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    TSD4M350V

    Abstract: T397 TSD4M350F IRFP350 L072A
    Text: 3QE T> m 7^5^537 00305b5_l • SGS-THOMSON i L[iOT(s*S s g N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON TY P E V d ss RDS(on Id TS D 4M 350F /V 400 V 0.075 n 50 A . . . ■ ■ . « . TSD4M350F TSD4M350V HIGH CURRENT POWER MOS MODULE


    OCR Scan     		PDF TSD4M350F TSD4M350V TSD4M350F/V IRFP350 TSD4M350V t-91-20 O-240) T397 TSD4M350F L072A

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    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents


    OCR Scan     		PDF IRFE430 JANTX2N6802U JANTXV2N6802U MIL-PRF-19500/557] 500Volt, 46SS452