Contextual Info: HA R R IS SEMICOND SECTOR fs i H a ILE » • 4 3 G S 5 7 1 ■Ìoi47TS 2 ■ 8 G r r i s 8 6 / 8 ' june 1989 8 3 T -4 9 -1 7 -1 5 C M O S 1 6 Bit M ic ro p ro ce s so r Features Description • T h is C ir c u it Is P ro c e s s e d in A c c o r d a n c e to M il- S t d -

LT120A

Contextual Info: Hall Device LT170A LT170A • Features ■ Applications Vertical Type GaAs Hall IC for Radial Type Motor under development (Unit : mm) Outline Dimensions • Suitable for radial type motor due to vertical type package max. 3 times no-load Hall voltage compared with

buz41a

Contextual Info: PowerMOS transistor_ BUZ41A N AMER PHILIPS/DISCRETE OLE D • _ b b S B ' m 00144^3 T ■ T-n-l/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: HARRIS SENICOND S E CT OR 33 HARRIS IbE D • 43 052 71 Q 0 1 4 T 4 0 S ■ 82C 59A /883 T ^ r a - 3 3 - i 3 CMOS Priority Interrupt Controller June 1989 P ino u ts F eatures 8 2 C 5 9 A /8 8 3 C ER A M IC DIP • This Circuit is Processed in Accordance to MII-Std-883C and is Fully

Contextual Info: HARRIS SEMICOND SECTOR IbE • 4302271 0014382 3 ■ 82C52/883 JäJ HARRIS - - * * D ‘ i- ' ‘ T ''2 S ''3 7 “ ö s r June 1989 CMOS Serial Controller Interface Pinouts Features 8 2 C 5 2 /8 8 3 C E R A M IC DIP • This C ircuit is Processed in Accordance to M il-S td -8 8 3 and is Fully

Contextual Info: bfiE D • 4ÛSS771 DOlMMTl 20T ■ 512K x 8 CMOS STATIC RAM MODULE IDT IDT7M4048 INTEGRATED DEVICE FEATURES: DESCRIPTION: • High-density 4 megabit C M O S Static R A M module T h e ID T 7 M 40 48 is a 4 megabit 5 1 2K x 8 C M O S Static R AM m odule constructed on a co-fired ceram ic substrate

HARRIS SEMICONDUCTOR 1553

Abstract: ic 74165 TD5 651 HD-15530 74165 pin of ic 74165 15530
Contextual Info: HARRIS ü j SEMICOND m a r SECTOR r i s lfcE D H D - • 1 4302271 5 5 QG1S113 3 / 8 T 8 - i s ■ 3 r - * 7 CMOS Manchester Encoder-Decoder June 1989 Pinouts Features • T h is C irc u it is P ro ce sse d in A c c o rd a n c e to M il-S td -8 8 3 and is Fully

Contextual Info: böE » • 4S2S771 00144*11 20T ■ 512Kx8 IDT IDT7M4048 CMOS STATIC RAM MODULE INTEGRATED DEVICE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit C M O S Static RA M module T h e ID T 7 M 4 0 4 8 is a 4 megabit 5 1 2K x 8 C M O S Static

LCC 18 Pin Package

Contextual Info: HARRIS SEMICOND SECTOR 1LE D • 4302271 0QlS04b 5 ■ £D HARRIS 82C288/883 T-S^-SS-oS June 1989 Bus Controller For 80C 286 Processors P inout Features • Compatible with NM O S 82288 20 PIN CERAMIC DIP TOP VIEW • Fully S tatic C M O S Design for Low Po w er Operation

Contextual Info: S G S-THOHSON 07C D | 7TSTE3? 0014MS3 43C 11 F I F O In p u t/ O u tp u l In t e r f a c e u n it Features • 128-byte FIFO buffer provides asynchronous bidirectional CPU/CPU or C PU /peripheral interface, expandable to any width in byte increm ents by use of m ultiple Z8060 FIO 's

Contextual Info: HARRIS SEMICOND SECTOR caj IbE D • 4302E71 'D O i m S T 1 ■ 8 2 C 8 2 / 8 8 3 harfris r- tfc - June 1989 07- u CMOS Octal Latching Bus Driver Pinouts Features 8 2 C 8 2 /8 8 3 CERAMIC DIP • This Circuit is Processed In Accordance to M II-Std-883 and is Fully