Untitled
Abstract: No abstract text available
Text: TOSHIBA ^0^7 240 002flE?75 37ñ TC51V4265DFTS60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4265D FTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4265DFTS uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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002flE
TC51V4265DFTS60/70
TheTC51V4265D
TheTC51V4265DFTS
TC51V4265DFTS
TC51V4265DFTS-60/70
DR04061194
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Untitled
Abstract: No abstract text available
Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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002flT33
BLV20
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bSE D • L.b53R31 002fllRfl S23 « A P X Objectivespecification Philips Semiconductors NPN general purpose transistor 2PC4081 FE A T U R E S • S-mini package • Low output capacitance, C 0b = 2 p F typ. . DESCRIPTION NPN transistor in a plastic three lead
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b53R31
002fllRfl
2PC4081
2PC4081Q
2PC4081R
2PC4081S
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile
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bbS3R31
002flflb2
BLU60/28
BLU60/28
OT119)
bbS3T31
nt44i
MCA440
MCA439
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
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bb53R31
002flbi1fl
BU2522AF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
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bbS3R31
002fl37b
BU2520D
bbS3T31
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transistor 2n3053
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA
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002fll3b
2N30b3
transistor 2n3053
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features
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002flflS4
BLU60/12
OT-119
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BU724A
Abstract: No abstract text available
Text: i i N AMER PHILIPS/DISCRETE APX bbS3^31 002fl307 24? blE » BU724A y v SILICON DIFFUSED POWER TRANSISTORS M onolithic high-voltage npn Darlington transistors w ith integrated speed-up diode in a SOT82 envelope, intended fo r fast switching applications such as small m otor control and switch-mode power supplies
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002fl307
BU724A
bb53T31
D026311
BU724A
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D • bb53^31 IAPX 002flDD3 M PS6520 MPS6521 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types areMPS6522 and MPS6523.
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002flDD3
PS6520
MPS6521
areMPS6522
MPS6523.
MPS6520
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Untitled
Abstract: No abstract text available
Text: m CiDC1724ñ 002fl47D bSfl m - TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description T h e T H M 3 6 1 0 B 0 A S /A S G is a 1 ,0 4 8 ,5 7 6 w o rd s b y 3 6 bits dyn a m ic R A M m o d u le w h ic h a sse m bled 2 p c s o f T C 5 1 1 8 1 8 0 A J
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-------------iD12Ã
THM3610B0AS/ASG-60/70
DM04030494
THM361OBOAS/ASG-60/70
THM3610B0AS/ASG
3610B0AS/ASG
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Untitled
Abstract: No abstract text available
Text: i i N AMER PHILIPS/DISCRETE b'lE D 002flQMb EMM • APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope primarily intended for linear and switching applications. P-N-P complement is PN2907/2907A.
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002flQMb
PN2222
PN2222A
PN2907/2907A.
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lem HA
Abstract: transistor bu2520d BU2520D
Text: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
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002037b
BU2520D
lem HA
transistor bu2520d
BU2520D
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Am27C512s
Abstract: AM27C512-155
Text: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current
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Q25752Ã
Am27C512
512K-bit,
CDV028
T-46-13-29
T-46-13-25
G2S75SÃ
CLV032
Am27C512s
AM27C512-155
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P2QFP100-GH-1420
Abstract: IR 1838 3v with 3 pins
Text: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with
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DS4375-2
CLA90000
144-ACB-4040
208-ACB-4545
209-ACB-4545
84-ACB-2828
P2QFP100-GH-1420
IR 1838 3v with 3 pins
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP87CM71/N71/P71 UNDER DEVELOPMENT CMOS 8-BIT MICROCONTROLLER TMP87CM71F, TMP87CN71F, TMP87CP71F The 87CM71/N71/P71 are the high speed and high perform ance 8-bit single chip m icrocomputers. These MCU contain 6-bit A/D conversion inputs and a VFT Vacuum Fluorescent Tube driver on a chip.
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TMP87CM71/N71/P71
TMP87CM71F,
TMP87CN71F,
TMP87CP71F
87CM71/N71/P71
TMP87CM71F
TMP87CN71F
QFP80
TMP87PP71F
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Untitled
Abstract: No abstract text available
Text: * J7313L.S DD2SS77 352 HI Or, Call C u sto m Service al 1-800-548-6132 USA Only BURR-BROWN 0 INA120 i m Precision INSTRUMENTATION AMPLIFIER o CM < z FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 25|iV max • LOW OFFSET VOLTAGE DRIFT: 0.25|xV/°C max • PIN-STRAPPED GAINS: 1, 10, 100, 1000
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J7313L
DD2SS77
INA120
30ppm/Â
106dB
INA120
17313LS
005flEA5
100ft}
17313bS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RDR724Ö 002ñfl40 544 TC551001BPL/BFL/BFTL/BTRL-70/85 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low
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RDR724Ã
TC551001BPL/BFL/BFTL/BTRL-70/85
TC551001BPL
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Untitled
Abstract: No abstract text available
Text: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin
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HB56T433D
304-word
32-bit
ADE-203Rev.
5117400BTS/BLTS)
72-pin
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PDF
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DK24
Abstract: No abstract text available
Text: 7 Ê . GEC P L E S S E Y o c t o b e r i 995 SEMI CO NDUC TOR S DS4268-2.2 DK24.FC FAST SWITCHING THYRISTOR KEY PARAMETERS 2000V DRM 260A ^T RMS 4000A ^TSM 200V/|iS dVdt 500A/J1S dl/dt 50)iS t. APPLICATIONS • High Power Inverters And Choppers. ■ UPS.
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DS4268-2
00A/J1S
20kHz.
DK2418FC
DK24
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data
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TC59R1809VK/HK
TheTC59R1809VK/HK
500MB/S.
TC59R1809VK/HK
32-pin
RD18011195
SVP32-P-1125A)
SHP36-P-1125)
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PDF
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REF05
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only BURR-BROWN <• REF05 +5V Precision VOLTAGE REFERENCE (Guaranteed Long-Term Stability) FEATURES • OUTPUT VOLTAGE: +5V ±0.1% max • GUARANTEED LONG-TERM STABILITY: 25ppm/1000 hrs max • EXCELLENT TEMPERATURE STABILITY:
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REF05
25ppm/1000
10fiVp-p
40VDC
REF05
150mV
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74LS04C
Abstract: gd5f 80515K m8ab
Text: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports
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fl23Sfci
80515K
16-bit
53SbD5
SAB80515K
2-12MHZ
74LS04
i10pF
74LS04C
gd5f
m8ab
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4BC20FD
O-22QAB
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