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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAsMMIC> 00M077 37, • MGF7108A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION OUTLINE DRAWING MGF7108A is a GaAs monolithic microwave integrated circuits for Unit:millimeters use in 900MHz band power amplifiers. @ Va c FEATURES NU


    OCR Scan     		PDF 00M077 MGF7108A MGF7108A 900MHz 925MHz

    D41D2

    Abstract: No abstract text available
    Text: HARRIS SEMICON» SECTOR 5bE D • H3ÜB271 00M077S 272 H H A S File Number 2338 D 4 1 D S6TÍ68 1 = 3 3 -/ 7 1-Ampere Silicon P-N-P Power Transistors Complementary to the D40D Series TERMINAL DESIGNATIONS Features: High free-air power dissipation • Low collector saturation voltage I-0.5V typ. @ -1A Iq ,


    OCR Scan     		PDF 00M077S O-202AB D41D7, D41D-series GD40777 T-33-11 D41D2

    MMBTA56

    Abstract: MPSA56 PZTA56
    Text: MPSA56 1MMBTA561PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.


    OCR Scan     		PDF PZTA56 OT-223 D0M0774 MMBTA56 MPSA56 PZTA56