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    Amphenol Corporation ALBFLB3E180118J

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    OHRD1938

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode 950 nm GaAs Infrared Emitter (950 nm) F 0118J Wesentliche Merkmale Features 2 • • • • • Chip size 300 x 300 µm2 Very highly efficient GaAlAs LED High reliability High pulse handling capability Good spectral match to silicon


    Original     		0118J OHRD1938 PDF

    0118J

    Abstract: osram topled
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2


    Original     		0118J 0118J osram topled PDF

    GCOY6878

    Abstract: No abstract text available
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118J Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2


    Original     		0118J GCOY6878 PDF