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    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU

    t10w10n

    Abstract: 31762-88 T15P5N
    Text: DC Capacitors DC Filtering/Power Supplies Type T Popular ratings for communications and industrial electrical/electronic equipm ent are available from stock. Type T capacitors are smaller than previous industrial types and/or their comparable military style.


    OCR Scan     		PDF T10P1N T10P25N T10P5N T10W1N T10W2N T10W4N T10W6N T10W8N 24400b0 00G4371 t10w10n 31762-88 T15P5N

    ns 4203

    Abstract: No abstract text available
    Text: IB M 1 1 M 1 6 4 0 L § € = ¥ ! ^ = -= 7 = 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 Wc i RAS Access Time 60ns 70ns tcAC i CAS Access Time 20ns 25ns


    OCR Scan     		PDF 1Mx64 130ns ns 4203