Untitled
Abstract: No abstract text available
Text: S−AV17 TOSHIBA RF POWER AMPLIFIER MODULE S−AV17 VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC 16 V DC Supply Voltage VCON 16 V Total Current IT 14 A
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400mW
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JDV2S09S
Abstract: No abstract text available
Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)
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JDV2S09S
000707EAA2
JDV2S09S
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MG90V2YS40
Abstract: General Instruments Bridge
Text: MG90V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG90V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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MG90V2YS40
MG90V2YS40
General Instruments Bridge
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MG240V1US41
Abstract: No abstract text available
Text: MG240V1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case High input impedance Enhancement-mode High speed : tf = 1.5µs Max. (IC = 240A) trr = 0.6µs (Max.)(IF = 240A)
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MG240V1US41
2-109A4A
MG240V1US41
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CMS07
Abstract: No abstract text available
Text: CMS07 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS07 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward Voltage: VFM = 0.45 V max Average Forward Current: IF (AV) = 2.0 A Repetitive Peak Reverse Voltage: VRRM = 30 V
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CMS07
CMS07
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1S1830
Abstract: 1S1885 1S1888 88 diode toshiba 1S1887
Text: 1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830, 1S1885, 1S1887, 1S1888 General Purpose Rectifier Applications • • Average Forward Current: IF AV = 1.0 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V, 1000 V
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1S1830
1S1885
1S1887
1S1888
1S1830,
1S1885,
1S1887,
1S1885
1S1887
1S1888
88 diode toshiba
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MG50J2YS50
Abstract: td 4950
Text: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.
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MG50J2YS50
2-94D1A
MG50J2YS50
td 4950
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CMS03
Abstract: No abstract text available
Text: CMS03 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS03 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward voltage: VFM = 0.45 V max Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS03
CMS03
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JDV2S02S
Abstract: No abstract text available
Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)
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JDV2S02S
000707EAA2
JDV2S02S
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diode bridge toshiba
Abstract: MG120V2YS40
Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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MG120V2YS40
2-109C1A
000707EAA2
diode bridge toshiba
MG120V2YS40
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TOSHIBA RF Power Module
Abstract: No abstract text available
Text: S−AU57 TOSHIBA RF POWER AMPLIFIER MODULE S−AU57 UHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND−HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power
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S-AU57
TOSHIBA RF Power Module
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MG150J2YS50
Abstract: mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50
Text: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode
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MG150J2YS50
2-95A1A
000707EAA2
MG150J2YS50
mg150j2y
diode bridge toshiba
MG150J2YS
IGBT MG150J2YS50
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RN1961FE
Abstract: RN1962FE RN1963FE RN1964FE RN1965FE RN1966FE RN2961FE RN2966FE all type transistor equivalent
Text: RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1961FE, RN1962FE, RN1963FE RN1964FE, RN1965FE, RN1966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •
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RN1961FE
RN1966FE
RN1961FE,
RN1962FE,
RN1963FE
RN1964FE,
RN1965FE,
RN2961FE
RN2966FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
RN2966FE
all type transistor equivalent
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CMS01
Abstract: No abstract text available
Text: CMS01 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS01 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward voltage: VFM = 0.37 V max Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS01
CMS01
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1R5BZ41
Abstract: 1R5GZ41
Text: 1R5BZ41,1R5GZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5BZ41, 1R5GZ41 General Purpose Rectifier Applications • Average Forward Current: IF AV = 1.5 A (Ta = 35°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400 V • Peak One Cycle Surge Forward Current (non repetitive): IFSM = 150 A
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1R5BZ41
1R5GZ41
1R5BZ41,
1R5BZ41
1R5GZ41
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JDV2S06S
Abstract: No abstract text available
Text: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)
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JDV2S06S
000707EAA2
JDV2S06S
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JDV2S10S
Abstract: No abstract text available
Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio • High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. • Low Series Resistance : rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)
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JDV2S10S
000707EAA2
JDV2S10S
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Untitled
Abstract: No abstract text available
Text: 1SV322 TOSHIBA 1 S V3 2 2 TOSHIBA DIODE T C X O /V C O • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C i V /C 4V = 4.3 Typ. : rs = 0.4 O (Typ.) Low Series Resistance Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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1SV322
500mVrms
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 5FWJ2CZ47M TO S H IB A SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 5FWJ2CZ47M SW ITCHING TYPE POWER SUPPLY A PP LIC A TIO N U n it in mm 10.3MAX. CONVERTER & CHOPPER APP LIC A TIO N • Repetitive Peak Reverse Voltage • Average Output Rectified Current : I q = 5A
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5FWJ2CZ47M
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1SV281
Abstract: 303E toshiba 27c
Text: 1SV281 TOSHIBA TO S H IB A V AR IA B LE CAPACITAN CE DIODE SILICON EPITAX IAL P LAN AR TYPE 1 SV281 VCO FOR V / U H F B A N D R AD IO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner.
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1SV281
0014g
1SV281
303E
toshiba 27c
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1SV282
Abstract: C25V
Text: TO SH IBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 2 CATV TUNING • Unit in mm High Capacitance Ratio : C2V/C25V = 12.5 TYP. 0.6 ± 0.1 ÍN O • Low Series Resistance : rs = 0 .6 0 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV282
C2V/C25V
0014g
1SV282
C25V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA U1FWJ44N TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U1FWJ44N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Low Forward Voltage : V f M ~ 0.37V Max. Average Forward Current : Ijr (AV)= 1-0A Repetitive Peak Reverse Voltage : V r r m = 30 V
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U1FWJ44N
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mark 1FL
Abstract: No abstract text available
Text: TO SH IBA U1FWJ44L TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U1FWJ44L Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Low Forward Voltage : V f M ~ 0.40V Max. Average Forward Current : Ijr (AV)= 1-0A Repetitive Peak Reverse Voltage : V r r m = 30V
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U1FWJ44L
mark 1FL
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 30GWJ2C48C,U30GWJ2C48C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30GWJ2C48C, U30GWJ2C48C SWITCHING TYPE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION • • • Repetitive Peak Reverse Voltage : V r r m = 40V Average Output Rectified Current : Iq = 30A
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30GWJ2C48C
U30GWJ2C48C
30GWJ2C48C,
30GWJ2C48C
12-10D1A
12-10D2A
18CJo---
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