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    BUK9006-55A

    Abstract: 03nn86 11571
    Text: BUK9006-55A TrenchMOS logic level FET Rev. 01 — 1 August 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive GPA TrenchMOS™ technology.


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    BUK9006-55A BUK9006-55A 03nn86 11571 PDF