Untitled
Abstract: No abstract text available
Text: 4 3 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT20 2 20 LOC REVISIONS DIST - ALL RIGHTS RESERVED. BY - 1 - P LTR C1 DESCRIPTION DATE REDESIGNED BY ECO-12-008349 DWN FC 01JUN2012 APVD GOJ D D 5,3 3,5 12,0 3,5 SECTION A-A 8,0 C C 5,3 2,3
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COPYRIGHT20
ECO-12-008349
01JUN2012
626279C
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164164-1
Abstract: 164164-2
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C 3 1 20 LOC B ALL RIGHTS RESERVED. BY - COPYRIGHT 20 2 REVISIONS DIST E P LTR DESCRIPTION M DATE ECR-12-010700 DWN MJG 11/06/12 APVD DP 33 D D 1.6 PLATING ZONES ZONE 3 ZONE 2 ZONE 1 11.7MIN 1.5 A B 5.8
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ECR-12-010700
87MAX
EIA/ECA-364-1000
01JUN2012
01JUN2012
A200779
164164-1
164164-2
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VND7030AJ
Abstract: No abstract text available
Text: VND7030AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Reverse battery with external components
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VND7030AJ-E
DocID17963
VND7030AJ
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Untitled
Abstract: No abstract text available
Text: VND7030AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Reverse battery with external components
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VND7030AJ-E
DocID17963
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT20 2 3 1 20 LOC BY - REVISIONS DIST B ALL RIGHTS RESERVED. E P LTR DESCRIPTION M1 DATE COLOR CODE DETAILS ADDED DWN APVD TJ 09JAN2014 JK 33.0 D D PIN BODY SEE TABLE 1.6 9 SPRING PLATING ZONES
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COPYRIGHT20
09JAN2014
01JUN2012
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Untitled
Abstract: No abstract text available
Text: WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 *Low Collector-Emitter Saturation Voltage *High Breakdown Voltage 2 1. BASE 2. COLLECTOR 3. EMITTER 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage VCBO
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WTMA44
OT-89
WTMA44
01-Jun-2012
OT-89
500TYP
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sigma asc 333
Abstract: No abstract text available
Text: ST10F272B ST10F272E 16-bit MCU with 256 Kbyte Flash memory and 12/20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 31.25ns instruction cycle time at 64MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit
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ST10F272B
ST10F272E
16-bit
64MHz
16-bit
40-bit
32-bit
sigma asc 333
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amp 4805 connectors
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION TE CONNECTIVITY 6 5 4 3 2 20 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR D1 1.300 .010 D DATE REV PER ECR-12-011257 DWN "AMP" PART NUMBER AND DATE CODE TO BE MARKED IN AREA SHOWN.
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ECR-12-011257
23MAR20006
amp 4805 connectors
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5203
Abstract: No abstract text available
Text: Model 5203 Revere Double-Ended Beam Load Cell FEATURES • Capacities: 1k to 75k lbs • Environmental protection: IP67 DIN 40.050 • Material: nickel-plated steel • Center-loaded design • Optional ❍❍ FM certified versions are available for use in
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27-Apr-2011
5203
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Untitled
Abstract: No abstract text available
Text: BT05S thru BT10S SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 0.8 Ampere BTS FEATURES .071 1.8 .055(1.4) ●Rating to 1000V PRV ●Ideal for printed circuit board ●Lead tin plated copper MECHANICAL DATA
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BT05S
BT10S
300us
01-Jun-2012
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EF52
Abstract: No abstract text available
Text: ST10F272B ST10F272E 16-bit MCU with 256 Kbyte Flash memory and 12/20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 31.25ns instruction cycle time at 64MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit
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ST10F272B
ST10F272E
16-bit
64MHz
16-bit
40-bit
32-bit
EF52
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ULN2003 SO16
Abstract: uln2004 pin diagram of UlN2004 ULN2003 PIN DIAGRAM configuration ULN2001 ULN 2006 uln2002 equivalents uln2004a ULN2004 PIN DIAGRAM uln2003 st
Text: ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet − production data Features • Seven Darlingtons per package ■ Output current 500 mA per driver 600 mA peak ■ Output voltage 50 V ■ Integrated suppression diodes for inductive loads
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ULN2001,
ULN2002
ULN2003,
ULN2004
ULN2001A/2002A/2003A
ULN2003 SO16
uln2004
pin diagram of UlN2004
ULN2003 PIN DIAGRAM configuration
ULN2001
ULN 2006
equivalents uln2004a
ULN2004 PIN DIAGRAM
uln2003 st
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ULN2003 ac
Abstract: ULN2003 ULN2003 features uln2004
Text: ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet − production data Features • Seven Darlingtons per package ■ Output current 500 mA per driver 600 mA peak ■ Output voltage 50 V ■ Integrated suppression diodes for inductive loads
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ULN2001,
ULN2002
ULN2003,
ULN2004
ULN2002,
ULN2003
ULN2003 ac
ULN2003 features
uln2004
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Untitled
Abstract: No abstract text available
Text: SSE90N04-03P 90A , 40V , RDS ON 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)
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SSE90N04-03P
O-220P
O-220P
01-Jun-2012
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