Untitled
Abstract: No abstract text available
Text: 7 ^2 *1 2 37 ¿57 004b274 434 • S G T H _ SGS-THOMSON H ¥^ ô «S STP5N60 STP5N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N60 STP5N60FI ■ . ■ ■ ■ V dss RDS(on) Id 600 V 600 V < 1.6 Í Í < 1.6 Si 5.6 A
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004b274
STP5N60
STP5N60FI
004b2fl0
STP5N60/FI
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ta309
Abstract: MSA094 LV2931E50S Broadband emitter nm LED
Text: " 1 ^ 3 3 - O R LV2931E50S \ ShE T> PHILIPS INT ERNATIONAL • ?110fiSb DD4b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR N PN silicon planar microwave power transistor intended for use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GH z frequency range.
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33-OR
LV2931E50S
DD4b27M
711002b
Q04b277
T-33-09
00Mb27Ã
june1992
ta309
MSA094
LV2931E50S
Broadband emitter nm LED
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Untitled
Abstract: No abstract text available
Text: - P 3 3 - o q LV2931E50S \ ShE T> • PHILIPS INTERNATIONAL 71106Sb Q04b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended fo r use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GHz frequency range.
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LV2931E50S
71106Sb
Q04b274
T-33-09
711005b
004b277
MSA09S
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