ak17p
Abstract: RISCwatch ACE FLASH mictor layout RISCwatch Trace connector 20 pin FF672 Virtex-II Prototype platform XC3090 XC4005
Text: Virtex-II Pro Prototype Platform User Guide UG027 / PN 0402044 v1.6 October 25, 2002 R Virtex-II Pro Prototype Platform User Guide www.xilinx.com 1-800-255-7778 UG027 / PN 0402044 (v1.6) October 25, 2002 R "Xilinx" and the Xilinx logo shown above are registered trademarks of Xilinx, Inc. Any rights not expressly granted herein are reserved.
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UG027
XC2064,
XC3090,
XC4005,
XC5210
C405TRCCYCLE
C405TRCODDEXECUTIONSTATUS
C405TRCEVENEXECUTIONSTATUS
ak17p
RISCwatch
ACE FLASH
mictor layout
RISCwatch Trace
connector 20 pin
FF672
Virtex-II Prototype platform
XC3090
XC4005
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BGY67A
Abstract: DIN45004B
Text: BGY67A 200 MHz, 24 dB gain reverse amplifier Rev. 04 — 14 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
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BGY67A
OT115J
MSC895
BGY67A
DIN45004B
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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983-495 thermax
Abstract: bj3450 PL75C-201 m27500-22rc2s06 PL155AC-201 305-0042-1 EPD22030F M27500-26RC2S06 PL75MC ASNE 0094
Text: PRODUCT CATALOG Military, Space and Testing Equipment Emerson Network Power Connectivity Solutions has a wide range of cable assemblies and connectors suited for RF, Microwave and Fiber Optic signal transmission. Connectivity Solutions is a vertically integrated supplier of custom, fixed
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TEI-T24,
983-495 thermax
bj3450
PL75C-201
m27500-22rc2s06
PL155AC-201
305-0042-1
EPD22030F
M27500-26RC2S06
PL75MC
ASNE 0094
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BGD812
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier
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M3D252
BGD812
OT115J
613518/04/pp10
BGD812
DIN45004B
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BGD802
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES
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M3D252
BGD802
OT115J
613518/07/pp10
BGD802
DIN45004B
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CGD1044H
Abstract: No abstract text available
Text: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
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CGD1044H
OT115J
CGD1044H
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BGD814
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier
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M3D252
BGD814
OT115J
613518/04/pp10
BGD814
DIN45004B
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BGR269
Abstract: DIN45004B
Text: BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
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BGR269
OT115J
BGR269
DIN45004B
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Untitled
Abstract: No abstract text available
Text: Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; optical input with connector; 8 gold-plated in-line leads SOT115V D N2 E S2 Z N1 N3 p M M1 M3 M2 A2 1 2 3 4 5
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OT115V
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Untitled
Abstract: No abstract text available
Text: Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads SOT115D D E Z A2 1 2 3 4 5 6 7 8 9 A L F S W c e d U2 B e1 Q b q2 w M y M B q1 x M B
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OT115D
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Untitled
Abstract: No abstract text available
Text: Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 8 gold-plated in-line leads SOT115AE D E Z p A2 1 2 3 4 5 7 8 9 A L F S W c b e d w M e1 U2 Q q2 B y M B q1 y M B
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OT115AE
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES
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M3D252
BGD812
OT115J
613518/04/pp10
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Untitled
Abstract: No abstract text available
Text: DAT dbook, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J
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M3D252
BGY887
OT115J
MSA319
613518/05/pp10
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGY883 860 MHz, 15 dB gain push-pull amplifier Product specification Supersedes data of 1997 Apr 14 2001 Oct 31 NXP Semiconductors Product specification 860 MHz, 15 dB gain push-pull amplifier FEATURES BGY883
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M3D252
BGY883
OT115J
MSA319
R77/04/pp7
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U3405
Abstract: No abstract text available
Text: w .c ong COM Express Basic Module ate c.co m conga-BE57 Maximum Computing Performance Formfactor COM Express Basic, 95 x 125 mm , Type II Connector Layout Processor Intel® Core™ i7-610E, 2.53 GHz (32 nm process, 4MB cache, 1066 MHz, TDP 25 W, BGA package)
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conga-BE57
i7-610E,
i7-620LE,
P4505
U3405
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGY588N 550 MHz, 34.5 dB gain push-pull amplifier Product specification Supersedes data of 2000 Feb 14 2001 Oct 22 NXP Semiconductors Product specification 550 MHz, 34.5 dB gain push-pull amplifier FEATURES
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M3D252
BGY588N
OT115J
613518/04/pp7
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72125
Abstract: No abstract text available
Text: BGO827; BGO827/FC0; BGO827/SC0 870 MHz optical receivers Rev. 5 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC
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BGO827;
BGO827/FC0;
BGO827/SC0
OT115
BGO827
72125
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14433
Abstract: philips catv line amplifier BGE788 DIN45004B
Text: BGE788 750 MHz, 34 dB gain push-pull amplifier Rev. 04 — 30 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V DC . The module consists of two cascaded stages both in cascode
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BGE788
OT115J
MSC895
14433
philips catv line amplifier
BGE788
DIN45004B
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CGY1047
Abstract: No abstract text available
Text: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGY1047
OT115J
2002/95/EC,
CGY1047
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4425 B
Abstract: No abstract text available
Text: PDF: 2004 Feb 05 Philips Semiconductors Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; optical input; 8 gold-plated in-line leads N D N1 N2 E S2 SOT115T Z p
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OT115T
4425 B
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SOT-115J
Abstract: SOT115J
Text: PDF: 2004 Feb 05 Philips Semiconductors Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S
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OT115J
SOT-115J
SOT115J
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Untitled
Abstract: No abstract text available
Text: 1 2 3 5 7 8 9 BGE787B 750 MHz, 29 dB gain push-pull amplifier Rev. 4 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V DC in a SOT115J package. The module consists of two cascaded stages both in cascode
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BGE787B
OT115J
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Untitled
Abstract: No abstract text available
Text: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • ■ Ultra Low Power Operation Architectural Flexibility - V cc = 5 Volts ±10% - Icc = 10 |iA typical at standby - Icc = 2 mA (typical) at 1 MHz - CMOS Electrically Erasable Technology
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OCR Scan
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18CV8Z-25
20-Pin
0001fl3fl
407D7
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