02APR
Abstract: No abstract text available
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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Original
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-lead
02APR
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PDF
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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Original
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M48Z129Y
M48Z129V
M48Z129Y
M48Z129V:
M48Z129V
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PDF
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Untitled
Abstract: No abstract text available
Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)
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Original
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M45PE80
33MHz
4014h)
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PDF
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M48Z35
Abstract: M48Z35Y SOH28 PCDIP28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:
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Original
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-lead
M48Z35
M48Z35Y
SOH28
PCDIP28
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PDF
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M45PE80
Abstract: numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package
Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory
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Original
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M45PE80
4014h)
M45PE80
numonyx M45PE80
VFQFPN8
E4247
SO8 Wide Package
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PDF
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SOH28
Abstract: M48Z35AV
Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE
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Original
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M48Z35AV
256Kbit
32Kbit
28-lead
PCDIP28
M48Z35AV:
SOH28
M48Z35AV
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PDF
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Marking STMicroelectronics Single digit week
Abstract: VDFPN8 package M45PE80 SO16 wide package
Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory
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Original
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M45PE80
4014h)
Marking STMicroelectronics Single digit week
VDFPN8 package
M45PE80
SO16 wide package
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PDF
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STANDARD DIN 6784
Abstract: No abstract text available
Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■
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Original
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M48Z35AV
M48Z35AV:
28-lead
STANDARD DIN 6784
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PDF
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Untitled
Abstract: No abstract text available
Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)
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Original
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M45PE80
25MHz
4014h)
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PDF
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k 2608
Abstract: M48Z35 M48Z35Y SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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Original
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
PCDIP28
28-lead
k 2608
M48Z35
M48Z35Y
SOH28
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PDF
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Sawtek 280 mhz filter
Abstract: Sawtek Sawtek 140
Text: Part Number 856071 140 MHz SAW Filter Data Sheet Features • • • • • • • • For broadband applications Typical 3 dB bandwidth of 16.2 MHz High attenuation Single-ended operation Ceramic Surface Mount Package SMP Small size Replaces Sawtek P/N 851927 (BW 3dB=16 MHz)
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Original
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02-Apr-2003
Sawtek 280 mhz filter
Sawtek
Sawtek 140
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PDF
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M48Z58
Abstract: M48Z58Y SOH28
Text: M48Z58 M48Z58Y 5V, 64Kbit 8Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1
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Original
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M48Z58
M48Z58Y
64Kbit
M48Z58:
M48Z58Y:
28-lead
M48Z58
M48Z58Y
SOH28
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z129V 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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Original
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M48Z129V
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PDF
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M48Z35AV
Abstract: SOH28
Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE
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Original
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M48Z35AV
M48Z35AV:
28-lead
PCDIP28
M48Z35AV
SOH28
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PDF
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AI06811B
Abstract: No abstract text available
Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms
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Original
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M45PE80
25MHz
4014h)
AI06811B
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PDF
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Untitled
Abstract: No abstract text available
Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms
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Original
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M45PE80
25MHz
4014h)
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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Original
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
PCDIP28
28-lead
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PDF
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VFQFPN8 6x5mm MLP8
Abstract: VFQFPN8
Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33MHz SPI Bus Interface Feature summary • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms
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Original
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M45PE80
33MHz
4014h)
VFQFPN8 6x5mm MLP8
VFQFPN8
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PDF
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M45PE80
Abstract: No abstract text available
Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface PRODUCT PREVIEW FEATURES SUMMARY • 8 Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 12 ms (typical) ■ Page Program (up to 256 Bytes) in 2 ms
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Original
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M45PE80
M45PE80
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ ■ WRITE protect voltages:
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Original
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
PCDIP28
28-lead
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PDF
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DIN 6784
Abstract: M48Z35AV SOH28
Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■
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Original
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M48Z35AV
M48Z35AV:
28-lead
DIN 6784
M48Z35AV
SOH28
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PDF
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M48Z58
Abstract: M48Z58Y SOH28 ST E3 0560 1N5817
Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra-low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28
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Original
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
28-lead
M48Z58
M48Z58Y
SOH28
ST E3 0560
1N5817
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 T H I S DRAWING I S UNPUBLI SHED. C 23 COPYRI GHT 2000 RELEASED FOR P UB L I CA T I O N 2000 LOC BY TYCO ELECTRONI CS CORPORATI ON. ALL RI GHTS RESERVED. REV ISIONS DIST GW P LTR DE SCRI PTI ON A DWN DATE Firs t issue 28JUL2006 AM APVD DB D D View w ith centre conductor mounted
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OCR Scan
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28JUL2006
02APR2003
08APR2003
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PDF
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Untitled
Abstract: No abstract text available
Text: 02-APR-2003 08=34 FROM m TO i 901132794449 P.02/02 . * typical luminous spectrum 0 3,8 Wavnlsnoth |nm] Colour coordinates lF - 20mA; TA = 25°C x * 0,31 ± 0,06 y = 0,32 ± 0,08 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen.
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OCR Scan
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02-APR-2003
15015X5XXX
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PDF
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