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    Pulse Electronics Corporation J00B7D21NL

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    TIPL763A

    Abstract: TIPL763
    Text: bS TE XA S IN S T R -COPTO} _ ' 896 17 26 TEXAS INSTR OPTO DE |flThl7ati 0 0 3 7 0 ^ — 62C 37069 D TIPL763, TIPL763A N-P-N SILICON POWER TRANSISTORS T~ OCTOBER 1982 - REVISED O CTOBER 1984 • Rugged Triple-Diffused Planar Construction •


    OCR Scan     		PDF TIPL763, TIPL763A IPL763 TIPL763A O-218AA 0D37D7t, TIPL763

    Untitled

    Abstract: No abstract text available
    Text: nZ Z S G S ‘ T H O M S O N " * 7 i, 5M0 g[MIILICT«fl[](S ESM 765PI-600/800 FAST RECOVERY RECTIFIER DIODES • HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND Irm AT 100 °C UNDER USERS CONDITIONS


    OCR Scan     		PDF 765PI-600/800 T0220AC 00b7D

    2n2222 texas instruments

    Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
    Text: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER


    OCR Scan     		PDF TIPL757, TIPL757A TIPL757 TIPL757A TIPL760, TIPL760A TIPL761 2n2222 texas instruments BY206 n-p-n r.f. power transistors npn 1000V 15A D037D