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    BUK637-400A

    Abstract: BUK637-400B in 4008 diode LP250 00a0B
    Text: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly


    OCR Scan     		PDF BUK637-400A BUK637-400B T-31-IS- BUK637 -400A -400B in 4008 diode LP250 00a0B

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY 8M 1M x 8/512K x 16 IlilgfctllM Ni MBM29F800T/MBM29F800B • DISTINCTIVE CHARACTERISTICS • Sing le 5.0 V read, write, and erase Minimizes system level power requirements • Com patible with JED EC -standard com m ands Uses same software commands as E2PROMs


    OCR Scan     		PDF 8/512K MBM29F800T/MBM29F800B 48-pin 44-pin 30S-1G-1 5Q1098Ã ITDF42S194 403-C2 002D71Ã