014400m
Abstract: No abstract text available
Text: 014400M IBM014400P 1M x 4 Low Power DRAM Features • 1,048,576 word by 4 bit organization • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V • 1024 Refresh Cycle Rate/128m s Low Power Dissipation - Active max - 85m A/70m A (5.0V) - 95m A/80m A (3.3V) - Standby (TTL Inputs) - 1 ,0mA (max)
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IBM014400M
IBM014400P
Rate/128m
110ns
130ns
J-26/20
300mil)
014400M
014400P
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0316809c
Abstract: No abstract text available
Text: Alphanumeric Index Part Num ber Type O rganization Features Page Num ber IBM011616 0. D R A M . 1M x 1 6 . 12/8, 5 .0 V . . 249 IBM0116160 B . . D R A M . 1M x 1 6 . 12/8, 3 .3 V . 249
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IBM011616
IBM0116160
IBM0116160M
IBM0116160P.
IBM011618
IBM0165800B.
0316169C
0316409C
0316809C
0316809c
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0118160B
Abstract: 0116165B 014400B 0117805 014400
Text: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343
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IBM0116160M
0116160P.
0116165B.
0116165M
0118160B
0116165B
014400B
0117805
014400
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Untitled
Abstract: No abstract text available
Text: IBM014400 014400M IBM014400B IBM014400P 1M X 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization Power Dissipation - Active max • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V - 85 mA / 70 mA (5.0V ) - 95 mA / 80 mA (3.3V) - Standby Current: T TL Inputs (max)
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IBM014400
IBM014400M
IBM014400B
IBM014400P
110ns
130ns
Fa00mil;
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