c3072
Abstract: line filter 6.8mH C307-2
Text: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]
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C3072
C3072
016REF
10kHz,
100mVAC,
100mADC,
100kHz,
line filter 6.8mH
C307-2
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C3058
Abstract: No abstract text available
Text: C3058 REV D Product Description 1.4mH, 1.333:1 TR Line Transformer Meets requirements of IEC60950 for basic insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3058 XXXXX [9.91 MAX] 0.390 MAX 0.40 .016REF 1 8
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C3058
IEC60950
C3058
016REF
UL1950
E189690
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XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
SIRENZA
Sirenza C4 marking
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Sirenza amplifier SOT-89 Marking
Abstract: .XA2
Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
SXA-289
016REF
118REF
041REF
EDS-101247
Sirenza amplifier SOT-89 Marking
.XA2
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1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
1485C
SE 194
Sirenza amplifier SOT-89
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Xa2 TRANSISTOR
Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
016REF
118REF
041REF
EDS-100622
Xa2 TRANSISTOR
XA2 MMIC
Sirenza amplifier SOT-89
marking XA2
RF transistor marking IN SOT-89
sxa289
TOP MARKING C1 ROHM
ROHM SOT89 MARKING
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Xa2 TRANSISTOR
Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
Text: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
016REF
118REF
041REF
EDS-100622
Xa2 TRANSISTOR
transistor 289
MMIC "SOT 89" marking
rf power amplifier 850 MHZ
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SXT-289
Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
Pate02
016REF
118REF
041REF
EDS-101157
transistor 289
marking 25 mmic sot-89
MMIC "SOT 89" marking
Xa2 marking
Xa2 TRANSISTOR
xamp 034
XA2 MMIC
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diac kr 206
Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com
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element14
diac kr 206
BAS70WT
SMBJ11CA
FR107 SOD-123
db1 diac
EX 0045 bm diode zener
10A06 sources
812 6V8A
Zener Diode pev LF marking
PL 15Z DIODE
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marking 25 mmic sot-89
Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
SXT-289
016REF
118REF
041REF
EDS-101157
marking 25 mmic sot-89
RF transistor marking IN SOT-89
MARKING 30 SOT89 DBM
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ic 14040
Abstract: 14040
Text: C2684 REV Product Description E 1.15:1, 474µH CEP7 Line Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C2684 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface
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C2684
IEC60950
C2684
016REF
UL1950
NC/011396
E189690
ic 14040
14040
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C300-2
Abstract: 15364
Text: C3002 REV Product Description E Globespan CO ADSL over POTS 1.41:1 Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3002 XXXXX [9.91 MAX] 0.390 MAX
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C3002
IEC60950
C3002
016REF
100KHz,
24Vrms
UL1950
NC/011647
E189690
C300-2
15364
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Untitled
Abstract: No abstract text available
Text: C2937L REV Product Description B 1.39:1 TR, 100µH CEP7 Line Interface Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code COEV C2937L XXXXX [9.91 MAX] 0.390 MAX
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C2937L
IEC60950
C2937L
016REF
NC/011396
E189690
UL94V-0
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Xa3 TRANSISTOR
Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Text: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102231
Xa3 TRANSISTOR
041R
267M3502104
MCH18
MMIC "SOT 89" marking
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xa3b
Abstract: No abstract text available
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
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SXA-389B
SXA-389BZ
MPO-100136
016REF
118REF
041REF
015TYP
SXA-389B
EDS-102915
xa3b
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XA2 MMIC
Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
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Untitled
Abstract: No abstract text available
Text: TM Micro Commercial Components A D D C B Cathode Mark DO-41 DO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE DIM A B C D DIM A B C D MAX 5.20 2.70 .64 - NOTE DIM A B C D DIM
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DO-41
DO-35
DO-201AD
DO-35G
DO-15
050TYP
27TYP
O-92MOD
059TYP
50TYP
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Untitled
Abstract: No abstract text available
Text: C3082L REV A Product Description CEP7 0.83:1 ADSL DMT CO Line Transformer Meets requirements of IEC60950 for basic insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3082L XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface
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C3082L
IEC60950
C3082L
016REF
100mVAC,
10KHz,
100mVAC.
100kHz,
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marking xt2 mmic
Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
Text: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
SXT-289
016REF
118REF
041REF
EDS-101157
marking xt2 mmic
MCH18
MCR03
267M3502104
Sirenza amplifier SOT-89
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267M3502104K
Abstract: 2425-C
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
267M3502104K
2425-C
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Xa3 TRANSISTOR
Abstract: matsuo
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
Xa3 TRANSISTOR
matsuo
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RF AMP marking c7 sot-89
Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
RF AMP marking c7 sot-89
marking 25 mmic sot-89
9C0603 ordering
Sirenza amplifier SOT-89 Marking
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
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C3200L
Abstract: CEP7
Text: C3200L Product Description REV B Texas Instruments AC6 Line Isolation Transformer 1.9:1 CEP7 Meets requirements of IEC60950 for supplementary insulation, 250V working voltage A Customer Terminal #1 Indicator COEV C3200L XXXXX [9.91 MAX] 0.390 MAX Coplanar with
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C3200L
IEC60950
C3200L
016REF
10kHz,
100mVAC,
100kHz,
100mVAC.
CEP7
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