ST M29W800DT
Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks
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M29W800DT
M29W800DB
512Kb
64-and
ST M29W800DT
M29W800D
M29W800DB
M29W800DT
TFBGA48
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M29F016D
Abstract: No abstract text available
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F016D
64Kbyte
TSOP40
M29F016D
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M29W017D
Abstract: TFBGA48
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29W017D
TSOP40
TFBGA48
M29W017D
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M29F080D 8 Mbit 1Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F080D
64Kbyte
TSOP40
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Untitled
Abstract: No abstract text available
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface
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M41ST84W
10ths/100ths
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TL1300H
Abstract: GR-1089-CORE TL0640H TL0720H TL0900H TL1100H TL3500H TL1500H
Text: LITE-ON SEMICONDUCTOR TL0640H thru TL3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP DO-201AD FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400
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TL0640H
TL3500H
DO-201AD
10/1000us
8/20us
03-Dec-2001,
KDWE01
TL1300H
GR-1089-CORE
TL0720H
TL0900H
TL1100H
TL3500H
TL1500H
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GR-1089-CORE
Abstract: TC0640H TC0720H TC0900H TC1100H TC1300H TC3500H
Text: LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @
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TC0640H
TC3500H
10/1000us
8/20us
03-Dec-2001,
KSWC02
GR-1089-CORE
TC0720H
TC0900H
TC1100H
TC1300H
TC3500H
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M41ST85W
Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
Text: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)
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M41ST85W
400kHz
SOH28
500nA
SOX28
10ths/100ths
M41ST85W
M4T28-BR12SH1
M4T32-BR12SH1
M4T32-BR12SH6
SOH28
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1510M
Abstract: DF15005M DF1510M
Text: LITE-ON SEMICONDUCTOR DF15005M thru DF1510M REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.
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DF15005M
DF1510M
E95060
300us
03-Dec-2001,
KBDC02
1510M
DF1510M
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DF01S
Abstract: DF02S DF04S DF06S DF08S DF10S
Text: LITE-ON SEMICONDUCTOR DF005S thru DF10S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF-S Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop high current capability.
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DF005S
DF10S
E95060
300us
03-Dec-2001,
KBDA01
DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
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KDS 32kHZ crystal
Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface
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M41ST84W
10ths/100ths
KDS 32kHZ crystal
quartz crystal kds 70
AN1572
M41ST84W
AN1012
AI005
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GR-1089-CORE
Abstract: TA0640M TA0720M TA0900M TA1100M TA1300M TA3500M
Text: LITE-ON SEMICONDUCTOR TA0640M thru TA3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A
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TA0640M
TA3500M
10/1000us
8/20us
03-Dec-2001,
KSWA03
GR-1089-CORE
TA0720M
TA0900M
TA1100M
TA1300M
TA3500M
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TECHNICAL SPECIFICATION DATA SHEET GOLD 705
Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
Text: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■
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PDF
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M41ST85W
SOH28
TECHNICAL SPECIFICATION DATA SHEET GOLD 705
M41ST85W
M4T28-BR12SH1
M4T32-BR12SH1
M4T32-BR12SH6
SOH28
AN934
24JAN
NVRAM
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JESD97
Abstract: M29F016D A12A20
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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M29F016D
64Kbyte
TSOP40
JESD97
M29F016D
A12A20
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JESD97
Abstract: M29F080D
Text: M29F080D 8 Mbit 1Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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Original
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PDF
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M29F080D
64Kbyte
TSOP40
JESD97
M29F080D
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M29W800D
Abstract: M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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Original
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PDF
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M29W800DT
M29W800DB
512Kb
TSOP48
M29W800D
M29W800DB
M29W800DT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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Original
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PDF
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M29W800DT
M29W800DB
512Kb
TSOP48
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Part Number 855938 1950 MHz SAW Filter Features • • • • • • • • For 3G applications Usable bandwidth 60 MHz Low loss No impedance matching required for operation at 50 Ω Single-ended operation Ceramic Surface Mount Package SMP
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03-Dec-2001
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GR-1089-CORE
Abstract: TA0640L TA0720L TA0900L TA1100L TA1300L TA3500L
Text: LITE-ON SEMICONDUCTOR TA0640L thru TA3500L Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 30 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @ 10/1000us or 150A
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Original
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PDF
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TA0640L
TA3500L
10/1000us
8/20us
03-Dec-2001,
KSWA02
GR-1089-CORE
TA0720L
TA0900L
TA1100L
TA1300L
TA3500L
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M29W800D
Abstract: M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME
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Original
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PDF
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M29W800DT
M29W800DB
512Kb
M29W800D
M29W800DB
M29W800DT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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Original
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PDF
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M29W017D
TSOP40
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Untitled
Abstract: No abstract text available
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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Original
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PDF
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M29W800DT
M29W800DB
512Kb
TSOP48
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Untitled
Abstract: No abstract text available
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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Original
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PDF
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M29F016D
64Kbyte
TSOP40
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Untitled
Abstract: No abstract text available
Text: M29W800DT M29W800DB 8-Mbit 1 Mbit x 8 or 512 Kbits x 16, boot block 3 V supply flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 s per byte/word typical
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Original
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PDF
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M29W800DT
M29W800DB
64-bit
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