VSMG2720
Abstract: VSMG2720-GS08 VSMG2720-GS18
Text: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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VSMG2720
VSMG2720
11-Mar-11
VSMG2720-GS08
VSMG2720-GS18
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VSMG2700
Abstract: VSMG2700-GS08 VSMG2700-GS18
Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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VSMG2700
VSMG2700
11-Mar-11
VSMG2700-GS08
VSMG2700-GS18
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VSMF3710-GS18
Abstract: VSMF3710 VSMF3710-GS08
Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability
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VSMF3710
VSMF3710
18-Jul-08
VSMF3710-GS18
VSMF3710-GS08
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stud 180RKI
Abstract: 180A4000 180RKI 181RKI IGD 001
Text: 180RKI.PbF, 181RKI.PbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
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180RKI.
181RKI.
O-209AB
2002/95/EC
18-Jul-08
stud 180RKI
180A4000
180RKI
181RKI
IGD 001
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BPW34 application note
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4720
VSMF4720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BPW34 application note
APPLICATION NOTE BpW34
lux meter calibration
RB94
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VSMG2720
Abstract: VSMG2720-GS08 VSMG2720-GS18
Text: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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VSMG2720
VSMG2720
18-Jul-08
VSMG2720-GS08
VSMG2720-GS18
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Untitled
Abstract: No abstract text available
Text: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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Original
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PDF
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VSMG2720
VSMG2720
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability • High radiant power
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VSMF9700X01
J-STD-020
VSMF9700X01
AEC-Q101
2002/hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: GPP20A thru GPP20M Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability • Meets environmental standard MIL-S-19500
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GPP20A
GPP20M
MIL-S-19500
22-B106
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
DO-204AC,
11-Mar-11
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VSMF4720
Abstract: VSMF4720-GS08 VSMF4720-GS18
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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Original
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PDF
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VSMF4720
VSMF4720
11-Mar-11
VSMF4720-GS08
VSMF4720-GS18
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Untitled
Abstract: No abstract text available
Text: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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Original
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PDF
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VSMG2720
VSMG2720
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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PDF
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VSMF4710
VSMF4710
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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Original
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PDF
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VSMG2720
VSMG2720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 180RKI.PbF, 181RKI.PbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
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Original
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PDF
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180RKI.
181RKI.
O-209AB
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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Original
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PDF
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VSMF4720
VSMF4720
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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Original
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PDF
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VSMF4710
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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Original
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PDF
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VSMF4720
VSMF4720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability
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Original
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PDF
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VSMF3710
VSMF3710
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: 180RKI.PbF, 181RKI.PbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
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Original
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PDF
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180RKI.
181RKI.
O-209AB
2002/95/EC
180RKI
181RKI
11-Mar-11
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VSMG2700
Abstract: VSMG2700-GS08 VSMG2700-GS18 IR photodetectors
Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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Original
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PDF
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VSMG2700
VSMG2700
18-Jul-08
VSMG2700-GS08
VSMG2700-GS18
IR photodetectors
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Untitled
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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Original
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PDF
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability
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Original
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PDF
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VSMF3710
VSMF3710
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: 180RKI.PbF, 181RKI.PbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
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Original
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PDF
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180RKI.
181RKI.
O-209AB
2002/95/EC
180RKI
181RKI
2011/65/EU
2002/95/EC.
2002/95/EC
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