MPSa13 equivalent
Abstract: mpsa13 MPSa14 equivalent mpsa14
Text: MSE D • =50^7250 0017flbb 1 ITOSM TOSHIBA DARLINGTON TRANSISTOR MPSA13,14 SILICON NPN EPITAXIAL TYPE PCT PROCESS TOS HIB A (DISCRETE/OPTO) FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE Unit in mm APPLICATIONS. FEATURE: High DC Current Gain @ Ic=100mA MPSA13
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0017flbb
MPSA13
MPSA14
100mA
Ta-25
MPS-A13)
MPS-A14)
100mA
MPSa13 equivalent
MPSa14 equivalent
mpsa14
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <LINEAR ICs> M5231TL VARIABLE OUTPUT VOLTAGE REGULATOR DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M 5 2 3 1 T L is a sem iconductor integrated circuit which is de sig ned for variable output voltage regulator and is housed in a small 5 -p in SIP.
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5231T
M5231TL
2SA1283
24TflELi
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301767
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1664 A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The MSM511664A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.
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536-Word
16-Bit
MSM511664A/AL
16-bit.
cycles/32ms
b724240
301767
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Untitled
Abstract: No abstract text available
Text: mm TECHNOLOGY LT1207 D u al 250m A/60M H z C u rre n t F e e d b a c k A m p lifie r F€ATUR€S DCSCRIPTIOn • 250mA Minimum Output Drive Current The LT 1207 is a dual version of the LT1206 high speed ■ 60MHz Bandwidth, Av = 2, R|_ = 100£2 ■ 900V/jaS Slew Rate, Av = 2, RL = 50Q
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LT1207
250mA
LT1206
60MHz
00V/jaS
LT1206,
00V/fas
LT1207
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Untitled
Abstract: No abstract text available
Text: _LT1352/LT1353 Dual and Q uad 250jjA 3MH z, 200V/fis O p eratio nal Am plifiers D€SCMPTIOn FCflTURCS • 3MHz Gain Bandwidth ■ 200V/ns Slew Rate ■ 250|aA Supply Current per Amplifier ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable
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LT1352/LT1353
250jjA
00V/fis
00V/ns
14nV/Vflz
700ns
152mm)
254mm)
16-Lead
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