Untitled
Abstract: No abstract text available
Text: P r o d u c t S p e c if ic a t io n < £ > 2 iL 0 5 Z16C30 CMOS USC UNIVERSAL S e r ia l co ntro ller FEATURES • Transparent Bisync M ode with EBCDIC or ASCII C h a ra c te r C o d e ; A u to m a tic C R C H a n d lin g ; Program mable Idle Line Condition; O ptional Preamble
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Z16C30
16-Bit
32-BitÃ
Z16C30
68-Pin
Z16C3010VSC
16C30
Z16C30,
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Untitled
Abstract: No abstract text available
Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357C Z Rev. 3.0 May. 20,1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organize as 32768-word x 8-bit. They have realized high speed, low power consumption and high reliability by
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HN58V256A
HN58V257A
32768-word
ADE-203-357C
64-byte
441b203
003442b
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KM44C4000BS
Abstract: KM44C4000BS 6 KM44C4000B
Text: KM44C4000BS ELECTRONICS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4000B
consumpt47
KM44C4000BS
7Sb4145
003442b
KM44C4000BS
KM44C4000BS 6
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B0648
Abstract: B0648F 652f BD643F BD644F BD645F BD647F BD649F BD651F BD652F
Text: BD644F; 646F B0648F; 650F BD652F SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA
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BD644F;
B0648F;
BD652F
BD643F,
BD645F,
BD647F,
BD649F
BD651F.
BD644F
B0648
B0648F
652f
BD643F
BD645F
BD647F
BD651F
BD652F
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