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    Abstract: No abstract text available
    Text: N APIER PHILIPS/DISCRETE DbE D PowerMOS transistor • bLSaiBl QQ14fl01 5 ■ BUZ307 t -s t -u May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF QQ14fl01 BUZ307 T0218AA; T-39-11 0014fl0b bfciS3T31 BU2307