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    Infineon Technologies AG IPB023N06N3GATMA1

    MOSFET N-CH 60V 140A TO263-7
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    DigiKey IPB023N06N3GATMA1 Reel
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    Infineon Technologies AG IPB023N06N3G

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    Bristol Electronics IPB023N06N3G 352
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    IPB023N06N3G 30 3
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    023N06N

    Abstract: IPB023N06N3 G JESD22
    Text: 023N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 2.3 mΩ ID 140 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB023N06N3 PG-TO263-7 023N06N 023N06N IPB023N06N3 G JESD22

    023N06N

    Abstract: IEC61249-2-21 JESD22
    Text: Type 023N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 2.3 mΩ ID 140 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB023N06N3 IEC61249-2-21 PG-TO263-7 023N06N 023N06N IEC61249-2-21 JESD22