Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7356ADP
18-Jul-08
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SMR1DZ
Abstract: No abstract text available
Text: SMR1DZ/SMR3DZ Z-Foil Technology Vishay Foil Resistors Ultra High Precision Z-Foil Molded Surface Mount Resistor with TCR down to ± 0.05 ppm/°C, PCR of ± 5 ppm at Rated Power and Load Life Stability of ± 0.005 % FEATURES P R O D U C T INTRODUCTION The SMRxDZ is a precision molded surface mountable
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08-Apr-05
SMR1DZ
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Untitled
Abstract: No abstract text available
Text: SiE832DF Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE832DF
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI s ct Features • ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash (XFlash) with read-out protection capability, In-Application Programming
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ST7L05,
ST7L09
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Untitled
Abstract: No abstract text available
Text: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI Features • ■ ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash XFlash with read-out protection capability, In-Application Programming
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ST7L05,
ST7L09
ST7FL09Y0MBE
\TEMP\SGST\ST7FL09Y0MBE
21-Aug-2007
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Untitled
Abstract: No abstract text available
Text: TLWR/Y8600 Vishay Semiconductors TELUX FEATURES • Utilizing one of the world’s brightest AS AllnGaP technologies • High luminous flux e3 • Supreme heat dissipation: RthJP is 90 K/W • High operating temperature: Tamb = - 40 to + 110 °C • Meets SAE and ECE color requirements for the
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TLWR/Y8600
2002/95/EC
2002/96/EC
J-STD-020C
JESD22-A114-B
08-Apr-05
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SiE810DF
Abstract: SiE810DF-T1-E3 S-6247
Text: SiE810DF Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PowerPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE810DF
08-Apr-05
SiE810DF-T1-E3
S-6247
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ICF CP 1005
Abstract: JRC 7005 AN1324 HE10 ST7L05 ST7L09 H 941
Text: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI Features • ■ ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash XFlash with read-out protection capability, In-Application Programming
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ST7L05,
ST7L09
ICF CP 1005
JRC 7005
AN1324
HE10
ST7L05
ST7L09
H 941
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C
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UL94-V0
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74355
Abstract: sup90n08-4m8p
Text: SPICE Device Model SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90N08-4m8P
18-Jul-08
74355
sup90n08-4m8p
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70745
Abstract: SUP75N03-04 SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263
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SUP/SUB75N03-04
O-220AB
O-263
SUB75N03-04
SUP75N03-04
SUP75N03-04-E3
SUB75N03-04-E3
18-Jul-08
70745
SUP75N03-04
SUB75N03-04
SUB75N03-04-E3
SUP75N03-04-E3
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Untitled
Abstract: No abstract text available
Text: SiE810DF Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PowerPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE810DF
08-Apr-05
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Digital Weighing Scale schematic
Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Text: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0086-0802
Digital Weighing Scale schematic
tedea 1042
Tedea-Huntleigh model 1022
schematic diagram to convert 230VAC to 5VDC POWER
tedea huntleigh load cell 3410
tedea load cell 1004
Weighing scale sensor gozinta
Tedea-Huntleigh 9010
manual weight indicator vt200
tedea huntleigh load cell 3411
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jrc 741
Abstract: JRC 7005 ST7FL09Y0MA 620 TG On Semi ST7L09 ICF CP 1005 16-pins 300mil SO16
Text: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI Features • ■ ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash XFlash with read-out protection capability, In-Application Programming
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ST7L05,
ST7L09
i074s
ST7FL05Y0MBE
ST7L05
jrc 741
JRC 7005
ST7FL09Y0MA
620 TG On Semi
ST7L09
ICF CP 1005
16-pins 300mil SO16
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TO-252-4L
Abstract: T-0657 0209 00222 TO252-4L
Text: Package Information Vishay Siliconix TO252-4L CASE OUTLINE E E2 A A 0.254 M C A B C C D1 L B H D E1 L2 A1 b1 X4 p(X4) b(X5) DETAIL “A” 0.254 M C A B H B L1 SECTION B-B DETAIL “A” SYMBOL b1 MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 2.22 2.38 0.087 0.094
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O252-4L
T-06572-Rev.
04-Dec-06
TO-252-4L
T-0657
0209
00222
TO252-4L
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Si5857DU-T1-E3
Abstract: 62480
Text: Si5857DU Vishay Siliconix New Product P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • LITTLE FOOT Plus Power MOSFET • New Thermally Enhanced PowerPAK®
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Si5857DU
08-Apr-05
Si5857DU-T1-E3
62480
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EIA-481-3
Abstract: crimp dimension tolerance
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL ICONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: FOR 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS
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15KPCS
16-FEB-09
09-AUG-08
30-JUN-08
EIA-481-3
10Kpcs
100Kpcs
crimp dimension tolerance
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624-82
Abstract: 62482
Text: SiE830DF Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Extremely Low Qgd WFET Technology for Low Switching Losses RoHS • Ultra Low Thermal Resistance Using COMPLIANT ® Top-Exposed PolarPAK Package for Double-Sided Cooling
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SiE830DF
08-Apr-05
624-82
62482
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Si1411DH
Abstract: SI1411
Text: SPICE Device Model Si1411DH Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1411DH
netw14
S-62426Rev.
04-Dec-06
SI1411
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C FLAMABILITY RATING: UL94-V0
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UL94-V0
31-DEC-07
26-FEB-07
04-DEC-06
15-MAR-04
04-APR-01
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SUP75N03-04
Abstract: SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263
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SUP/SUB75N03-04
O-220AB
O-263
SUB75N03-04
SUP75N03-04
SUP75N03-04-E3
SUB75N03-04-E3
08-Apr-05
SUP75N03-04
SUB75N03-04
SUB75N03-04-E3
SUP75N03-04-E3
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MIL-S-7742
Abstract: 526-33AB47-202 8-32UNC-2A 526-33ab
Text: A. HONEYWELL PART NUMBER REV DOCUMENT CHANGED BY CHECK B 0026692 CH 04DEC06 RK 526-33AB 47-202 B B TH ERMISTOR 9 2 6 — 202 V M V — B01 WIRE 2 4 AWG 7 - 3 2 STRANDED SILVER PLATED C O P P E R BLACK TEFLON INSULATION HOUSING 3 1 6 OR 3 1 6L STA IN LESS STEEL
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526-33AB47-202
04DEC06
32UNC-2A
202VMVâ
01AUG06
5M-1994
33AB47â
MIL-S-7742
526-33AB47-202
8-32UNC-2A
526-33ab
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B152
Abstract: ASTM-D-3295
Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 02 DESCRIPTION LTR P2 DATE 04DEC06 REV PER ECR 06-028261 DWN APVD JR TM D D 1\ STAMPED AMP, AS SHOWN 2 ”A ”±.003 DIA
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24mm2
QQ-N-290
D3295
11AUG03
12AUG03
31MAR2000
B152
ASTM-D-3295
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