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    02NG Search Results

    02NG Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RQJ0302NGDQA#H1 Renesas Electronics Corporation Pch Single Power Mosfet -30V -2.2A 173Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
    RQJ0302NGDQA#H6 Renesas Electronics Corporation Pch Single Power Mosfet -30V -2.2A 173Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
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    02NG Price and Stock

    BOYD Laconia MAX02NG

    MAX CLIP TO-220/MAX220 LOW-FORCE
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    DigiKey MAX02NG Bulk 45,263 1
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    Mouser Electronics MAX02NG 17,185
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    IBS Electronics MAX02NG 5,000 5,000
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    New Advantage Corporation MAX02NG 5,000 1
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    • 10000 $0.224
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    Rochester Electronics LLC MC74AC02NG

    IC GATE NOR 4CH 2-INP 14DIP
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    DigiKey MC74AC02NG Tube 9,425 1,158
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    TAIYO YUDEN LSMGA322525T202NG

    FERRITE BEAD 2K OHM 1210 1LN
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    DigiKey LSMGA322525T202NG Reel 5,000 1,000
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    LSMGA322525T202NG Cut Tape 1,119 1
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    Mouser Electronics LSMGA322525T202NG 564
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    TTI LSMGA322525T202NG Reel 1,000
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    New Advantage Corporation LSMGA322525T202NG 62,000 1
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    Microchip Technology Inc PL123-02NGI-R

    IC CLK BUFFER 1:2 200MHZ 6DFN
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    DigiKey PL123-02NGI-R Cut Tape 2,513 1
    • 1 $3.29
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    Mouser Electronics PL123-02NGI-R 21,096
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    Newark PL123-02NGI-R Reel 3,000
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    Microchip Technology Inc PL123-02NGI-R 12,000
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    NAC PL123-02NGI-R 6,000 1
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    EBV Elektronik PL123-02NGI-R 10 Weeks 3,000
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    TAIYO YUDEN LSMGA452525T102NG

    FERRITE BEAD 1K OHM 1810 1LN
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    DigiKey LSMGA452525T102NG Reel 2,000 1,000
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    LSMGA452525T102NG Cut Tape 86 1
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    Mouser Electronics LSMGA452525T102NG 960
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    TTI LSMGA452525T102NG Reel 1,000 1,000
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    Find more 02NG price and stock on Findchips.com

    02NG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5802N

    Abstract: 5802NG 02NG NTD5802NT4G
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		PDF NTD5802N NTD5802N/D 5802N 5802NG 02NG NTD5802NT4G

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9610-100B

    NVD5802NT4G

    Abstract: 5802n 5802NG Flash driver source code NTD5802N
    Text: NTD5802N, NVD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C


    Original     		PDF NTD5802N, NVD5802N NTD5802N/D NVD5802NT4G 5802n 5802NG Flash driver source code NTD5802N

    5802NG

    Abstract: No abstract text available
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		PDF NTD5802N NTD5802N/D 5802NG

    BUK95

    Abstract: BUK9610-100B
    Text: D2 PA K BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9610-100B BUK95 BUK9610-100B

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9510-100B N-channel TrenchMOS logic level FET Rev. 3 — 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9510-100B

    Untitled

    Abstract: No abstract text available
    Text: NTD5802N, NVD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C


    Original     		PDF NTD5802N, NVD5802N NTD5802N/D

    5802N

    Abstract: NTD5802NT4G 5802NG
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		PDF NTD5802N NTD5802N/D 5802N NTD5802NT4G 5802NG

    Untitled

    Abstract: No abstract text available
    Text: NTD5802N, NVD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C 100% Avalanche Tested


    Original     		PDF NTD5802N, NVD5802N NTD5802N/D

    NTD5802NT4G

    Abstract: 5802N
    Text: NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified


    Original     		PDF NTD5802N NTD5802N/D NTD5802NT4G 5802N

    BUK7510-100B

    Abstract: 7610-100B
    Text: BUK7510-100B N-channel TrenchMOS standard level FET Rev. 03 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7510-100B BUK7510-100B 7610-100B

    BUK7610-100B

    Abstract: No abstract text available
    Text: BUK7610-100B N-channel TrenchMOS standard level FET Rev. 03 — 12 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7610-100B BUK7610-100B

    BUK95

    Abstract: BUK9510-100B
    Text: TO -22 0A B BUK9510-100B N-channel TrenchMOS logic level FET Rev. 3 — 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9510-100B BUK95 BUK9510-100B