MAPR-002729-170M00
Abstract: No abstract text available
Text: RoHS Compliant MAPR-002729-170M00 Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100µsec, 170W Preliminary 1/2007 Features OUTLINE DRAWING 190W, 53% efficiency, typical RF performance 36V, 24W nominal RF input drive Designed for ATC radar applications NPN silicon microwave power transistor
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MAPR-002729-170M00
MAPR-002729-170M00
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Untitled
Abstract: No abstract text available
Text: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macom.com PRESS RELEASE MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size
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MAPG-002729-350L00,
MAMG-002735-085L0L,
MAMG-002735-030L0L,
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Radar pallet
Abstract: MAPP-002729-300M00 radar amplifier s-band 2.7 2.9 GHZ
Text: MAPP-002729-300M00 Radar Pulsed Power Pallet 300W, 2.7-2.9 GHz M/A-COM Products Released Outline Drawing Features • • • • • • • Input and output matched to 50Ω 350W, 46% efficiency; typical RF performance 36VCC, 44W nominal input RF drive level
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MAPP-002729-300M00
36VCC,
1x106
MAPP-002729-300M00
Radar pallet
radar amplifier s-band 2.7 2.9 GHZ
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Untitled
Abstract: No abstract text available
Text: MAPR-002729-170M00 Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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MAPR-002729-170M00
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MAPR-002729-170M00
Abstract: No abstract text available
Text: MAPR-002729-170M00 Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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MAPR-002729-170M00
MAPR-002729-170M00
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Untitled
Abstract: No abstract text available
Text: September 30, 2014 MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size 85 Wpk GaN Hybrid Amplifier, MAMG-002735-085L0L, offers integrated, fully matched SMT solution
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MAPG-002729-350L00,
MAMG-002735-085L0L,
MAMG-002735-030L0L,
com/multimedia/home/20140930005146/en/
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3ZX1012-0RT03-1AA1
Abstract: 3RT1036 3RT1035 3rt1034 3RT1936-4EA2 3RT13 3RT-1035 3RT-1034 3rh1921-1 siemens sirius 3r
Text: SIRIUS 3R Schütz 3RT1.3 Contactor Contacteur EN 60947, IEC 947 Montageanleitung/Assembly Instructions Bestell-Nr./Order No.: 3ZX1012-0RT03-1AA1 2 RT-00272 3RT19.6-1. 1 RT-00285 2 2 1 RT-00286 1 2 1 1 1 2 3RH1921-2. RT-00273 3RH1921-1. 1 2 1 3 2 RT-00275
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3ZX1012-0RT03-1AA1
RT-00272
3RT19
RT-00285
RT-00286
3RH1921-2.
RT-00273
3RH1921-1.
RT-00275
RT-00274
3ZX1012-0RT03-1AA1
3RT1036
3RT1035
3rt1034
3RT1936-4EA2
3RT13
3RT-1035
3RT-1034
3rh1921-1
siemens sirius 3r
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radar amplifier s-band 2.7 2.9 GHZ
Abstract: MAPP-002729-300M00
Text: MAPP-002729-300M00 Radar Pulsed Power Pallet 300Wpk, 2.7-2.9GHz, 100µS Pulse, 10% Duty Preliminary DS2007-01-03 Features • • • • • • • Outline Drawing Input and output matched to 50Ω 350W, 46% efficiency; typical RF performance 36VCC, 44W nominal input RF drive level
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MAPP-002729-300M00
300Wpk,
DS2007-01-03
36VCC,
1x106
MAPP-002729-300M00
radar amplifier s-band 2.7 2.9 GHZ
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Untitled
Abstract: No abstract text available
Text: MAPP-002729-300M00 Radar Pulsed Power Pallet 300W, 2.7-2.9 GHz M/A-COM Products Released Outline Drawing Features • • • • • • • Input and output matched to 50Ω 350W, 46% efficiency; typical RF performance 36VCC, 44W nominal input RF drive level
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MAPP-002729-300M00
36VCC,
1x106
MAPP-002729-300M00
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transistor s0014
Abstract: S0014
Text: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong
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fl23SbOS
00272flb
CATH00E
transistor s0014
S0014
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 1 9 7 92 Optoelectronic Specifications- 37E D HARRIS SENICOND SECTOR • 4302271 00272S4 HAS b T W //.7 3 1mm Aperture Photon Coupled Interrupter Module H 22A 4,H 22A 5,H 22A 6" T he G E Solid S tate H22A Interru p ter M odule is a gallium arse
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00272S4
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Untitled
Abstract: No abstract text available
Text: 3875081 01E G E S O L I D STATE 19820 Optoelectronic S pecifications_ H A R R IS S E fllC O N D SECTOR 37E D • 43Q2571 00272ÖH 0 ■ T- V/- 8 3 Photon Coupled Isolator CNX35, CNX36 G a As Infrared Emitting Diode & N PN Silicon Photo-Transistor
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43Q2571
CNX35,
CNX36
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode
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43GE571
CQX14,
CQX15,
CQX16,
CQX17
92CS-42662
92CS-429S1
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H11M2
Abstract: No abstract text available
Text: 3875081 G E S O L I D STATE 0 1E 19750 Optoelectronic S p ecificatio n s- HARRI S SENI COND SECTOR 3 7E D • 4302271 0027212 1 Photon Coupled Isolator H11M1, H11M2 G a A1 As In frared E m itting D iode & Light A ctivated S C R The GE Solid State H U M l and H 11 M2 contain a gallium aluminum arsenide,
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H11M1,
H11M2
H11M2
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L ID 01E STATE 19 79 4 Optoelectronic Specifications _ H A RR IS SEMICOND SECTOR 37E T -4 1 -7 3 D 4302271 002725b 1mm Aperture Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3 T he G E Solid S tate H22B In terru p ter M odule is a gallium arse
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002725b
H22B1
H22B2
H22B3
S-42662
92CS-429S1
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IR TRANSISTOR
Abstract: Optocoupler 601 din 40040 humidity 601 optocoupler 6014 transistor T-41-83 sfh 601 Z6 DIODE MIL202E SFH601
Text: SIEMENS AKTIENGESELLSCHAF 47E D • Ö235b05 S IE M E N S 00272Ô2 1 «SIEG SFH601 SERIES PHOTOTRANSISTOR OPTOCOUPLER Maximum Ratings FEATURES • Highest Quality Premium Device • Built to Conform to VDE Requirements • Long Term Stability • High Current Transfer Ratios, 4 Groups
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fl235b05
00E7E62
SFH601
E52744
-X001
IR TRANSISTOR
Optocoupler 601
din 40040 humidity
601 optocoupler
6014 transistor
T-41-83
sfh 601
Z6 DIODE
MIL202E
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B550 transistor
Abstract: diode 606 transistor r 606 j optocouple VF125 Not3
Text: SIEMENS AKTIEN6ESELLSCHAF 47E J> • S IEM EN S fl23Sb05 00272<ÏD fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%
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235b05
B550 transistor
diode 606
transistor r 606 j
optocouple
VF125
Not3
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BT148W Series
Abstract: 500R 600R BT148W BT148W-400R
Text: N AUER PHILIPS/ DISCRETE L^E D • bbSBTai 0027204 T22 H A P X I BT148W SERIES V THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting.
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GD27PfiM
BT148W
OT-223
BT148W-400R
OT-223
BT148W Series
500R
600R
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Untitled
Abstract: No abstract text available
Text: ADV MICRO P LA /P L E / A R R A Y S Ifc Ï Ë J OS57Säfa 0027211. T - 4 6 - 13- 47 M e g a P A L D e v i c e P A L 3 2 R 1 6 Features/Benefits Ordering information • High-denslty 40-pin architecture • Product term steering allows up to 16 product terms
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OS57S
40-pin
PAL32R16
PAL32R16
T-46-13-47
32R16
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T31 0027207 47T M A P X b^E D BT137F SERIES J V FULL-PACK TRIACS Glass-passivated 8 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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bbS3T31
BT137F
OT-186
BT137Fâ
M2425
002721b
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Untitled
Abstract: No abstract text available
Text: THIS DRAWI NG IS COPYRIGHT UNPUBLI S HED. - RELEASED BY TYCO ELECTRONICS CO RPORATION. FOR ALL PUBLI CATI ON RIGHTS REV I S I O N S RESERVED. DESCRIPTION EH I 0 - 0 4 7 8 - 0 4 ECR-07-002721 SECTI A A A-A SCALE I : I SMART READER : AND SWITCH CONTACTS A A
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ECR-07-002721
3IMAR2000
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diodo A6
Abstract: PJ 63 MM diode Wf VQE 23 F wf vqe 24 d DIODO LED ir wf vqe 24 f WF vqe 24 e WF VQE 23 E din 40040 humidity WF VQE 22 d
Text: SIEMENS AKTIEN6ESELLSCHAF ^7E D • fl235bOS 00272flb b « S I E G S IE M E N S SFH 601G SERIES PHOTOTRANSISTOR OPTOCOUPLER 63 Package Dimensions in Inches mm 807(7.81 29\ (7.4) J p o ti) E E E a 3 7 ] BASE AN00C E ^ CATH00E E 3 NC E COLLECTOR ■<d J^EMITTï B
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fl23SbOS
601G-1,
601G-2
601G-3
601G-4
E52744
-X001
diodo A6
PJ 63 MM diode
Wf VQE 23 F
wf vqe 24 d
DIODO LED ir
wf vqe 24 f
WF vqe 24 e
WF VQE 23 E
din 40040 humidity
WF VQE 22 d
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Untitled
Abstract: No abstract text available
Text: bbS3T31 0027264 T22 bTE D N AUER PHILIPS/DISCRETE ^ APX BT148W SERIES J THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable for surface mounting. They are intended for general purpose switching and phase-control applications.
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bbS3T31
BT148W
OT-223
BT148W-400R
OT-223
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E T> m bb£>3^31 00272S3 3SR «APX BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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00272S3
BT139F
OT-186
BT139Fâ
bb53T31
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