tc51864
Abstract: No abstract text available
Text: TOSHIBA T C 5 1 8 6 4 P L /F L S 5 /1 0 PRELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The
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TC51864PL
TC51864PL/FL-85/10
002b4Ã
tc51864
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Untitled
Abstract: No abstract text available
Text: M ITSU B ISH I <D IG IT A L ASSP> M 66240P/FP 4-CH 16-B IT PW M GENERATOR DESCRIPTION The M66240 is a programmable channel PWM generator PIN CONFIGURATION TOP VIEW produced using the silicon gate C M O S process. The M66240 can connect directly to the MPU data bus and
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66240P/FP
M66240
16-bit
50kHz
16t-is.
b2infl25
0G253bD
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BY448
Abstract: BY440 BY458 Philips diode tFR
Text: N AMER PHI LIPS/DISCRETE bTE D • bbSB^Bl QG2bM75 TTM BY448 BY458 IAPX PARALLEL EFFICIENCY DIODES Double-diffused passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, intended fo r use as efficiency diodes in transistorized horizontal deflection circuits and PPS power-pack system
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bbS3131
QG2bM75
BY448
BY458
BY458
BY448
OD-57.
002b4fll
BY440
Philips diode tFR
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QP803SL
Abstract: 44t transistor QP804SL
Text: 0 . OPTEK P roduct B ulletin OP 8 OOSL June 1996 NPN Silicon Phototransistors Types OP8OOSL, QP801SL, OP8Q2SL, QP803SL, QP804SL, OP8Q5SL Features • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range TO-18 hermetically sealed package
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QP801SL,
QP803SL,
QP804SL,
OP130
OP231
56SflO
002b4fl
QP803SL
44t transistor
QP804SL
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BY448
Abstract: BY458 af446
Text: b*lE D N AMER PHILIPS/DISCRETE • ^53131 0021,475 TTM IAPX BY448 BY458 PARALLEL EFFICIENCY DIODES D ouble-diffused passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, intended fo r use as e ffic ie n c y diodes in transistorized h o rizo n ta l d e fle ctio n c irc u its and PPS power-pack system
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a02bM7S
BY448
BY458
BY458
BY448
OD-57.
af446
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Untitled
Abstract: No abstract text available
Text: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM -FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts ±10% Power Supply ■ Easy Memory Expansion Using ÜÊ, CE2 and
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P4C1024
P4C1024
576-bit
128Kx8.
-15P3C
-17P3C
-15J3C
-17J3C
-15J4C
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Untitled
Abstract: No abstract text available
Text: International K Rectifier PD 9.1096A IRF7104 PRELIMINARY HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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IRF7104
applicatio50
554S2
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