M48T35AY
Abstract: M4T32-BR12SH1 M4T32-BR12SH6 M48T35AV M4T28-BR12SH1 SOH28 M4T28-BR12SH1 equivalent 6845
Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T35AV
M48T35AY:
M48T35AV:
PCDIP28
M48T35AY
M4T32-BR12SH1
M4T32-BR12SH6
M48T35AV
M4T28-BR12SH1
SOH28
M4T28-BR12SH1 equivalent
6845
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PDF
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M48T37V
Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44
Text: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Automatic power-fail chip deselect and WRITE
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Original
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M48T37Y
M48T37V
M48T37Y:
M48T37V:
44-lead
M48T37V
M48T37Y
M4T28-BR12SH
M4T32-BR12SH
SOH44
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PDF
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SO8w
Abstract: No abstract text available
Text: M25PE40 4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical
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Original
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M25PE40
8013h)
SO8w
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PDF
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VDFPN8 package
Abstract: No abstract text available
Text: M25P32 32-Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode
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Original
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M25P32
32-Mbit,
2016h)
VDFPN8 package
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PDF
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Untitled
Abstract: No abstract text available
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage
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Original
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
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PDF
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M48T37V
Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44 AI009
Text: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultralow power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Year 2000 compliant
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Original
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M48T37Y
M48T37V
M48T37Y:
M48T37V:
SOH44
44-pin
M48T37V
M48T37Y
M4T28-BR12SH
M4T32-BR12SH
SOH44
AI009
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PDF
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VDFPN8 package
Abstract: M25P32 SO8w
Text: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode
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Original
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M25P32
32-Mbit,
2016h)
VDFPN8 package
M25P32
SO8w
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PDF
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M48T35AY
Abstract: STMicroelectronics M4T32-BR12SH6
Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T35AV
M48T35AV:
M48T35AY
STMicroelectronics
M4T32-BR12SH6
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PDF
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vdfpn8
Abstract: M25PE40 ST10 01DEC20
Text: M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 33 MHz SPI Bus, Standard Pinout FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Industrial Standard SPI Pinout 4Mbit of Page-Erasable Flash Memory
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Original
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M25PE40
33MHz
8013h)
vdfpn8
M25PE40
ST10
01DEC20
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PDF
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M48T35AV
Abstract: M48T35AY SOH28
Text: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T35AV
256Kbit
32Kbit
M48T35AY:
M48T35AV:
PCDIP28
M48T35AV
M48T35AY
SOH28
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PDF
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VDFPN 8x6
Abstract: 8x6mm M25P32 ST10 mlp 8x6
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit)
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Original
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
VDFPN 8x6
8x6mm
M25P32
ST10
mlp 8x6
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PDF
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M25PE40
Abstract: No abstract text available
Text: M25PE40 4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical
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Original
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M25PE40
8013h)
M25PE40
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PDF
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M25PE40
Abstract: ST10 JEDEC J-STD-020B
Text: M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 25 MHz SPI Bus, Standard Pin-out PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Industrial Standard SPI Pin-out 4Mbit of Page-Erasable Flash Memory
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Original
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M25PE40
25MHz
8013h)
M25PE40
ST10
JEDEC J-STD-020B
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PDF
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M25PE40
Abstract: No abstract text available
Text: M25PE40 4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit page-erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical – Page Program in 0.8 ms (typical)
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Original
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M25PE40
8013h)
64-Kbyte
M25PE40
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PDF
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M48T37V
Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44
Text: M48T37Y M48T37V 5.0 or 3.3V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra-low power SRAM, real time clock, power-fail control circuit, and battery ■ Frequency test output for real time clock software calibration ■ Year 2000 compliant
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Original
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M48T37Y
M48T37V
M48T37Y
M48T37V:
44-lead
M48T37V
M4T28-BR12SH
M4T32-BR12SH
SOH44
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PDF
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SO8 Wide Package
Abstract: M25PE40 ST10 VDFPN8 package
Text: M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 25 MHz SPI Bus, Standard Pinout PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Industrial Standard SPI Pinout 4Mbit of Page-Erasable Flash Memory
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Original
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M25PE40
25MHz
8013h)
SO8 Wide Package
M25PE40
ST10
VDFPN8 package
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PDF
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Untitled
Abstract: No abstract text available
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit)
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Original
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
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PDF
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M25PE40S
Abstract: No abstract text available
Text: M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 33 MHz SPI Bus, Standard Pinout Feature summary • Industrial Standard SPI Pinout ■ 4Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical)
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Original
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M25PE40
33MHz
8013h)
M25PE40S
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PDF
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VDFPN8
Abstract: No abstract text available
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage
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Original
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
VDFPN8
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PDF
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VDFPN8 package
Abstract: No abstract text available
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface Feature summary • 32Mbit of Flash Memory ■ 2.7 to 3.6V Single Supply Voltage ■ SPI Bus Compatible Serial Interface ■ 50MHz Clock Rate maximum ■ VPP = 9V for Fast Program/Erase mode
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Original
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
VDFPN8 package
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PDF
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74V1G66CTR
Abstract: STMicroelectronics SOT23 DATE CODE 74V1G66 74V1G66STR JESD97 DSA00361784 SOT323-5L wave soldering
Text: 74V1G66 Single bilateral switch Features • High speed: tPD = 0.3 ns typ. at VCC = 5 V tPD = 0.4 ns (typ.) at VCC = 3.3 V ■ Low power dissipation: ICC = 1 A (max.) at TA = 25 °C ■ Low "ON" resistance: RON = 6.5 Ω (typ.) at VCC = 5 V II/O = 1 mA
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Original
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74V1G66
OT23-5L
OT323-5L
74V1G66
74V1G66CTR
STMicroelectronics SOT23 DATE CODE
74V1G66STR
JESD97
DSA00361784
SOT323-5L wave soldering
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION - ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 2 .30 D CAROL STREAM, IL 60188 U.S.A. _ r m D □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ c \ <^5 <^5 <^5 <^5
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OCR Scan
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31MAR2000
ECO-05-10413
2M16ECL
2M16EC
01APR2004
2M16FC
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PDF
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2157H
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , LOC RESERVED. C O R P O R A T IO N . R E V IS IO N S D IS T 00 D E S C R IP T IO N A REVISED PER E C O - 0 9 - 0 1 7647
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OCR Scan
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290CT2009
L94V-0,
01-APR-2004
2157H
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PDF
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Untitled
Abstract: No abstract text available
Text: T H I S DRAWING IS U N P U B L I S H E D . C O P Y RI G HT 2 0 0 3 R E L E A S E D F OR P U B L I C A T I O N ’ 00 3 LOC AD BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R | | 3 H T S R E S E R V E D . 00 PCB HOLE D I M : DR I L L E D HOLE = . 7 0 0=L 0 . 0 2 5mm
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OCR Scan
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01APR2004
MAR200Ü
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PDF
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