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    Infineon Technologies AG ISC009N03LF2SATMA1

    ISC009N03LF2SATMA1
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    DigiKey ISC009N03LF2SATMA1 Cut Tape 4,390 1
    • 1 $1.34
    • 10 $0.978
    • 100 $0.7852
    • 1000 $0.6841
    • 10000 $0.65888
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    ISC009N03LF2SATMA1 Digi-Reel 4,390 1
    • 1 $1.34
    • 10 $0.978
    • 100 $0.7852
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    • 10000 $0.65888
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    ISC009N03LF2SATMA1 Reel 5,000
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    Avnet Americas ISC009N03LF2SATMA1 Reel 18 Weeks 5,000
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    Mouser Electronics ISC009N03LF2SATMA1
    • 1 $1.68
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    • 1000 $0.652
    • 10000 $0.594
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    Newark ISC009N03LF2SATMA1 Cut Tape 1
    • 1 $1.75
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    • 1000 $0.76
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    EBV Elektronik ISC009N03LF2SATMA1 19 Weeks 5,000
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    Infineon Technologies AG IPB009N03LGATMA1

    MOSFET N-CH 30V 180A TO263-7
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    IPB009N03LGATMA1 Digi-Reel 1
    • 1 $3.36
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    Rochester Electronics IPB009N03LGATMA1 13 1
    • 1 $1.74
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    • 100 $1.64
    • 1000 $1.48
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    EBV Elektronik IPB009N03LGATMA1 143 Weeks 1,000
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    Vyrian IPB009N03LGATMA1 13
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    Cyg Wayon Circuit Protection Co Ltd WMB009N03LG4

    Transistor: N-MOSFET; unipolar; PDFN5060-8
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    TME WMB009N03LG4 96 1
    • 1 $0.919
    • 10 $0.868
    • 100 $0.713
    • 1000 $0.689
    • 10000 $0.619
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    009N03L Datasheets Context Search

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    009N03L

    Abstract: IPB009N03L G IPB009N03L JESD22
    Text: Type 009N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1 for target applications 30 V R DS on),max 0.95 mΩ ID 180 A • N-channel • Logic level


    Original     		IPB009N03L PG-TO263-7 009N03L 009N03L IPB009N03L G JESD22 PDF

    009N03L

    Abstract: IPB009N03L JESD22
    Text: Type 009N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1 for target applications 30 V R DS on),max 0.95 mΩ ID 180 A • N-channel • Logic level


    Original     		IPB009N03L PG-TO263-7 009N03L 009N03L JESD22 PDF

    009N03L

    Abstract: IPB009N03L JESD22
    Text: Type 009N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1 for target applications 30 V R DS on),max 0.95 mΩ ID 180 A • N-channel • Logic level


    Original     		IPB009N03L PG-TO263-7 009N03L 009N03L JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 009N03L G OptiMOS 3 Power-Transistor Product Summary Features VDS • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1 for target applications 30 V RDS on),max 0.95 mW ID 180 A • N-channel • Logic level • Ultra-low on-resistance R DS(on)


    Original     		IPB009N03L PG-TO263-7 009N03L PDF