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    03APR2008 Search Results

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    ENE3127B

    Abstract: NDK America ndk TCXO STCD1020 STCD1020RDG6E STCD1030 STCD1040 STCD1040RDM6F TDFN12
    Text: STCD1020, STCD1030, STCD1040 Multichannel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source


    Original     		PDF STCD1020, STCD1030, STCD1040 STCD1020 STCD1030 10-lead STCD1040 12-lead ENE3127B NDK America ndk TCXO STCD1020RDG6E STCD1040RDM6F TDFN12

    ene31

    Abstract: No abstract text available
    Text: STCD1020, STCD1030, STCD1040 Multichannel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source


    Original     		PDF STCD1020, STCD1030, STCD1040 STCD1020 STCD1030 10-lead STCD1040 12-lead ene31

    NAND02GW3B2D

    Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		PDF NAND02G-B2D 2112-byte/1056-word TSOP48 VFBGA63 VFBGA63 NAND02GW3B2D NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI NAND02GW3B2D-N

    Untitled

    Abstract: No abstract text available
    Text: LD29300xx 3 A, very low drop voltage regulators Features • Very low dropout voltage Typ. 0.4 at 3 A ■ Guaranteed output current up to 3 A ■ Fixed voltage with ± 1 % tolerance at 25 °C ■ Internal current and thermal limit ■ Logic controlled electronic shutdown available


    Original     		PDF LD29300xx O-220 LD29300xx

    LD29300

    Abstract: JESD97 LD29300XX LD29300XX15 LD29300XX18 LD29300XX25 LD29300XX33 LD29300XX50 LD29300XX80 LD29300D2M50R
    Text: LD29300xx 3 A, very low drop voltage regulators Features • Very low dropout voltage Typ. 0.4 at 3 A ■ Guaranteed output current up to 3 A ■ Fixed voltage with ± 1 % tolerance at 25 °C ■ Internal current and thermal limit ■ Logic controlled electronic shutdown available


    Original     		PDF LD29300xx O-220 LD29300xx LD29300 JESD97 LD29300XX15 LD29300XX18 LD29300XX25 LD29300XX33 LD29300XX50 LD29300XX80 LD29300D2M50R

    ENE3127B

    Abstract: STCD1040RDM6F TDFN12 TDFN-12L NDK America ndk 10MHz STCD1020 STCD1020RDG6E STCD1030 STCD1040
    Text: STCD1020, STCD1030, STCD1040 Multi-channel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source


    Original     		PDF STCD1020, STCD1030, STCD1040 STCD1020 STCD1030 10-lead STCD1040 12-lead ENE3127B STCD1040RDM6F TDFN12 TDFN-12L NDK America ndk 10MHz STCD1020RDG6E

    PIN DIAGRAM OF ZIGBEE

    Abstract: BLOCK DIAGRAM OF ZIGBEE pcb layout of zigbee ZigBee P-DT2112C UM0282 UM0456 R0805 10K 2X10-Pin BLOCK DIAGRAM OF ZIGBEE module
    Text: UM0456 User manual STEVAL-IFS010V1 STR9 ZigBee extension for SN260 network processor Introduction This user manual describes the STEVAL-IFS010V1 STR9 ZigBee® extension hardware. As well as the block diagram and schematics of the extension, a bill of materials and assembly


    Original     		PDF UM0456 STEVAL-IFS010V1 SN260 STEVAL-IFS010V1 16-bit PIN DIAGRAM OF ZIGBEE BLOCK DIAGRAM OF ZIGBEE pcb layout of zigbee ZigBee P-DT2112C UM0282 UM0456 R0805 10K 2X10-Pin BLOCK DIAGRAM OF ZIGBEE module

    JN-RM-2035

    Abstract: JN-UG-3042 JN5139-EK020 JN-AN-1061 JN-UG-3041 JN5139 DR1080 SERVICE MANUAL dvd Radio JN-UG-3040 JN-SW-4030
    Text: JN5139-EK020 802.15.4/JenNet Starter Kit User Guide JN-UG-3040 Revision 1.1 3 April 2008 Jennic JN5139-EK020 802.15.4/JenNet Starter Kit User Guide 2 Jennic 2008 JN-UG-3040 v1.1 Jennic JN5139-EK020 802.15.4/JenNet Starter Kit User Guide Contents About this Manual


    Original     		PDF JN5139-EK020 JN-UG-3040 JN-UG-3040 JN-RM-2035 JN-UG-3042 JN-AN-1061 JN-UG-3041 JN5139 DR1080 SERVICE MANUAL dvd Radio JN-SW-4030

    W618

    Abstract: ld29300p2m33r
    Text: LD29300XX, LD29300XX18, LD29300XX33 3 A, very low drop voltage regulators Datasheet − production data Features • Very low dropout voltage typ. 0.4 at 3 A ■ Guaranteed output current up to 3 A ■ Fixed voltage with ± 1% tolerance at 25 °C ■ Internal current and thermal limit


    Original     		PDF LD29300XX, LD29300XX18, LD29300XX33 LD29300xx W618 ld29300p2m33r

    Untitled

    Abstract: No abstract text available
    Text: LD29300 3 A, very low drop voltage regulators Datasheet - production data Table 1. Device summary Order codes Output voltages LD29300P2M33R 3.3 V LD29300P2MTR ADJ P²PAK/A Features • Very low dropout voltage typ. 0.4 at 3 A • Guaranteed output current up to 3 A


    Original     		PDF LD29300 LD29300P2M33R LD29300P2MTR LD29300 DocID9248

    JESD97

    Abstract: STP180NS04ZC ISD120
    Text: STP180NS04ZC N-channel clamped 3.5 mΩ - 120 A TO-220 fully protected SAFeFET Power MOSFET Features Type VDSS RDS on max ID STP180NS04ZC Clamped < 4.2 mΩ 120 A • Low capacitance and gate charge ■ 100% avalanche tested ■ 3 1 175°C maximum junction temperature


    Original     		PDF STP180NS04ZC O-220 JESD97 STP180NS04ZC ISD120

    NAND02GR3BAD

    Abstract: BIT3102
    Text: NAND02G-BxD 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		PDF NAND02G-BxD 2112-byte/1056-word VFBGA63 TSOP48 NAND02GR3BAD BIT3102

    NAND02GR3B2D

    Abstract: NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		PDF NAND02G-B2D 2112-byte/1056-word TSOP48 NAND02GR3B2D NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B

    270N4F3

    Abstract: No abstract text available
    Text: STV270N4F3 N-channel 40 V - 1.25 mΩ - 270 A - PowerSO-10 STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on ID (1) STV270N4F3 40 V < 1.5 mΩ 270 A 10 1. Current limited by package 1 • Conduction losses reduced ■ Low profile, very low parasitic inductance


    Original     		PDF STV270N4F3 PowerSO-10 STV270N4F3 PowerSO-10 270N4F3

    NAND02GW3B2D

    Abstract: ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		PDF NAND02G-B2D 2112-byte/1056-word TSOP48 NAND02GW3B2D ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand

    STV270N4F3

    Abstract: 270N4F3 JESD97
    Text: STV270N4F3 N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET Power MOSFET Features Type VDSS RDS on max ID (1) STV270N4F3 40 V < 1.5 mΩ 270 A 10 1. Current limited by package 1 PowerSO-10 • Conduction losses reduced ■ Low profile, very low parasitic inductance


    Original     		PDF STV270N4F3 PowerSO-10 STV270N4F3 270N4F3 JESD97

    NAND02GR3B2D

    Abstract: No abstract text available
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		PDF NAND02G-B2D 2112-byte/1056-word NAND02GR3B2D

    STV270N4F3

    Abstract: 270N4F3
    Text: STV270N4F3 N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET III Power MOSFET Features Type VDSS RDS on max ID (1) STV270N4F3 40 V < 1.5 mΩ 270 A 10 1. Current limited by package 1 PowerSO-10 • Conduction losses reduced ■ Low profile, very low parasitic inductance


    Original     		PDF STV270N4F3 PowerSO-10 270N4F3 STV270N4F3

    PIN DIAGRAM OF ZIGBEE

    Abstract: BLOCK DIAGRAM OF ZIGBEE R0805 10K pcb layout of zigbee 20 pin diagram of zigbee LD24 LD25 LIS302DL SN260 SPZB260
    Text: UM0456 User manual STEVAL-IFS010V1 STR9 ZigBee demonstration board for SN260 network processor Introduction This user manual describes the STEVAL-IFS010V1 STR9 ZigBee® demonstration board hardware. As well as the block diagram and schematics of the demonstration board, a bill of


    Original     		PDF UM0456 STEVAL-IFS010V1 SN260 STEVAL-IFS010V1 16-bit SN260n PIN DIAGRAM OF ZIGBEE BLOCK DIAGRAM OF ZIGBEE R0805 10K pcb layout of zigbee 20 pin diagram of zigbee LD24 LD25 LIS302DL SPZB260

    270N4F3

    Abstract: STV270N4F3
    Text: STV270N4F3 N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET III Power MOSFET Preliminary data Features Type VDSS RDS on max ID (1) STV270N4F3 40 V < 1.5 mΩ 270 A 10 1. Current limited by package 1 PowerSO-10 • Conduction losses reduced ■ Low profile, very low parasitic inductance


    Original     		PDF STV270N4F3 PowerSO-10 270N4F3 STV270N4F3

    ENE3127B

    Abstract: NDK America STCD1040RDM6F STCD1020 STCD1020RDG6E STCD1030 STCD1040 TDFN12 TDFN-10 iact
    Text: STCD1020, STCD1030, STCD1040 Multichannel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source


    Original     		PDF STCD1020, STCD1030, STCD1040 STCD1020 STCD1030 10-lead STCD1040 12-lead ENE3127B NDK America STCD1040RDM6F STCD1020RDG6E TDFN12 TDFN-10 iact

    Untitled

    Abstract: No abstract text available
    Text: T H I S D R A W I NG I S U N P U B L I S H E D . R E L E A S E D RO R P U B L I C A T I ON BY T Y C O E L E C T R O N I C S C O R P O R A T I O N C O P Y R I GHT 2006 LOC ALL R IGHTS RESERVED . R E V I S I ONS D I ST D E S C R I P T I ON B1 A2 PN3-2; 5-2;


    OCR Scan     		PDF Eg00-1426-03 ECR-09-005436 11MAR2010 03APR2008 IMAR2000

    MKT-ZA03D

    Abstract: B 3 ss 92 jfet 305 to92 92 94
    Text: R E V IS IO N S TUB MWMNO B THE PROPERTY CF BMRCHLD SEMICONDUCTOR CORPORATION. NO USE NAME/SITE WTH SUCH PROPOSALS UNLESS THE CONSENT OF SAC FWCHLD S flN P M P V W POWTKJN HAS PREVIOUSLY BEEN OBTAINED. NO RWT OF THB ORMINO SHAH. BE • COPED OR DUPLICATED OR ITS CONTENTS DBCLOSED- THE INFORMATION CONTNNED


    OCR Scan     		PDF July-14-2008 5M-1994. ZA03DREV3. 03APR2008 MKT-ZA03D B 3 ss 92 jfet 305 to92 92 94