Untitled
Abstract: No abstract text available
Text: QS72211, QS72221, QS72231, QS72241 PRELIMINARY High-Speed CMOS 512/1K/2K/4K x 9 Parallel Clocked FIFO Q QS72211 QS72241 FEATURES DESCRIPTION • 5 1 2 x 9 QS72211 • 1K X 9 (QS72221) 2K x 9 (QS72231) • 4K x 9 (QS72241) • Ultra-high speed 12-ns (83 MHz)
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QS72211,
QS72221,
QS72231,
QS72241
512/1K/2K/4K
QS72211
QS72211)
QS72221)
QS72231)
QS72241)
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Untitled
Abstract: No abstract text available
Text: S TANDARD PRODUCT PMC ISSUES PMC-Sierra, Inc. PM7322 RCMP-800 ROUTING CONTROL, MONITORING AND POLICING 800 Mbps FEATURES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements
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PM7322
RCMP-800
42x106
STS-12c
ODD3505
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CEJ65
Abstract: No abstract text available
Text: minim M 65898/M 65899 d a ta s h e e t 65,536 x 4 STATIC RAM DESCRIPTION . . . LOW STANDBY POWER 165 mW . TTL-COMPATIBLE INPUTS AND OUTPUTS . CAPABLE OF WITH STANDING GREATER THAN 2001 V ELECTROSTATIC DISCHARGE . OUTPUT ENABLE FEATURE OE (M-65899 ONLY) BICMOS FOR OPTIMUM SPEED/POWER
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65898/M
M-65899
M-65898
64Kx4
M-65899
QGD3377
65899/Rev
bfl45b
CEJ65
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inmos T414
Abstract: IMS T414 Transputer T414 IMST414 T414 inmos transputer reference manual transputer 7FFFFF84 22FC
Text: INMOS CORP 10E D | 4aG2b0fl 00G33S0 3 1 Ö nm oS C h a p te r 4 T - ^ ? -/7 -5 7 9 IMS T414 engineering data 107 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IN M O S CORP "T-Vf-/7 * £ 7 40 02 1, 68 0 0 0 3 3 5 1 I I s I
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T-47-/7-5
00D33S1
Link123Special
inmos T414
IMS T414
Transputer T414
IMST414
T414
inmos transputer reference manual
transputer
7FFFFF84
22FC
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CX486slc
Abstract: Headland Technology Product Group headland HT251 386SX LSI LOGIC CORP headland 386sx 77G2 headland technology t34l
Text: L S I LOGIC CORP/HEADLAND 55E D M3b77G2 00D33G3 b2b • H T I Headland l s ii h WH Technology Product Group T 'S M Î - O S HT25 3V Core Logic for 386SX Features • 25MHz operation at 2.7V to 3.6V • Flexible DRAM controller • • Stow and Self refresh DRAM modes
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M3b77G2
386SX
25MHz
512Kb,
005mm
020mm
386SX
HT25/X
CX486slc
Headland Technology Product Group
headland
HT251
LSI LOGIC CORP
headland 386sx
77G2
headland technology
t34l
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7246
Abstract: lt 7246
Text: MODEL 7 2 4 6 7/8" Diameter 10-Turn W i rewound Precision Potentiometer ELECTRICAL Resistance Range, Ohm s 10 to 125K Standard Resistance Tolerance ±5% M inim um Practical Resistance Tolerance ±3% Independent Linearity ±0.25% M inim um Practical Independent Linearity
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10-Turn
7246
lt 7246
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Untitled
Abstract: No abstract text available
Text: XICOR INC S5E D ^41743 Preliminary Information 1K 0003371 450 m s t X24C01A 1 2 8 x 8 B it S e r ia l E 2P R O M T - ^ U - V 2 r 2 jg FEATURES DESCRIPTION • 2.7V to 5.5V Power Supply • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 |iA
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X24C01A
X24C01A
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Untitled
Abstract: No abstract text available
Text: % M i c r o October 1994 PRELIM IN ARY L in e a r ML2340, ML2350 Single Supply, Programmable 8-Bit D/A Converters GENERAL DESCRIPTION FEATURES The M L2340 and M L2350 are CM OS voltage output, 8-bit D/A converters with an internal voltage reference and a HP interface. These devices are designed to be powered
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ML2340,
ML2350
L2340
L2350
L2350BM
L2350BIJ/12
L2350BCP/12
L2350CM
bOT341Ã
000337b
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Untitled
Abstract: No abstract text available
Text: High Performance Dual Channel Current Mode Controllers with ENABLE Description The CS-5651 are high perform ance, fixed frequency, dual current mode controllers specifically designed for O ff-Line and DC to DC converter applications. They offer the design
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CS-5651
CS-5651
CS-5651CN16
CS-5651CDW
EDb755b
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723B
Abstract: 723 voltage regulator internal diagram LAS723B 723 voltage regulator applications LAS723
Text: SEMTECH CORP 5flE D • 013^13^ 150mA POS. VOLTAGE REGULATORS LINEAR CONTROLLERS QQ03375 3GT M S E T LAS-723 LAS-723B ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Input Voltage LAS 723 LAS 723B V,N Input/Output Differential LA S 723 LA S 723B FEATURES • G uaranteed line regulation: 0 .0 0 8 %
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150mA
LAS-723
LAS-723B
723B
723 voltage regulator internal diagram
LAS723B
723 voltage regulator applications
LAS723
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2816 eeprom
Abstract: RAM 2816 DS1220AB DS1220AD VA10 2716 eprom
Text: DALLAS SEMICONDUCTOR CORP 3HE 21,14130 D 0 0 3 3 7 0 D 4 • DAL DS1220AB/AD T ^ - Z 3 - 3 “7 DS1220AB/AD 16K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN DESCRIPTION • Data retention In the absence of Vc0 • Data Is automatically protected during power
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D00337Q
DS1220AB/AD
28-pln
100ns,
120ns,
150ns,
200ns
DS1220
DS1210
2816 eeprom
RAM 2816
DS1220AB
DS1220AD
VA10
2716 eprom
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 5SE ]> V IIC R O N blllSMT G0G3372 271 MT5C1605 4K X 4 SRAM MRN " T -4 fc > -2 3 -0 % SRAM 4K X 4 SRAM FEATURES • High speed: 8’, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply
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G0G3372
MT5C1605
22-Pin
00337e
MT5C1606
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uPD95
Abstract: nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431
Text: NEC NEC Electronics Inc. CB-C8 0.5-Micron CMOS Cell-Based ASIC Design Manual March 1995 Document No. 70226-1 1995 NEC Electronics lnc./Printed in U.S.A. • b427525 ÜGÔ3304 bT3 ■ ft CONTENTS CHAPTER 1 GENERAL DESCRIPTION.
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b427525
uPD95
nec 2561 equivalent
transistor tba 222 SH
NEC 2561
NEC open cad pwc
NEC 2561* D 431
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