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    Part ECAD Model Manufacturer Description Download Buy
    SF-100GLB0W00-5DB Amphenol Cables on Demand Amphenol SF-100GLB0W00-5DB QSFP 100G Loopback Adapter Module for QSFP28 Port Testing - 5dB Attenuation & 0W Power Consumption [100-Gigabit Ethernet Ready] Datasheet
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    Sullins Connector Solutions PREC005DBAN-M71RC

    CONN HEADER R/A 10POS 2.54MM
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    DigiKey PREC005DBAN-M71RC Bag 5,497 1
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    Anytek Technology Corporation Ltd AMT0440005DB0000G

    SCREW TERMINALBRACKETM4 4 PIN DI
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    DigiKey AMT0440005DB0000G Box 4,244 1
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    TME AMT0440005DB0000G 4,400 10
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    Sullins Connector Solutions PRPC005DBAN-M71RC

    CONN HEADER R/A 10POS 2.54MM
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    DigiKey PRPC005DBAN-M71RC Bag 2,350 1
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    Tripp Lite U209-005-DB25

    ADAPTER USB TO SERIAL 5 FEET
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    DigiKey U209-005-DB25 Bulk 623 1
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    Mouser Electronics U209-005-DB25
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    NAC U209-005-DB25 1
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    Master Electronics U209-005-DB25 1
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    TAW Electronics, Inc. SNFPT021005DB5JS00

    SNUBBER FKP 0.01 UF 1600 VDC 7X1
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    DigiKey SNFPT021005DB5JS00 Bulk 552 1
    • 1 $7.82
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    • 1000 $5.931
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    005DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    precision Sine 1khz Wave Generator

    Abstract: audio preamp CLASS A AUDIO TONE CONTROL IC precision Sine Wave Generator AN144 X9241 X9241A X9408 X9C102 Global Specialties
    Text: Audio Xcellence: XDCP Signal Integrity Report Audio Characterization Report Application Note Introduction Most audio equipment testing is done on a stimulusresponse basis. A signal of known characteristics is fed to the input of the Device Under Test (DUT) and the output of


    Original
    PDF X9408, X9421 X9C102/103/104/503 AN144 precision Sine 1khz Wave Generator audio preamp CLASS A AUDIO TONE CONTROL IC precision Sine Wave Generator X9241 X9241A X9408 X9C102 Global Specialties

    three relay stabilizer circuit diagram

    Abstract: RK 411 RXKL 1 RXIG 22 RHGX rxig 21 rxig 28 generators winding circuit diagrams RXIG 2 RK411
    Text: Overcurrent relay and protection RXIG 2 and RAIG 1MRK 509 010-BEN Page 1 Issued December 1999 Changed since July 1998 Data subject to change without notice SE970176 Features • Single-, two- and three-phase versions for short-circuit and earth fault protection


    Original
    PDF 010-BEN SE970176) SE970889) 004-AB 315-B 315-C 015-BEN 016-BEN 018-BEN three relay stabilizer circuit diagram RK 411 RXKL 1 RXIG 22 RHGX rxig 21 rxig 28 generators winding circuit diagrams RXIG 2 RK411

    Untitled

    Abstract: No abstract text available
    Text: Temperature Variable Chip Attenuators TCAF N05 Series: DC-12GHz f\E R O FLE X Designed to vary -,005dB /dB /°C to compensate A p assion fo r p erfo rm a n ce. for temperature induced system gain variation without requiring a bias or control voltage. 3N5 These surface m ount attenuators consist o f


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    PDF DC-12GHz 005dB 12GHz TCAF-T3-N05

    Untitled

    Abstract: No abstract text available
    Text: PM* PRELIMINARY S/UNI-QUAD DATASHEET PMC-971239 PMC-Sierra, Inc. ISSUE 5 „ „ „ „ „ PM5349 S/UNI-QUAD SATURN USER NETWORK INTERFACE 155-QUAD PM5349 S/UNI-QUAD SATURN USER NETWORK INTERFACE (155-QUAD) DATASHEET PRELIMINARY ISSUE 5: JANUARY 1999 PMC-Sierra, inc.


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    PDF PMC-971239 PM5349 155-QUAD) PM5349 DD20LQ5

    TLE4216 G

    Abstract: No abstract text available
    Text: tDE D I fl235bOS OOSObMl Tb2 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Intelligent Sixfold Low-Side Switch TLE 4216 Features • Double low-side switch, 2 x 0.5A • Quad low-side switch, 4 x 50 mA • Power limitation • Open-collector outputs • Overtemperature shutdown


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    PDF fl235bOS 0TLE4216 Q67000-A8237 P-DIP-20-1 Q67000-A9108 P-DSO-24-1 fl235b05 AED00916 AED0D724 AED00725 TLE4216 G

    BUK637-400A

    Abstract: BUK637-400B in 4008 diode LP250 00a0B
    Text: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly


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    PDF BUK637-400A BUK637-400B T-31-IS- BUK637 -400A -400B in 4008 diode LP250 00a0B

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 2M 256K X 8/128K X 16 MBM29F200TA/MBM29F200BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs


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    PDF 8/128K MBM29F200TA/MBM29F200BA 48-pin 44-pin DF42S DF82S DF83S