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    TME 57

    Abstract: EDI8L32256C
    Text: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8L32256C m256Kx32 256Kx32 EDI8L32256C EDI8L32256C15AC* TME 57

    Untitled

    Abstract: No abstract text available
    Text: ED/8F1664Ç m x 64KXK SRAM Module ELECTRON IC D E SIG N INC. 64Kx16StaticRAM C M O S 'M x M e Features TTieEDI8F1664C is a high speed 64Kx16CM0S Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module


    OCR Scan     		PDF ED/8F1664Ç 64KXK 64Kx16S TTieEDI8F1664C 64Kx16CM0S 64Kx16 30through 32Kx8 TTie32Kx8RAMs astwobanksof32Kx16bits

    f2342

    Abstract: No abstract text available
    Text: m EDI7F342MV i 2Megx32 ElfCTlîûHlüDBIi5N5.IIMû 2Megx32 Flash Module The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Meg x 32 respectively. The modules are based on Intel’s 28F016B3-2Megx8 Flash device in TSOP packageswhich are mounted on an FR4


    OCR Scan     		PDF EDI7F342MV 2Megx32 2Megx32 EDI7F342MV 7F2342MV 28F016B3-2Megx8 150ns EDf7F342MV-BI\IC 2Megx3280pnStMM 28F01GB3 f2342

    256KX16

    Abstract: EDI8F16256C
    Text: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static


    OCR Scan     		PDF EDI8F16256C 256KX16 4096K-bit 512Kx8 1024Kx4 EDI8F16256C 256Kx4

    Untitled

    Abstract: No abstract text available
    Text: WSX EDI441024C afCTROMC 0E9GNSINC. 1Megx4 Fast Page DRAM 1Megabit x 4 Dynamic RAM 5V, Fast Page Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20


    OCR Scan     		PDF 100ns EDI441024C EDI441024C 015B1USA* ED144W24C

    Untitled

    Abstract: No abstract text available
    Text: WEDl EDI8F24128C 128Kx24 SRAM Module ELECTRONIC DE9GNS. « C . 128KX24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in SOJ packages


    OCR Scan     		PDF EDI8F24128C 128Kx24 EDI8F24128C 128Kx8 multi15 EDBF24128C

    Untitled

    Abstract: No abstract text available
    Text: EDI444096CA 4Megx4 EDO DRAM ELfCTROMC DESIGNS, N C 4 Megabit x 4 Dynamic RAM 5V, Extended Data Out The EDI444096CA is a high performance, low power CMOS F eatu res Dynamic RAM organized as 4 Megabit x 4. The EDI444096CA features EDO Mode operation which allows high speed random


    OCR Scan     		PDF EDI444096CA EDI444096CA addressbitswhichareentered11 015B1USA*

    ED188512CA17

    Abstract: EDI88512CA20N36B 2A153 ED188512CA
    Text: W D\ EDI88512CA 512Kx8 Static Ram ELÈCTRON« 0ESK3N& NC. 512Kx8Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Data Retention Function LP version


    OCR Scan     		PDF EDI88512CA 512Kx8 512Kx8Static EDI88512CA 15X/W 01581USA ED188512CA17 EDI88512CA20N36B 2A153 ED188512CA

    EDI8F82048C70BSC

    Abstract: EDI8F82048C OMA210
    Text: MSX EDI8F82048C 2 MegxS SRAM Module ELECTRONIC DESIGNS. M C 2Megabitsx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi-layered 2 Meg x 8 bit CMOS Static epoxy laminate FR4 substrate.


    OCR Scan     		PDF EDI8F82048C 100ns EDI8F82048LP) EDI8F82048C 128Kx8 EDI8F82048C70BSC EDI8F82048C70BSI. MA01581 OMA210

    Untitled

    Abstract: No abstract text available
    Text: ^ E D EDI88257C l 2S6Kx8 Static Ram ElECIROMC DESK5N& NC. 256Kx8 Static RAM CMOS, Module F e a tu r e s The EDI88257C is a 2 megabit Monolithic CMOS Static RAM. 256Kx8 bit CMOS Static The 32 pin DIP pinout adheres to the JEDEC standard forthe two Random Access Memory


    OCR Scan     		PDF EDI88257C 256Kx8 100ns EDI88257C EDI8M8257C. 512Kx8 EDI88512C. EDI88257CB

    tme 126

    Abstract: 64128C CZ 121 connector tme+126
    Text: ^ED I EDI8F64128C EL£CTCOn C d c s g n s . n e l 128Kx64 SRAM Module 128KX64 Static RAM Highspeed CMOS Cache Module Features 1MByte Secondary C ache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium B a se d System s


    OCR Scan     		PDF EDI8F64128C 128Kx64 EDI8F64128C EDI8F64128C15MDC EDI8F64128C20MDC EDI8F64128C25MDC 160Lead 015B1USA EDBF864120C tme 126 64128C CZ 121 connector tme+126