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    tc 97101

    Abstract: D472
    Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out


    OCR Scan     		PDF MT9LD272 MT18LD472 168-pin, 048-cycle T18LCW tc 97101 D472

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by


    OCR Scan     		PDF MT4D232 MT8D432 72-pin, 024-cycle 048-cycle P199S.

    B9535

    Abstract: 1M16
    Text: PRELIMINARY MT4LC1 M16H5 1 MEG x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • B urst order, interleave or linear, p ro gram m ed by executing W CBR cycle after initialization • Sin gle p o w er su p p ly : +3.3V ±5%


    OCR Scan     		PDF M16H5 024-cycle 44/50-Pin A7-A10 000xB B9535 1M16

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE jp il r p n M MT9LD272 B N , MT18LD472 B(N) 2, 4 MEG X 72 BURST EDO DRAM MODULES BURST EDO IDRAM MODULE 2, 4 MEG x 72 16,32 MEGABYTE, 3.3V,ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, d ual-in-line m em ory m odule (D IM M )


    OCR Scan     		PDF MT9LD272 MT18LD472 168-pin, 048-cycle T18LD

    WT6L

    Abstract: MT81D264
    Text: ADVANCE MT4LD T 164 B(N), MT8LD264 B(N), MT16LD464 B(N) 1, 2, 4 MEG x 64 RURST EDO DRAM MODULES p ilC R O N 1,2, 4 MEG x 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line m em ory module (DIMM)


    OCR Scan     		PDF MT8LD264 MT16LD464 168-pin, 024-cycle 048-cycle T16LD4WCBR 000xB MT8L0264B WT6L MT81D264

    T2D 53

    Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
    Text: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by


    OCR Scan     		PDF T4D232 T8D432 72-pin, 024-cycle 048-cycle 72-PiRON 000xB T2D 53 T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31

    MT4LC4M4G6

    Abstract: No abstract text available
    Text: PRELIMINARY MT4LC4M4G6 4 MEG x 4 BURST EDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, program m ed by executing WCBR cycle after initialization • Single pow er supply: +3.3V ±5% • All inputs a n d o u tp u ts are LVTTL com patible w ith 5V


    OCR Scan     		PDF 048-cycle 24/26-Pin MT4LC4M4G6

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M • ir S D N MT4 LD T 164 B(N ), MT8LD264 B(N ), MT16LD464 B(N ) 1 ,2 ,4 M EG X 64 B U R S T EDO DRAM M O D U LES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (D IM M )


    OCR Scan     		PDF MT8LD264 MT16LD464 168-Pin 168-pin, 024-cycle column-00 0D1310Ã

    MT4LC4M4G6

    Abstract: No abstract text available
    Text: PRELIMINARY MT4LC4IW4GS 4 M EG x4 BURSTEDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V


    OCR Scan     		PDF 048-cycle 26-Pin 000xBwhere MT4LC4M4G6

    m995

    Abstract: 8F4DJ-52
    Text: PRELIMINARY MT4LC2M8F4 2 MEG x 8 BURST EDO DRAM p ilC R C D N BURST EDO DRAM 2 MEG x 8 FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, program med by executing W CBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL com patible with 5V


    OCR Scan     		PDF 048-cycle 28-Pin 000xB m995 8F4DJ-52

    tc 97101

    Abstract: No abstract text available
    Text: ADVANCE MICRON I rtCHNCLOG * INC M714LD T 164 B(N), MT8LD264 B(N), MT16LD464 B(N) 1 , 2 , 4 MEG X 64 BURST EDO DRAM MODULES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES • 168-pin, dual-in-line m em ory m od u e (DIM M )


    OCR Scan     		PDF M714LD MT8LD264 MT16LD464 168-pin, 024-cycle 048-cycle 168-Pin 1125I tc 97101

    T41C

    Abstract: T41C-4M
    Text: PRELIMINARY H/rT4LC4M4Gtff S M BK jc* BURST EDO DRAWT BURST EDO DRAM FEATURES • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V


    OCR Scan     		PDF 048-cycle 26-Pin 000xB A8-A10 000x8 T41C T41C-4M