048 itt diode
Abstract: No abstract text available
Text: PD - 94905 IRG4BC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC10UDPbF
O-220AB
140ns
O-220AB.
048 itt diode
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Untitled
Abstract: No abstract text available
Text: PD - 94905 IRG4BC10UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4BC10UDPbF
O-220AB
140ns
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IRG4BC10UD
Abstract: No abstract text available
Text: PD - 94905 IRG4BC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC10UDPbF
O-220AB
140ns
IRG4BC10UD
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Untitled
Abstract: No abstract text available
Text: PD - 94905 IRG4BC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC10UDPbF
O-220AB
140ns
cTO-220AB.
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bbc 598 479 DIODE
Abstract: cannon CA3106ke strd 5441 2da31p crimp tool and positioner MS3191-1 crimper specification ntp 3100 SM 5126 BP Radial arinc 600 617 411 057 MS27491-22 MS3165
Text: Military/Aerospace May we suggest you contact the ITT Cannon technical sales office nearest you for immediate assistance with technical questions, order placement or simply to discuss your next project. Contents Series Prefix Description Page Rack and Panel Connectors
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MIL-C-81659
MIL-C-83733
MIL-C-38999
MIL-C-26482,
MIL-C-5015
MS/CV345*
MIL-C-38999,
M39029/63-368
M39029/64-369
bbc 598 479 DIODE
cannon CA3106ke
strd 5441
2da31p crimp tool and positioner
MS3191-1 crimper specification
ntp 3100
SM 5126 BP
Radial arinc 600 617 411 057
MS27491-22
MS3165
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irf 460A
Abstract: IRF3710S AN-994 IRF3710
Text: Previous Datasheet Index Next Data Sheet PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRF3710S
irf 460A
IRF3710S
AN-994
IRF3710
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irf 460A
Abstract: IRF3710S IRF3710s equivalent mosfet irf3710 AN-994 IRF3710
Text: PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.028Ω G ID = 46A
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IRF3710S
irf 460A
IRF3710S
IRF3710s equivalent
mosfet irf3710
AN-994
IRF3710
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Aero-Electric Connector D38999
Abstract: KPTM SERIES CONNECTOR HELLERMAN DEUTSCH 770-001A
Text: Four Reasons to Choose Composites for Your Next Interconnect Application Glenair's composite interconnect components are manufactured from high-grade engineering thermoplastics for the toughest application environments. Specifically geared for high-performance air, sea, land and
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VB34
Abstract: kdi switch ITT 710 VB-25-A VB23A
Text: BROADBAND SP3T SWITCH SERIES VM/VB-A REFLECTIVE AND ABSORPTIVE 0.02-18 GHz _ 1.40 _ 3.56 _ 1.200 _ 3 048 GENERAL INFORMATION: Series VM and VB-A broadband switches are medium power devices that operate over relatively wide frequency ranges. Carefully selected diodes
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SD5600
Abstract: 5610 oc
Text: SD5600/5610 Optoschm itt Detector FEATURES • TO-46 metal can package • 6° nominal acceptance angle • High noise immunity output . TTL/LSTTL/CMOS compatible . Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to
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SD5600/5610
SD5600)
SD5610)
SE3450/5450,
SE3455/5455
SE3470/5470
SD5600/5610
on-40
-44-V
SD5600
5610 oc
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477J
Abstract: SD 5455 sd 5491
Text: SE3455/5455 GaAs Infrared Emitting Diode FE A TU R ES • TO -46 m etal can package • C hoice of flat w indow or lensed package • 90° or 20° nom inal beam angle option • 935 nm w avelength • W ide operating tem perature range • Ideal fo r high pulsed current applications
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SE3455/5455
SD3421/5421
SD3443/5443/5491
SE3455
SE5455
E3455
477J
SD 5455
sd 5491
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lN34A
Abstract: Germanium itt
Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap
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1N34A
1N38A
1N388
lN34A
Germanium itt
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667 transistor ecb
Abstract: EVL32-060 A50L-0001-0109
Text: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)
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O-237
667 transistor ecb
EVL32-060 A50L-0001-0109
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AF02
Abstract: 2SJ198 2SK1484 K0852
Text: -y 5 7 • h ~ mos M O S Field Effect Transistor 2 P x 4 J 1 9 8 MOS F E T 2SJ198 a P f- ^ * M m MOS F E T T, 5 V iz j: § S IC mm -y f- > r m ^ - v t o *M O S FET l i t 5.2 MAX. <, X >f y f- > 7 ? f- ^ - ? ^ i K > D C - D C X ' f «y f - i - ^ i S T " i “ o
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2SJ198
2SJ198
2SK1484
IEI-620)
AF02
K0852
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TCM29C14A
Abstract: d3314
Text: TCM129C13A, TCM129C14A, TCM129C16A, TCM129C17A, TCM29C13A, TCM29C14A, TCM29C16A, TCM29C17A COMBINED SINGLE-CHIP PCM CODEC AND FILTER D3314, A U G U S T 1 9 8 9 - R E V IS E D D EC EM BER 1990 FEATURE TABLE Replaces Use of TCM 2910A and TCM 2911A in Tandem with TCM 2912B/C
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TCM129C13A,
TCM129C14A,
TCM129C16A,
TCM129C17A,
TCM29C13A,
TCM29C14A,
TCM29C16A,
TCM29C17A
D3314,
2912B/C
TCM29C14A
d3314
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Untitled
Abstract: No abstract text available
Text: TCM29C13, TCM29C14, TCM29C16, TCM29C17, TCM129C13, TCM129C14, TCM129C16, TCM129C17 COMBINED SINGLE-CHIP PCM CODEC AND FILTER SCTS011Q - APRIL 1986 - REVISED JULY 1996 Replaces Use of TCM2910A In Tandem With TCM2912C Reliable Silicon-Gate CMOS Technology Low Power Consumption:
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TCM29C13,
TCM29C14,
TCM29C16,
TCM29C17,
TCM129C13,
TCM129C14,
TCM129C16,
TCM129C17
SCTS011Q
TCM2910A
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TCM29C14A
Abstract: No abstract text available
Text: TCM29C13A, TCM29C14A, TCM29C16A, TCM29C17A, TCM129C13A, TCM129C14A, TCM129C16A, TCM129C17A COMBINED SINGLE-CHIP PCM CODEC AND FILTER _ SCTS030D - A U G U S T 1989 - REVISED JULY 1996 • • • • • • Replace Use of TCM2910A and TCM2911A
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TCM29C13A,
TCM29C14A,
TCM29C16A,
TCM29C17A,
TCM129C13A,
TCM129C14A,
TCM129C16A,
TCM129C17A
SCTS030D
TCM2910A
TCM29C14A
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n373
Abstract: No abstract text available
Text: TCM38C17 QCombo FOUR-CHANNEL QUAD PCM COMBO S L W S 0 40 - J U N E 1996 Single 5-V Supply DGG PACKAGE (TOP VIEW) R B IA S [ Reliable Submicron Sillcon-Gate CMOS Technology Low Power Consumption (per Channel) - Operating Mode. . . 40 mW Typical - Power-Down Mode. . . 1 mW Typical
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TCM38C17
TCM29C13
S040-JUNE
D102S22
n373
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Untitled
Abstract: No abstract text available
Text: IND: -25 Advanced Micro Devices PALLV22V10Z-25 Low-Voltage, Zero-Power 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ 10 macrocells programmable as registered or combinatorial, and active high or active low to match application needs
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PALLV22V10Z-25
24-Pin
05S7SSS
PD3024
300-mil
28-Pin
004b7b2
06751F
PALLV22V1OZ-25
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3067B
Abstract: No abstract text available
Text: TP3064B, TP3067B, TP13064B, TP13067B MONOLITHIC SERIAL INTERFACE COMBINED PCM CODEC AND FILTER SC TS031D- MAY 1990-REVISED JULY 1996 • Complete PCM Codec and Filtering Systems Include: - Transmit High-Pass and Low-Pass Filtering - Receive Low-Pass Filter With sin x /x
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TP3064B,
TP3067B,
TP13064B,
TP13067B
TS031D-
1990-REVISED
TP13064B
TP3064B
TP3067B
3067B
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Untitled
Abstract: No abstract text available
Text: & Microchip P I C 1 6 C 5 X EPROM-Based 8-Bit CMOS Microcontroller Series • Oscillator start-up tim er • W atchdog tim er WDT with its own on-chip RC oscillator for reliable operation • Security EPROM fuse for code-protection • Power saving SLEEP mode
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12-bit
PIC16C54
PIC16C55
PIC16C56
PIC16C57
PIC16C54
PIC16C55
PIC16C57-RCI/S
PIC16C54-LPE/SS
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Untitled
Abstract: No abstract text available
Text: •J» GOULD T1 /CEPT Digital Trunk PLL Electronics Preliminary Data Sheet COMMUNI CATION S8940 Digital Trunk Transmission Links • ST-BUS Clock and Frame Pulse source Features • Provides T1 clock at 1.544 MHz locked to input frame pulse • Sources CEPT 30 + 2 Digital Trunk/ST-BUS clock
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S8940
S8940
sync940
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Untitled
Abstract: No abstract text available
Text: TCM29C23, TCM129C23 VARIABLE-FREQUENCY PCM OR DSP INTERFACE S C T S 0 2 9 A -A U G U S T 1989 -R E V IS E D JULY 1996 • Combined ADC, DAC, and Filters • Extended Variable Frequency Operation - Master Clock Up to 4.096 MHz - Sample Rates Up to 16 kHz - Passband Up to 6 kHz
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TCM29C23,
TCM129C23
129C23
01024t
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY S E M I C O N D U C T O R S D S 3 4 7 9 - 4.0 VP2615 H .261 DECODER Supersedes January 1996 Edition, DS3479-3.0 FEATURES DESCRIPTION Inputs run length coded transform data O u tp u ts 8 bit pixels in YU V block form at U p to fu ll C IF resolution and 30 Hz fram e rates
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VP2615
DS3479-3
VP520S
VP2611
VP2614
VP2615
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