linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A
Abstract: st1s
Text: ST1S03 1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6 AND SO-8 • ■ ■ ■ ■ ■ ■ ■ ■ STEP-DOWN CURRENT MODE PWM 1.5MHz DC-DC CONVERTER 2% DC OUTPUT VOLTAGE TOLERANCE INTERNAL SOFT START FOR START-UP CURRENT LIMITIATION AND POWER ON
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ST1S03
350mV
750mA
ST1S03
linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A
st1s
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F8NK85Z
Abstract: P8NK85Z F8NK85 STP8NK85Z F8NK8 p8nk
Text: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω <1.4 Ω 6.7A 6.7A 150 W
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STP8NK85Z
STF8NK85Z
O-220/TO-220FP
O-220
O-220FP
F8NK85Z
P8NK85Z
F8NK85
F8NK8
p8nk
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D16NF06L
Abstract: JESD97 STD16NF06L STD16NF06L-1 STD16NF06LT4
Text: STD16NF06L STD16NF06L-1 N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD16NF06L-1 60V <0.070Ω 24A STD16NF06L 60V <0.070Ω 24A • Logic level device ■ Low threshold drive 3 3 2 1 iPAK 1 DPAK
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STD16NF06L
STD16NF06L-1
D16NF06L
JESD97
STD16NF06L
STD16NF06L-1
STD16NF06LT4
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la 7913
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
la 7913
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
00005H
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Q002
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
Q002
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
13-May-2003
tbhk
M58BW016DB7
8835h
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
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k1 522
Abstract: VFBGA EIA-481-B 07JAN200 pd0002
Text: PD0002 Packing information Chip scale packages for memory products tape and reel shipping media Introduction Surface mounting packages can be supplied with tape and reel packing. The reels are standard 330 mm 13” diameter, 180 mm (7”) for very small packages, and
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PD0002
k1 522
VFBGA
EIA-481-B
07JAN200
pd0002
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JESD97
Abstract: ST1S03 ST1S03PU ST1S03PUR
Text: ST1S03 1.5 A, 1.5 MHz adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DC-DC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for START-UP current limitation and power on delay of 50-100 µs ■
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ST1S03
ST1S03
JESD97
ST1S03PU
ST1S03PUR
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M58BW016
Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
PQFP80
M58BW016
Q002
M58BW016DT
M58BW016FB
PQFP80
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)
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Original
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PDF
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
PQFP80
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)
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Original
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PDF
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
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Untitled
Abstract: No abstract text available
Text: ST1S03 1.5A, 1.5 MHz adjustable, step-down switching regulator in DFN6 Features • Step-down current mode PWM 1.5MHz DC-DC converter ■ 2% DC output voltage tolerance ■ Internal soft start for START-UP current limitation and power on delay of 50-100µs
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Original
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PDF
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ST1S03
350mV
750mA
ST1S03PUR
ST1S03
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - BASE REVISIONS DIST HM ALL RIGHTS RESERVED. 1 #6-32 X 22.35[.88] SLOTTED/ PHILLIPS OVAL HEAD SCREW QUANTITY 4 00 P LTR DESCRIPTION DATE DWN APVD D REV ECO-10-011451
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ECO-11-012256
15JUN2011
01JUN2010
ECO-10-011451
ECO-14-002243
20FEB2014
03MAR2005
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F8NK85Z
Abstract: P8NK85Z sep 67a F8NK85
Text: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω <1.4 Ω 6.7A 6.7A
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STP8NK85Z
STF8NK85Z
O-220/TO-220FP
O-220
O-220FP
F8NK85Z
P8NK85Z
sep 67a
F8NK85
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M58BW016
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)
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Original
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PDF
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
M58BW016
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linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A
Abstract: SISTEM CONTROL SMD Step-Down Voltage Regulator ST1S03PM Thermal Shut Down Functioned MOSFET ST1S03 ST1S03RPM DFN 3x3 dfn6
Text: ST1S03 1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6 • ■ ■ ■ ■ ■ ■ ■ ■ STEP-DOWN CURRENT MODE PWM 1.5MHz DC-DC CONVERTER 2% DC OUTPUT VOLTAGE TOLERANCE INTERNAL SOFT START FOR START-UP CURRENT LIMITIATION AND POWER ON
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Original
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ST1S03
350mV
750mA
ST1S03
linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A
SISTEM CONTROL
SMD Step-Down Voltage Regulator
ST1S03PM
Thermal Shut Down Functioned MOSFET
ST1S03RPM
DFN 3x3
dfn6
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F8NK85Z
Abstract: F8NK85
Text: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω
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STP8NK85Z
STF8NK85Z
O-220/TO-220FP
O-220
O-220FP
F8NK85Z
F8NK85
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Q002
Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
PQFP80
Q002
M58BW016DT
M58BW016FB
PQFP80
56MHZ
M58BW016
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA MECHANICAL: DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 — 03M A R 2005 LV DF/CG - S H I E L D - .010" T H I C K , C 2 6 8 0 0 B R A S S P R E P L A T E D W I T H 3 0 j i INCH MI N S E M I - B R I G H T
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31MAR2000
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proner comatel
Abstract: PRONER comatel SAC300
Text: 2 6 THIS M DRAWING IS U N P U 8 1 1S H E 0. BY C O PY RI G HT 2004 RELEASED TYCO ELECTRON I C S CORPORATION. AL L toc 2004 FOR P U 0 L ICA TION DIST REV I S IONS 00 R [ GHTS R E S E R V E D . LTR O D a t e u r Annue I - M e n s u e FIRST M O N T A GE DE C O N T R O L E
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03FE82004
I6NOV2004
03MAR2005
ERAO-0084-05
3IMAR20
00dSH£
proner comatel
PRONER
comatel
SAC300
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mag45
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 REV PER EC 0 S 1 3 - 0 6 4 4 - 0 4 DATE DWN APVD 03M A R 2005 LV DF MAX
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C26800
03MAR2005
03MAR2005
31MAR2000
mag45
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. .850 MAX MECHANICAL: 2 i O ,625 00 .645 Ö LT ) Í3 § D \ .105 .545 600 MAX pn 30 RJ —1 R J- 8 u VJ 10 .425 C 0.O 62(2X) .660
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03MAR2005
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MAGNETIC s
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT FOR PUBLICATION RIGHTS 6 5 - RESERVED. BY TYCO ELECTRONICS CORPORATION. MECHANICAL: .625 D .080 - C .130 0.O62 2X 0.126(2X) + .015 .660 - . 0 0 0 i ELECTRICAL: 7G02 SERIES MAGNETIC CIRCUIT
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MAG45
MAGNETIC s
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