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    0257S2Ö Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY Advanced Micro Devices AmC002AFLKA 2 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 mA typical standby current


    OCR Scan     		PDF AmC002AFLKA 68-pin 55752a 332ab

    CLV044

    Abstract: 56497
    Text: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to


    OCR Scan     		PDF Am27C1024 16-Bit) 40-Pin 44-Pin 8M-7/94-0 06780H 0ES755Ã CLV044 56497

    D0304

    Abstract: T-46
    Text: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:


    OCR Scan     		PDF 02S7S2Ã 003D4S3 T-46-13-29 Am27C1024 16-Bit) 40-pin 0D304L 06780-009E D0304 T-46

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8F 020 A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current


    OCR Scan     		PDF 32-Pin Am28F020A

    Untitled

    Abstract: No abstract text available
    Text: AD V MICRO MEMORY 4ÖE i> Ü2575SÔ DGaObSfi H T -4 6 -1 3 -2 5 Am27X2048 2 Megabit (131,072 x 16-Bit) CMOS ExpressROM Device 4 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed


    OCR Scan     		PDF 2575SÃ Am27X2048 16-Bit) KS000010 0205-005A

    Untitled

    Abstract: No abstract text available
    Text: a PRELIMINARY Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current


    OCR Scan     		PDF AmC004AFLKA 68-pin G033354 1888888888888888I 7274A-21 0257S2Ã

    am28F020

    Abstract: 28F020
    Text: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption


    OCR Scan     		PDF 0D3D74b Am28F020 32-Pin -32-pin T-46-13-27 Am28F020-95C4JC Am28F020-95C3JC 28F020

    AM27C512

    Abstract: AM27C512-120DC
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T-46-13-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


    OCR Scan     		PDF 303bfi T-46-13-29 Am27C512 512K-bit, D0303Ã AIYI27C512 AM27C512-120DC

    AM27S29A/BRA

    Abstract: No abstract text available
    Text: ADV MICRO IME 0 I 0257550 0007753 3 | MEMORY a Am27S29/Am27S29A/Am27S29SA Advanced Micro Devices 4,096-Bit 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses • High programming yield


    OCR Scan     		PDF Am27S29/Am27S29A/Am27S29SA 096-Bit 512x8) Am27S29 512-words TC003442 TC003452 KS000010 AM27S29A/BRA

    Untitled

    Abstract: No abstract text available
    Text: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		PDF Am28F256A 32-Pin 033A1b

    Am2BF010A

    Abstract: to525 Transistor 2SC 2166
    Text: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■


    OCR Scan     		PDF Am28F010A 32-Pin 0D327b5 Am2BF010A to525 Transistor 2SC 2166

    Untitled

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current


    OCR Scan     		PDF Am28F256A 32-pin 28F256A 0D32b3M

    Untitled

    Abstract: No abstract text available
    Text: a Advanced Micro Devices Am27X256 256 Kilobit 32,768 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime


    OCR Scan     		PDF Am27X256 Am33C93A

    programming 29F400

    Abstract: COVIC
    Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ 5.0 V ± 10% read, w rite, and erase — Minimizes system level power requirements


    OCR Scan     		PDF Am29F400T/Am29F400B 8-Bit/262 16-Bit) 29F400T/Am29F400B 0257S2Ã 0D325bb programming 29F400 COVIC

    AM27C64

    Abstract: DG3032 AM27C64-90DC
    Text: ADV MICRO MEMORY MAE D • 0257550 0030312 T ■ AflDM Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access tlme-55 ns Low power consumption: -100 jiA maximum standby current ■ JEDEC-approved pinout ■


    OCR Scan     		PDF Am27C64 tlme-55 64K-bjt, DG3032b T-46-13-29 DG3032 AM27C64-90DC

    AMD am3 socket pinout

    Abstract: amd am3 pin out AM28F512
    Text: ADV MI CR O MEM OR Y 4fiE D 02S7SEÖ Preliminary DG30bäS 5 « A M D 4 T—46—13—27 Advanced Micro Devices A m 2 8 F 5 1 2 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time • Low power consumption


    OCR Scan     		PDF 02S7SEÃ Am28F512 32-pin T-46-13-27 compatibleD25752Ã 0Q3G714 T-46-13-2 Am28F512-95C4JC Am28F512-95C3JC AMD am3 socket pinout amd am3 pin out

    AM28F020

    Abstract: D0307 28F020 G03G 32ag
    Text: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption


    OCR Scan     		PDF 0D3D74b Am28F020 32-Pin -32-pin T-46-13-27 Am28F020-95C4JC Am28F020-95C3JC D0307 28F020 G03G 32ag

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T -4 6 -1 3-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


    OCR Scan     		PDF 02S7SSÃ Am27C512 512K-btt, D0303Ã AID27C512 T-46-13-29

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY bME J> • 025752Û 0032000 554 ■ AMDM ZI Advanced Micro Devices Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 100 ns ■ Low power consumption — Typical programming time of 1 minute


    OCR Scan     		PDF Am27C040 28-pin 32-pin KS000010 14971C-9

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO M EM O R Y 3ÔE Q • 0257S2Ö DDS^Sbö 7 ■ T - 4 4 - IV 2 9 Am27C1024 AMD4 d Advanced Micro Devices 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrlte programming ■ Fast access time — 100 ns ■


    OCR Scan     		PDF 0257S2Ö Am27C1024 16-Bit) 40-pin T-46-13-29 D2S752fl

    OA95

    Abstract: mee7
    Text: a Advanced Micro Devices A m 28F 01 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access tim e ■ CMOS low power consum ption ■ — 30 mA maximum active current


    OCR Scan     		PDF Am28F01 32-Pin Am28F010A 3402b OA95 mee7