IRF9Z24L
Abstract: IRF9Z24S SiHF9Z24S
Text: IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
|
Original
|
PDF
|
IRF9Z24S,
SiHF9Z24S
IRF9Z24L,
SiHF9Z24L
2002/95/EC
11-Mar-11
IRF9Z24L
IRF9Z24S
|
IRF9510S
Abstract: No abstract text available
Text: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9510S,
SiHF9510S
O-263)
2002/95/EC
11-Mar-11
IRF9510S
|
IRF9530S
Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9530S,
SiHF9530S
O-263)
2002/95/EC
11-Mar-11
IRF9530S
SiHF9530S-E3
SiHF9530S-GE3
|
si7997
Abstract: No abstract text available
Text: SPICE Device Model Si7997DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si7997DP
18-Jul-08
si7997
|
sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
PDF
|
vse-db0090-1010
sharp laser diodes
TSOP855
|
Untitled
Abstract: No abstract text available
Text: T95 Vishay Sprague Solid Tantalum Chip Capacitors, TANTAMOUNT , High-Rel COTS, Conformal Coated Case FEATURES • High reliability; Weibull grading available • Surge current testing per MIL-PRF-55365 options available • Standard and low ESR options • Terminations: SnPb, standard. 100 % tin
|
Original
|
PDF
|
MIL-PRF-55365
2002/95/EC
18-Jul-08
|
SQD50N04-4m5L
Abstract: SQD50N04-4M5L-GE3
Text: SQD50N04-4m5L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
|
Original
|
PDF
|
SQD50N04-4m5L
AEC-Q101
2002/95/EC
O-252
O-252
SQD50N04-4m5L-GE3
18-Jul-08
SQD50N04-4m5L
SQD50N04-4M5L-GE3
|
SQJ469EP
Abstract: No abstract text available
Text: SQJ469EP Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 6 V 0.029 ID (A) - 32 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SQJ469EP
2002/95/EC
AEC-Q101
SQJ469EP-T1-GE3
11-Mar-11
SQJ469EP
|
G 1754 diode
Abstract: Diode 1754
Text: SQS404EN Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.013 RDS(on) () at VGS = 4.5 V 0.015 ID (A) • TrenchFET Power MOSFET
|
Original
|
PDF
|
SQS404EN
2002/95/EC
AEC-Q101
SQS404EN-T1-GE3
18-Jul-08
G 1754 diode
Diode 1754
|
Untitled
Abstract: No abstract text available
Text: IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.20 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9540S,
SiHF9540S
2002/95/EC
O-263)
18-Jul-08
|
SQJ412EP
Abstract: No abstract text available
Text: SQJ412EP Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0045 RDS(on) () at VGS = 4.5 V 0.0055 ID (A) • TrenchFET Power MOSFET
|
Original
|
PDF
|
SQJ412EP
2002/95/EC
AEC-Q101
SQJ412EP-T1-GE3
11-Mar-11
SQJ412EP
|
Untitled
Abstract: No abstract text available
Text: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SQS466EEN
2002/95/EC
AEC-Q101
SQS466EEN-T1-GE3
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
18-Jul-08
|
capacitor 0.01 k 630 MKT
Abstract: capacitor 0.33 k 100 MKT
Text: MKT 1822 Vishay Roederstein Metallized Polyester Film Capacitor Related Document: IEC 60384-2 FEATURES Dimensions in millimeters L Max. W Max. Marking • Compliant to RoHS directive 2002/95/EC RATED VOLTAGES UR H Max. 63 VDC, 100 VDC, 250 VDC, 400 VDC, 630 VDC,
|
Original
|
PDF
|
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
capacitor 0.01 k 630 MKT
capacitor 0.33 k 100 MKT
|
|
|
91077
Abstract: No abstract text available
Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9530S,
SiHF9530S
2002/95/EC
O-263)
18-Jul-08
91077
|
Untitled
Abstract: No abstract text available
Text: SQ4920EY Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.016 • TrenchFET Power MOSFET RDS(on) () at VGS = 4.5 V
|
Original
|
PDF
|
SQ4920EY
2002/95/EC
AEC-Q101
SQ4920EY-T1-GE3
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SQS466EEN
2002/95/EC
AEC-Q101
SQS466EEN-T1-GE3
11-Mar-11
|
sq2337es
Abstract: No abstract text available
Text: New Product SQ2337ES Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.270 ID (A) - 2.2 TO-236 (SOT-23) G S 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
SQ2337ES
O-236
OT-23)
2002/95/EC
AEC-Q101
SQ2337ES
OT-23
SQ2337ES-T1-GE3
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: SQS464EEN Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
SQS464EEN
2002/95/EC
AEC-Q101
SQS464EEN-T1-GE3
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: SQD50N04-4m5L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
|
Original
|
PDF
|
SQD50N04-4m5L
AEC-Q101
2002/95/EC
O-252
O-252
SQD50N04-4m5L-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC DIST R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR B1 DESCRIPTION REVISED PER DATE DWN HMR MW 02AUG10 E C O - 1 0 - 0 1 41 68
|
OCR Scan
|
PDF
|
02AUG10
FTD0904
|
FTD0904
Abstract: nut ring
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 2 3 RELEASED FOR PUBLICATION LOC DIST R E VIS IO N S ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LTR DESCRIPTION REVISED PER DATE DWN HMR MW 02AUG10 E C O - 1 0 - 0 1 41 68 APVD D D DETAIL1
|
OCR Scan
|
PDF
|
02AUG10
FTD0904
ALLAUG10
nut ring
|
BC360
Abstract: No abstract text available
Text: 6 7 TH IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 3 2 PU B LIC ATIO N R E VIS IO N S D IS T LOC ALL INTERNATIONAL RIGHTS RESERVED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. LTR A1 D E S C R IP T IO N REVISED PER DATE DWN 02AUG10 E C O - 1 0 - 0 1 41 68
|
OCR Scan
|
PDF
|
02AUG10
ETD7904
BC360
|
C 128 N
Abstract: No abstract text available
Text: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R P U B L IC A T IO N A L L INTERNATIO NAL RIGHTS C O P Y R IG H T - B Y TYCO E LE C TR O N IC S 1 - QUALITY 2. RESERVED. C O R P O R A TIO N . C ON F O R M A N C E PACKAGED PER I NSPECTION SLOT
|
OCR Scan
|
PDF
|
|