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    020N06N Search Results

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    020N06N Price and Stock

    Infineon Technologies AG IPP020N06NAKSA1

    MOSFET N-CH 60V 29A/120A TO220-3
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    DigiKey IPP020N06NAKSA1 Tube 662 1
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    Avnet Americas IPP020N06NAKSA1 Tube 21,250 20 Weeks 1
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    Bristol Electronics IPP020N06NAKSA1 350
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    TME IPP020N06NAKSA1 1
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    Chip One Stop IPP020N06NAKSA1 Tube 1,392
    • 1 $3.23
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    EBV Elektronik IPP020N06NAKSA1 21 Weeks 500
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    Infineon Technologies AG IPP020N06NXKSA1

    TRENCH 40<-<100V
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    DigiKey IPP020N06NXKSA1 Tube 498 1
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    Avnet Americas IPP020N06NXKSA1 Tube 18 Weeks 50
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    Mouser Electronics IPP020N06NXKSA1
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    EBV Elektronik IPP020N06NXKSA1 19 Weeks 500
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    Infineon Technologies AG IPI020N06NAKSA1

    MOSFET N-CH 60V 29A/120A TO262
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    Rochester Electronics IPI020N06NAKSA1 20 1
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    TME IPI020N06NAKSA1 1
    • 1 $3.61
    • 10 $2.48
    • 100 $2.15
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    020N06N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IPP020N06N

    Abstract: 020n06n
    Text: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel


    Original     		IPP020N06N IEC61249-2-21 PG-TO220-3 020N06N 50K/W IPP020N06N 020n06n PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel


    Original     		IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel


    Original     		IPP020N06N IEC61249-2-21 PG-TO220-3 020N06N PDF

    PG-TO262-3

    Abstract: No abstract text available
    Text: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W PG-TO262-3 PDF

    ipi020n

    Abstract: No abstract text available
    Text: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel


    Original     		IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W ipi020n PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel


    Original     		IPP020N06N PG-TO220-3 IEC61249-2-21 020N06N PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPP020N06N IEC61249-2-21 PG-TO220-3 020N06N PDF