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    SEP8526

    Abstract: sep8526-002 diode honeywell
    Text: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF 001bb7S SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 0Dlbb77 SDP8426 sep8526-002 diode honeywell

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


    OCR Scan     		PDF AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

    FT5763M

    Abstract: FT5763 FT5766M Fujitsu Silicon Darlington Transistor Array T-43-25
    Text: 31E D FUJITSU MICROEL ECT RONICS Q 374=57^2 QQlbb74 b Q F M I January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- FT5763M, FT5766M Silicon Darlington Transistor Array FT 5763M , F T 5766M A B SO LU T E M A X IM U M R A T IN G S Rating Ta = 25°C Storage Temperature


    OCR Scan     		PDF 001bb74 FT5763M, FT5766M FT5766M 374cJ7b2 001bb7S T-43-25 FT5763M FT5763 Fujitsu Silicon Darlington Transistor Array T-43-25