Untitled
Abstract: No abstract text available
Text: HM301D Diagnostic-quality acquisition system for bio-electric sensors and bio-impedance measurements Datasheet - preliminary data • Maximum data rate: 125 kSPS per channel Less than 1 mA/channel at full bandwidth and resolution DC and AC lead-off detection
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HM301D
IEC60601-2-27
DocID026157
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Untitled
Abstract: No abstract text available
Text: BAT30 Small signal Schottky diodes Datasheet - production data Features BAT30JFILM Single • Very low conduction losses • Negligible switching losses SOD-323 • Low forward and reverse recovery times BAT30KFILM (Single) • Extremely fast switching • Surface mount device
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BAT30
BAT30JFILM
OD-323
BAT30KFILM
OD-523
BAT30LFILM
OD-923
BAT30FILM
BAT30AFILM
OT-23
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p0102 circuits
Abstract: P0109DA p0109
Text: P010XX Sensitive standard SCRs up to 0.8 A Datasheet − production data Description A G A K KA K G G A SOT-223 P0102xN TO-92 (P010xxA) Thanks to highly sensitive triggering levels, the P010XX SCR series is suitable for all applications where available gate current is limited, such as
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P010XX
OT-223
P0102xN)
P010xxA)
P010XX
DocID15197
p0102 circuits
P0109DA
p0109
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M54HC132
Abstract: M54HC595KG M54HC138KG 920112001F
Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics
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M54HCxxx,
M54HCTxxx
Flat-14
DIL-14
Flat-16
DIL-16
DocID17367
M54HC132
M54HC595KG
M54HC138KG
920112001F
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marking code RAD SMD Transistor npn
Abstract: JS55
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
marking code RAD SMD Transistor npn
JS55
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Untitled
Abstract: No abstract text available
Text: TS2012EI Filter-free Flip Chip stereo 2 x 2.5 W class D audio power amplifier Datasheet - production data Applications LOUT- STDBYL PGND • Cellular phones ROUT- PDA LOUT+ STDBYR AGND Description ROUT+ PVCC G1 G0 AVCC LIN+ INL+ LIN- RIN- RIN+ The TS2012EI is a fully-differential stereo class D
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TS2012EI
TS2012EI
DocID026152
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Untitled
Abstract: No abstract text available
Text: HM301D Diagnostic-quality acquisition system for bio-electric sensors and bio-impedance measurements Datasheet - preliminary data • Maximum data rate: 125 kSPS per channel Less than 1 mA/channel at full bandwidth and resolution DC and AC lead-off detection
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HM301D
IEC60601-2-27
DocID026157
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 1 ALL RIGHTS RESERVED. D SCALE 4:1 LOC MATERIAL: HOUSING - 94V-0 RATED POLYCARBONATE CLEAR TERMINAL TERMINAL - 0.36 [.014] THICK PHORSPHOR BRONZE PLATED WITH 0.178 µm
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CuZn33
ECO-12-012918
16JUL2012
ECO-13-015339
04OCT2013
ECO-14-004910
01APR2014
24JAN02
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Untitled
Abstract: No abstract text available
Text: STM32L15xQC STM3215xRC-A STM32L15xVC-A STM32L15xZC Ultra-low-power 32b MCU ARM -based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC, memory I/F Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply
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STM32L15xQC
STM3215xRC-A
STM32L15xVC-A
STM32L15xZC
256KB
C/105Â
32-bit
DocID026119
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PDF
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SOC2222AHR
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
SOC2222AHR
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Untitled
Abstract: No abstract text available
Text: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics
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2N2484HR
2N2484HR
DocID17734
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Untitled
Abstract: No abstract text available
Text: A5972D Up to 1.5 A step-down switching regulator for automotive applications Datasheet - production data Application • Dedicated to automotive applications Description SO8 Features Qualified following the AEC-Q100 requirements see PPAP for more details
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A5972D
AEC-Q100
A5972D
DocID13956
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Untitled
Abstract: No abstract text available
Text: STTH1003S Hight efficiency rectifier Datasheet - production data Description A K The STTH1003S is an ultrafast recovery power rectifier dedicated to energy recovery in PDP applications. A K A A K A K A It is especially designed for clamping function in energy recovery block. The compromise between
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STTH1003S
STTH1003S
STTH1003SG
O-220FPAB
STTH1003SFP
STTH1003SB
DocID11604
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
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520100204
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
520100204
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PDF
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HCC4047BKG
Abstract: HCC4041UBDG
Text: HCC40xxx HCC45xxx Rad-hard, high voltage, CMOS logic series Datasheet - production data Description Flat-14 DIL-14 Flat-16 DIL-16 Flat-24 The HCC40xxx and HCC45xxx series are composed of 70 types of high voltage CMOS functions, offering a set of highly noise tolerant
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HCC40xxx
HCC45xxx
Flat-14
DIL-14
Flat-16
HCC40xxx
HCC45xxx
DIL-16
Flat-24
DocID17102
HCC4047BKG
HCC4041UBDG
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Untitled
Abstract: No abstract text available
Text: STTH15L06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description K A A K TO-220AC The STTH15L06, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous
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STTH15L06
O-220AC
STTH15L06,
O-220FPAC
DocID10759
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Untitled
Abstract: No abstract text available
Text: STM32L15xQC STM3215xRC-A STM32L15xVC-A STM32L15xZC Ultra-low-power 32b MCU ARM -based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range
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STM32L15xQC
STM3215xRC-A
STM32L15xVC-A
STM32L15xZC
256KB
C/105Â
32-bit
DocID026119
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PDF
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Untitled
Abstract: No abstract text available
Text: STEVAL-IKR002V5 SPIRIT1 - low data rate transceiver - 915 MHz - full kit Data brief Description The STEVAL-IKR002V5 development kit includes 2 RF daughterboards based on the SPIRIT1 low power, sub-GHz low data rate transceiver suitable for ISM bands and wireless M-BUS, and
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STEVAL-IKR002V5
STEVAL-IKR002V5
STM32L
DocID025155
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