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    transistor BD 263

    Abstract: No abstract text available
    Text: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in


    OCR Scan     		BFR29 003Sf bb53331 bb53T31 0035T03 transistor BD 263 PDF