M28W320BB
Abstract: M28W320BT
Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W320BT
M28W320BB
100ns
TFBGA47
M28W320BB
M28W320BT
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Untitled
Abstract: No abstract text available
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
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A0-A21
Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58WR064ET
M58WR064EB
54MHz
VFBGA56
A0-A21
CR10
M58WR064EB
M58WR064ET
VFBGA56
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code lock circuit flow chart
Abstract: M28W320ECB M28W320ECT M28W320
Text: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)
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M28W320ECT
M28W320ECB
100ns
TFBGA47
TSOP48
code lock circuit flow chart
M28W320ECB
M28W320ECT
M28W320
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DSP56000
Abstract: No abstract text available
Text: APPENDIX A MOTOROLA DSP OBJECT MODULE FORMAT OMF A.1 INTRODUCTION The object module format (OMF) produced by the DSP cross-assembler is an ASCII file consisting of variable-length text records. Records may be defined with a fixed number of fields or contain repeating instances of a given field (such as instructions or data). Fields
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C4801B
06F481
F19CEA
2000CA
2000A2
C480B6
DSP56000
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29070* intel
Abstract: transistor w18 57 small
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed
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28F320W18,
28F640W18,
28F128W18
56-Ball
32-Mbit)
64-Mbit)
128-Mbit)
29070* intel
transistor w18 57 small
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BD 147
Abstract: PIC40 PIC18F2450 usb 18f2450 PIC18F2450 pic18 T0CON PIC18F4450 DS30000 PIC18F USB 211 NC D005
Text: PIC18F2450/4450 数据手册 采用纳瓦技术的 28/40/44 引脚高性能 12 MIPS 增强型闪存 USB 单片机 2007 Microchip Technology Inc. 超前信息 DS39760A_CN 请注意以下有关 Microchip 器件代码保护功能的要点： • Microchip 的产品均达到 Microchip 数据手册中所述的技术指标。
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PIC18F2450/4450
DS39760A
BD 147
PIC40
PIC18F2450 usb
18f2450
PIC18F2450
pic18 T0CON
PIC18F4450
DS30000
PIC18F USB
211 NC D005
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39760D
Abstract: PIC18F2450 usb PIC18 interrupt example C codes regulator D313 example C codes pic18f for mmc card transistor D313 circuit diagram application power supply with regulator D313 18f2450 PIC18F2450 usb connection to PIC18f4450
Text: PIC18F2450/4450 Data Sheet 24/40/44-Pin High-Performance, 12 MIPS, Enhanced Flash, USB Microcontrollers with nanoWatt Technology 2008 Microchip Technology Inc. DS39760D Note the following details of the code protection feature on Microchip devices: •
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PIC18F2450/4450
24/40/44-Pin
DS39760D
DS39760D-page
39760D
PIC18F2450 usb
PIC18 interrupt example C codes
regulator D313
example C codes pic18f for mmc card
transistor D313 circuit diagram application
power supply with regulator D313
18f2450
PIC18F2450
usb connection to PIC18f4450
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Untitled
Abstract: No abstract text available
Text: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V
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M36WT864TF
M36WT864BF
100ns
M36WT864TF:
8810h
M36WT864BF:
8811h
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Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KL70ZA6F
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88CAh
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA
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M58CR064C
M58CR064D
54MHz
100ns
TFBGA56
A0-A21
88CAh
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Untitled
Abstract: No abstract text available
Text: M58CR032C M58CR032D 32 Mbit 2Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA
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M58CR032C
M58CR032D
54MHz
100ns
TFBGA56
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Untitled
Abstract: No abstract text available
Text: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ MULTIPLEXED ADDRESS/DATA ■
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M58MR032C
M58MR032D
40MHz
100ns
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M28W320CT M28W320CB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 2.7V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W320CT
M28W320CB
100ns
BGA47
TFBGA47
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M29W640
Abstract: 8858H
Text: M28W320FST M28W320FSB M28W320FSU M28W640FST M28W640FSB M28W640FSU 32 Mbit 2Mb x16 and 64 Mbit (4Mb x16) 3V supply, Boot Block and Uniform Block, Secure Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Supply voltage – VDDQ= 2.7V to 3.6V Input/Output Voltage
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M28W320FST
M28W320FSB
M28W320FSU
M28W640FST
M28W640FSB
M28W640FSU
64-KWord
M28W320FSU:
M28W640FSU:
M29W640
8858H
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Untitled
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA
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M58CR064C
M58CR064D
54MHz
100ns
TFBGA56
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power supply aps 231
Abstract: 8857H 28F128W30 28F320W30 28F640W30 intel DOC
Text: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O 28F320W30, 28F640W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed
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28F320W30,
28F640W30,
28F128W30
128-bit
32-Mbit)
64-Mbit)
128-Mbit)
power supply aps 231
8857H
28F128W30
28F320W30
28F640W30
intel DOC
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M28W320CB
Abstract: M28W320CT
Text: M28W320CT M28W320CB 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast
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M28W320CT
M28W320CB
100ns
TSOP48
BGA47
M28W320CB
M28W320CT
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX28F640C3BT/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C
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MX28F640C3BT/B
64M-BIT
90/120ns
32Kword
PM1084
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR064K
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PM1084
Abstract: No abstract text available
Text: MX28F640C3BT/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40°C~85°C
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MX28F640C3BT/B
64M-BIT
90/120ns
32Kword
PM1084
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M58WR032QB
Abstract: CR10 M58WR016QB M58WR016QT M58WR032QT VFBGA56 8812h
Text: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58WR016QT
M58WR016QB
M58WR032QT
M58WR032QB
66MHz
M58WR032QB
CR10
M58WR016QB
VFBGA56
8812h
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CR10
Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)
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M58WR064HU
M58WR064HL
66MHz
CR10
CR14
M58WR064HL
M58WR064HU
VFBGA44
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Stacked 4MB NOR FLASH & SRAM with AD multiplexed
Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed
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x32SH
x16SB
x16/x32
Stacked 4MB NOR FLASH & SRAM with AD multiplexed
FLASH MEMORY 38F
FLASH MEMORY 48F
Numonyx admux
48F4400
numonyx 106 ball
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