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Catalog Datasheet	MFG & Type	PDF	Document Tags
PHD22NQ20T Abstract: 12882 Text: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features	Original	PDF	PHD22NQ20T M3D300 OT428 PHD22NQ20T 12882
Untitled Abstract: No abstract text available Text: 7 8_ THIS DRAWING AND DESIGN HEREON CON S T IT U T E S A PROPRIETARY DESIGN OF PACKARD EL E C T R IC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCA LE PREFERRED. 4 5 ° ACCEPTABLE	OCR Scan	PDF	14AP87 27MY87 03AP91 12JL91 31JL91 25SE91 18MY94 26JL94 06MR95

Catalog Datasheet

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PHD22NQ20T

Abstract: 12882
Text: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

Original

PDF

PHD22NQ20T M3D300 OT428 PHD22NQ20T 12882

Untitled

Abstract: No abstract text available
Text: 7 8_ THIS DRAWING AND DESIGN HEREON CON S T IT U T E S A PROPRIETARY DESIGN OF PACKARD EL E C T R IC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCA LE PREFERRED. 4 5 ° ACCEPTABLE

OCR Scan

PDF

14AP87 27MY87 03AP91 12JL91 31JL91 25SE91 18MY94 26JL94 06MR95