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    Untitled

    Abstract: No abstract text available
    Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e


    OCR Scan     		PDF 32-Pin Am28F010A

    am29f010

    Abstract: No abstract text available
    Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands


    OCR Scan     		PDF Am29F010 32-pin Am29F040 02S7S2A

    AM2BF010

    Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
    Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption


    OCR Scan     		PDF Am28F010 32-Pin AM2BF010 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200

    Untitled

    Abstract: No abstract text available
    Text: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation


    OCR Scan     		PDF 025752B 003423b

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 9 F0 1 6 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards


    OCR Scan     		PDF 48-pin Am29F016

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8F 020 A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current


    OCR Scan     		PDF 32-Pin Am28F020A

    AM29F040A

    Abstract: 17113D-4 AMD date code 29f040 Am29F040
    Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards


    OCR Scan     		PDF Am29F040 32-pin 0257S2fl 0033bH3 AM29F040A 17113D-4 AMD date code 29f040

    Untitled

    Abstract: No abstract text available
    Text: a PRELIMINARY Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current


    OCR Scan     		PDF AmC004AFLKA 68-pin G033354 1888888888888888I 7274A-21 0257S2Ã

    EE-21

    Abstract: 28F010P
    Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current


    OCR Scan     		PDF Am28F010 32-Pin D55752fl D3273D EE-21 28F010P

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO IME MEMORY 57C401/13 57C402/23 D I □2S7S5Û ooa?ast. g 57C4033 I a dvanced Micro Devices Military CMOS Zero Power FIFOs 64x4 64x5 Memory 12 MHz Cascadable Conforms to MIL-STD-883, Class B (Latest Revision) DISTINCTIVE CHARACTERISTICS • Zero standby power


    OCR Scan     		PDF 57C401/13 57C402/23 57C4033 MIL-STD-883, 57C4013/23/33) 00272b? Q7319B

    29f200b

    Abstract: 0032M AM29 FLASH SO044
    Text: PRELIM INARY Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements


    OCR Scan     		PDF Am29F200T/Am29F200B 8-Bit/131 16-Bit) 44-pin 48-pin 29f200b 0032M AM29 FLASH SO044

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD* Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • Data Polling and toggle bit DISTINCTIVE CHARACTERISTICS — Detects program and erase cycle completion ■ 2.7 to 3.6 volt, extended voltage range for read


    OCR Scan     		PDF Am29LV004T/Am29LV004B 40-pin Am29LV004 0S575Sf DD34S73

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY n Am29F080 Advanced Micro Devices 8-Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Program Algorithms ■ 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29F080

    amd socket 940 pinout

    Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
    Text: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to


    OCR Scan     		PDF Am27C020 28-pin 32-pin 8M-7/94-0 11507E amd socket 940 pinout SSC 9500 KSS 8006 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO {MEMORY} Tb D E | 02S7S2Û DDEbSST Am93L469 5 1 2 x9 TTL Low-Power Tag Buffer Am93L469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 45-ns address to comparator output MATCH Replaces six or more integrated circuits with a single device


    OCR Scan     		PDF 02S7S2Ã Am93L469 45-ns Am93469 02S752A

    DG33 transistor

    Abstract: No abstract text available
    Text: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time


    OCR Scan     		PDF 32-Pin Am28F512A DG33 transistor

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO L.4E D MEMORY • 02S7Saa 0Q321D1 ÛÛO ■ PRELIMINARY a Advanced Micro Devices A m 2 7 L V 0 1 0 /A m 2 7 L V 0 1 O B 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V


    OCR Scan     		PDF 02S7Saa 0Q321D1 7341A-11 Am27LV010/Am27LV01

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF Am28F256 32-pin Am28F256-75 025752fl DD32b01

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single 3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (battery-operated systems)


    OCR Scan     		PDF Am27LV020/Am27LV020B 28-pin 32-pin Am33C93A

    29F040

    Abstract: No abstract text available
    Text: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards


    OCR Scan     		PDF Am29F040 32-pin DD33427 TSR032 025752fl 29F040

    AM27G512-200

    Abstract: AM27G
    Text: ADV MI CR O MEMORY 14E D | t - q 0 E S 7 S 2 Û 0 0 2 7 3 ^ 5 fl | u i ' ? , - Q A A m 2 7 C 5 1 2 Adva£ 65,536 x 8-Bit CMOS EPROM Devices D ISTIN CTIVE CH ARACTERISTICS • • • Fast access tim e — 90 ns Low power consumption; - 1 0 0 ¡th maximum standby current


    OCR Scan     		PDF Am27C512 512K-bit, WF021992 27C010 AM27G512-200 AM27G

    PEB 2261

    Abstract: 0034D A03407
    Text: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current


    OCR Scan     		PDF Am28F020A 32-Pin -32-pin PEB 2261 0034D A03407

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY b4 E D • G2S7SSÖ 0G325QS 3 0 7 ■AM1>4 z \ Advanced Micro Devices Am27X2048 2 Megabit (131,072 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed


    OCR Scan     		PDF 0G325QS Am27X2048 16-Bit) KS000010 15653B-9

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at


    OCR Scan     		PDF 16-Megabit 48-pin Am29F016 G25752A 0033DSb TSR048 16-038-TS48 DA104