Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    02APR2003 Search Results

    02APR2003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02APR

    Abstract: No abstract text available
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-lead 02APR

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z129Y M48Z129V M48Z129Y M48Z129V: M48Z129V

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 33MHz 4014h)

    M48Z35

    Abstract: M48Z35Y SOH28 PCDIP28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-lead M48Z35 M48Z35Y SOH28 PCDIP28

    M45PE80

    Abstract: numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package
    Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE80 4014h) M45PE80 numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package

    SOH28

    Abstract: M48Z35AV
    Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE


    Original     		PDF M48Z35AV 256Kbit 32Kbit 28-lead PCDIP28 M48Z35AV: SOH28 M48Z35AV

    Marking STMicroelectronics Single digit week

    Abstract: VDFPN8 package M45PE80 SO16 wide package
    Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE80 4014h) Marking STMicroelectronics Single digit week VDFPN8 package M45PE80 SO16 wide package

    STANDARD DIN 6784

    Abstract: No abstract text available
    Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■


    Original     		PDF M48Z35AV M48Z35AV: 28-lead STANDARD DIN 6784

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 25MHz 4014h)

    k 2608

    Abstract: M48Z35 M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: PCDIP28 28-lead k 2608 M48Z35 M48Z35Y SOH28

    Sawtek 280 mhz filter

    Abstract: Sawtek Sawtek 140
    Text: Part Number 856071 140 MHz SAW Filter Data Sheet Features • • • • • • • • For broadband applications Typical 3 dB bandwidth of 16.2 MHz High attenuation Single-ended operation Ceramic Surface Mount Package SMP Small size Replaces Sawtek P/N 851927 (BW 3dB=16 MHz)


    Original     		PDF 02-Apr-2003 Sawtek 280 mhz filter Sawtek Sawtek 140

    M48Z58

    Abstract: M48Z58Y SOH28
    Text: M48Z58 M48Z58Y 5V, 64Kbit 8Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1


    Original     		PDF M48Z58 M48Z58Y 64Kbit M48Z58: M48Z58Y: 28-lead M48Z58 M48Z58Y SOH28

    Untitled

    Abstract: No abstract text available
    Text: M48Z129V 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z129V

    M48Z35AV

    Abstract: SOH28
    Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE


    Original     		PDF M48Z35AV M48Z35AV: 28-lead PCDIP28 M48Z35AV SOH28

    AI06811B

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms


    Original     		PDF M45PE80 25MHz 4014h) AI06811B

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms


    Original     		PDF M45PE80 25MHz 4014h)

    Untitled

    Abstract: No abstract text available
    Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		PDF M48Z58 M48Z58Y M48Z58: M48Z58Y: PCDIP28 28-lead

    VFQFPN8 6x5mm MLP8

    Abstract: VFQFPN8
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33MHz SPI Bus Interface Feature summary • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms


    Original     		PDF M45PE80 33MHz 4014h) VFQFPN8 6x5mm MLP8 VFQFPN8

    M45PE80

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface PRODUCT PREVIEW FEATURES SUMMARY • 8 Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 12 ms (typical) ■ Page Program (up to 256 Bytes) in 2 ms


    Original     		PDF M45PE80 M45PE80

    Untitled

    Abstract: No abstract text available
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: PCDIP28 28-lead

    DIN 6784

    Abstract: M48Z35AV SOH28
    Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■


    Original     		PDF M48Z35AV M48Z35AV: 28-lead DIN 6784 M48Z35AV SOH28

    M48Z58

    Abstract: M48Z58Y SOH28 ST E3 0560 1N5817
    Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra-low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28


    Original     		PDF M48Z58 M48Z58Y M48Z58: M48Z58Y: 28-lead M48Z58 M48Z58Y SOH28 ST E3 0560 1N5817

    Untitled

    Abstract: No abstract text available
    Text: 3 T H I S DRAWING I S UNPUBLI SHED. C 23 COPYRI GHT 2000 RELEASED FOR P UB L I CA T I O N 2000 LOC BY TYCO ELECTRONI CS CORPORATI ON. ALL RI GHTS RESERVED. REV ISIONS DIST GW P LTR DE SCRI PTI ON A DWN DATE Firs t issue 28JUL2006 AM APVD DB D D View w ith centre conductor mounted


    OCR Scan     		PDF 28JUL2006 02APR2003 08APR2003

    Untitled

    Abstract: No abstract text available
    Text: 02-APR-2003 08=34 FROM m TO i 901132794449 P.02/02 . * typical luminous spectrum 0 3,8 Wavnlsnoth |nm] Colour coordinates lF - 20mA; TA = 25°C x * 0,31 ± 0,06 y = 0,32 ± 0,08 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen.


    OCR Scan     		PDF 02-APR-2003 15015X5XXX