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    Microchip Technology Inc PL123-02NGI-R

    IC CLK BUFFER 1:2 200MHZ 6DFN
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    DigiKey PL123-02NGI-R Digi-Reel 2,379 1
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    PL123-02NGI-R Cut Tape 2,379 1
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    Mouser Electronics PL123-02NGI-R 20,934
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    Newark PL123-02NGI-R Reel 3,000
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    Microchip Technology Inc PL123-02NGI-R Reel 6,000 10 Weeks
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    NAC PL123-02NGI-R 3,000
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    Avnet Silica PL123-02NGI-R 12 Weeks 3,000
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    TAIYO YUDEN LSMGA452525T102NG

    FERRITE BEAD 1K OHM 1810 1LN
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    DigiKey LSMGA452525T102NG Digi-Reel 1,032 1
    • 1 $0.72
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    LSMGA452525T102NG Cut Tape 1,032 1
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    LSMGA452525T102NG Reel 1,000 1,000
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    Mouser Electronics LSMGA452525T102NG 248
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    TTI LSMGA452525T102NG Reel 1,000
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    TAIYO YUDEN LCMGA322525T202NG

    FERRITE BEAD 2K OHM 1210 1LN
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    DigiKey LCMGA322525T202NG Cut Tape 1,008 1
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    LCMGA322525T202NG Digi-Reel 1,008 1
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    LCMGA322525T202NG Reel 1,000 1,000
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    TTI LCMGA322525T202NG Reel 1,000
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    Avnet Abacus LCMGA322525T202NG 17 Weeks 1,000
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    TAIYO YUDEN LSMGA322525T102NG

    FERRITE BEAD 1 KOHM 1210 1LN
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    DigiKey LSMGA322525T102NG Reel 1,000 1,000
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    Mouser Electronics LSMGA322525T102NG 2,522
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    • 10 $0.305
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    TAIYO YUDEN LCMGA452525T102NG

    FERRITE BEAD 1 KOHM 1810 1LN
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    DigiKey LCMGA452525T102NG Reel 1,000 1,000
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    LCMGA452525T102NG Digi-Reel 1,000 1
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    02NG Datasheets Context Search

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    5802N

    Abstract: 5802NG 02NG NTD5802NT4G
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		NTD5802N NTD5802N/D 5802N 5802NG 02NG NTD5802NT4G PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9610-100B PDF

    NVD5802NT4G

    Abstract: 5802n 5802NG Flash driver source code NTD5802N
    Text: NTD5802N, NVD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C


    Original     		NTD5802N, NVD5802N NTD5802N/D NVD5802NT4G 5802n 5802NG Flash driver source code NTD5802N PDF

    5802NG

    Abstract: No abstract text available
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		NTD5802N NTD5802N/D 5802NG PDF

    BUK95

    Abstract: BUK9610-100B
    Text: D2 PA K BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9610-100B BUK95 BUK9610-100B PDF

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9510-100B N-channel TrenchMOS logic level FET Rev. 3 — 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9510-100B PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD5802N, NVD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C


    Original     		NTD5802N, NVD5802N NTD5802N/D PDF

    5802N

    Abstract: NTD5802NT4G 5802NG
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		NTD5802N NTD5802N/D 5802N NTD5802NT4G 5802NG PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD5802N, NVD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C 100% Avalanche Tested


    Original     		NTD5802N, NVD5802N NTD5802N/D PDF

    NTD5802NT4G

    Abstract: 5802N
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		NTD5802N NTD5802N/D NTD5802NT4G 5802N PDF

    BUK7510-100B

    Abstract: 7610-100B
    Text: BUK7510-100B N-channel TrenchMOS standard level FET Rev. 03 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7510-100B BUK7510-100B 7610-100B PDF

    BUK7610-100B

    Abstract: No abstract text available
    Text: BUK7610-100B N-channel TrenchMOS standard level FET Rev. 03 — 12 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7610-100B BUK7610-100B PDF

    BUK95

    Abstract: BUK9510-100B
    Text: TO -22 0A B BUK9510-100B N-channel TrenchMOS logic level FET Rev. 3 — 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9510-100B BUK95 BUK9510-100B PDF