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    Untitled

    Abstract: No abstract text available
    Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e


    OCR Scan     		PDF 32-Pin Am28F010A

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF Am28F256 32-Pin 0257S2Ã

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


    OCR Scan     		PDF G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout

    am29f010

    Abstract: No abstract text available
    Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands


    OCR Scan     		PDF Am29F010 32-pin Am29F040 02S7S2A

    Untitled

    Abstract: No abstract text available
    Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF 32-Pin Am28F512 28F5l Am28F512-75 02S752A QD32bbS

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY Advanced Micro Devices AmC002AFLKA 2 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 mA typical standby current


    OCR Scan     		PDF AmC002AFLKA 68-pin 55752a 332ab

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29F400AT/Am29F400AB 8-Bit/262 16-Bit) 44-pin 48-pin 0E5752Ã Am29F400T/Am29F400B 18612B.

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:


    OCR Scan     		PDF Am27C010 28-Pin 32-Pin 0205-009A AITI27C010

    Untitled

    Abstract: No abstract text available
    Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time


    OCR Scan     		PDF 32-Pin 28F512A 2S752Ã 0032fc

    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


    OCR Scan     		PDF GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC

    AM28F020

    Abstract: qu34 A03404
    Text: Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ ■ ■ CMOS Low power consumption ■ — 100 n A m a xim um s ta n d b y c u rre n t Flashrite Programming


    OCR Scan     		PDF Am28F020 32-Pin -32-pin 02S752Ã 3MD57 qu34 A03404

    AM2BF010

    Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
    Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption


    OCR Scan     		PDF Am28F010 32-Pin AM2BF010 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200

    29F080

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements


    OCR Scan     		PDF Am29F080 44-pin 02S752Ã a0337bl 29F080

    Untitled

    Abstract: No abstract text available
    Text: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation


    OCR Scan     		PDF 025752B 003423b

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8F 020 A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current


    OCR Scan     		PDF 32-Pin Am28F020A

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO M E M OR Y 1ME D | 0257553 0 0 2 7 5=1 0 1 | A m 9 1 2 8 2048x8 Static RAM Devices DISTIN C TIVE CHARA CTERISTICS • • • Logic voltage levels compatible with TTL Three-state output buffers and common I /O Ice Max., as low as 100 mA • • ¡AA^ACS as low as 70 ns


    OCR Scan     		PDF 2048x8 Am9128 384-bit OPOOO66O OP000690 OPOOO68O OP00067Ã OP000650 OP000640 OP000710

    AM29F040A

    Abstract: 17113D-4 AMD date code 29f040 Am29F040
    Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards


    OCR Scan     		PDF Am29F040 32-pin 0257S2fl 0033bH3 AM29F040A 17113D-4 AMD date code 29f040

    Untitled

    Abstract: No abstract text available
    Text: a PRELIMINARY Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current


    OCR Scan     		PDF AmC004AFLKA 68-pin G033354 1888888888888888I 7274A-21 0257S2Ã

    Untitled

    Abstract: No abstract text available
    Text: a Advanced Micro Devices Am27X040 4 Megabit 524,288 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed


    OCR Scan     		PDF Am27X040 Am33C93A

    EE-21

    Abstract: 28F010P
    Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current


    OCR Scan     		PDF Am28F010 32-Pin D55752fl D3273D EE-21 28F010P

    Am26F010

    Abstract: am26f AM28F010
    Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption


    OCR Scan     		PDF Am28F010 32-Pin 0257S2Ã D033TÃ Am26F010 am26f

    AM27C512

    Abstract: AM27C512-120 am33c93a AM27C512-150 AM27C512-200 AM27C512-255DC ao,bh am33c93
    Text: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing


    OCR Scan     		PDF Am27C512 28-pin 32-pin Tcyc-10 Tcyc-25 Am33C93A AM27C512-120 AM27C512-150 AM27C512-200 AM27C512-255DC ao,bh am33c93

    programming AM29F400

    Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
    Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements


    OCR Scan     		PDF Am29F400T/Am29F400B 8-Bit/262 16-Bit) 44-pin 48-pin D257S2Ã 003S5bb programming AM29F400 TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB

    29f200b

    Abstract: 0032M AM29 FLASH SO044
    Text: PRELIM INARY Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements


    OCR Scan     		PDF Am29F200T/Am29F200B 8-Bit/131 16-Bit) 44-pin 48-pin 29f200b 0032M AM29 FLASH SO044