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    PHD22NQ20T

    Abstract: 12882
    Text: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PHD22NQ20T M3D300 OT428 PHD22NQ20T 12882

    Untitled

    Abstract: No abstract text available
    Text: 24 23 21 22 20 19 17 18 16 15 14 12 13 11 10 7 8 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. (2X3) 2X 1.2 ±0.3 M CD TOTAL NO OF INSPECTIONS REQUIRED


    OCR Scan     		PDF 25MY04 100C05 03AP87 14AP87 28AP87 29AP87