Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    0.7 UM CMOS PROCESS PARAMETERS Search Results

    0.7 UM CMOS PROCESS PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    0.7 UM CMOS PROCESS PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMOS 7

    Abstract: 135C F9906-05 CMOS7
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: F9906-05 DATE: Product Affected: 723642Y Product Family: FIFO 723622/23/24/26/32/33/34/36/42/43/44/46Y Manufacturing Location Affected:


    Original     		PDF F9906-05 723642Y 723622/23/24/26/32/33/34/36/42/43/44/46Y shrin-03 CMOS 7 135C F9906-05 CMOS7

    bsim3 model

    Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
    Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications


    Original     		PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


    Original     		PDF

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


    Original     		PDF

    HBT 01 - 05

    Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
    Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna


    Original     		PDF 90GHz, 90GHz HBT 01 - 05 dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G

    CMOS

    Abstract: No abstract text available
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


    Original     		PDF

    NMOS depletion pspice model

    Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


    Original     		PDF

    TIA AGC application note

    Abstract: MC20L10 MC2010 photodiode die WAFER 0201X-PBD-001
    Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. MC2010 TIA with AGC for 3.3V Applications to 1.25 Gbps The MC2010 is a transimpedance amplifier TIA with AGC manufactured in a sub-micron, CMOS process. The


    Original     		PDF MC2010 MC2010 25Gbps 02010-DSH-001-C M02017 TIA AGC application note MC20L10 photodiode die WAFER 0201X-PBD-001

    XC6SLX45t-fgg484

    Abstract: XC6SLX16-CSG324 XC6SLX100-FGG676 XC6SLX45 FGG484 x2 type ac capacitor XC6SLX16 FIT rate xc3s3400a UG116 XC95288 Virtex-6 reflow
    Text: Device Reliability Report Third Quarter 2010 UG116 v5.11 November 1, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the “Documentation”) to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the


    Original     		PDF UG116 611GU FGG676 FFG1152 XC6SLX45t-fgg484 XC6SLX16-CSG324 XC6SLX100-FGG676 XC6SLX45 FGG484 x2 type ac capacitor XC6SLX16 FIT rate xc3s3400a UG116 XC95288 Virtex-6 reflow

    Virtex-6 reflow

    Abstract: WS609 xc3s3400a xcv400e-b UG116 XCS20XL pqg208 UG-116 XC1702L XCE4VSX25 xc3s500e fg320
    Text: Device Reliability Report First Quarter 2010 UG116 v5.9 May 4, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, p∅ost, or transmit the


    Original     		PDF UG116 611GU FGG676 FFG1152 Virtex-6 reflow WS609 xc3s3400a xcv400e-b UG116 XCS20XL pqg208 UG-116 XC1702L XCE4VSX25 xc3s500e fg320

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


    Original     		PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


    Original     		PDF

    KM62256CLP-7

    Abstract: No abstract text available
    Text: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family


    OCR Scan     		PDF KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP KM62256CL KM62256CL- KM62256C KM62256CLP-7

    Untitled

    Abstract: No abstract text available
    Text: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vec CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.7 uM CMOS • Organization: 32K x 8 • Power Supply Voltage KM82V256C family: 3.3V +/- 0.3V KM62U256C family: 3.0V +/- 0.3V


    OCR Scan     		PDF KM62V256C, KM62U256C 32Kx8 KM82V256C 28-SOP, 28-TSOP KM62V256C 0023bbÃ

    KM62V256CLE

    Abstract: No abstract text available
    Text: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS • Organization : 32K x 8 • Power Supply Voltage KM62V256C family : 3.3V +/- 0.3V KM62U256C family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM62V256C, KM62U256C 32Kx8 KM62V256C 28-SOP, 28-TSOP KM62V256CLE

    KM62V256CLTGE

    Abstract: KM62V256C 001.2509
    Text: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.7 uM CMOS • Organization: 32K x 8 • Power Supply Voltage . KM62V256C family : 3.3V +/- 0.3V KM62U256C fa m ily : 3.0V +/- 0.3V


    OCR Scan     		PDF KM62V256C, KM62U256C 32Kx8 KM62V256C 28-SOP, 28-TSOP KM02U256C KM62V256CLTGE 001.2509

    KM62256

    Abstract: 26-SOP KM62256C KM62256CL KM62256CLE KM62256CLE-L KM62256CLI KM62256CL-L SRAM sheet samsung 32k x 8 sram CMOS 600 mill DIP
    Text: JL KM62256C CMOS SRAM ^ 9 If- IlfiL h s w ib g ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM \ FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.7 um CMOS Organization : 32K x 8 Power Supply Voltage : Single 5V +/-10% Low Data Retention Voltage : 2V Min


    OCR Scan     		PDF KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP KM62256C KM62256 26-SOP KM62256CL KM62256CLE KM62256CLE-L KM62256CLI KM62256CL-L SRAM sheet samsung 32k x 8 sram CMOS 600 mill DIP

    Untitled

    Abstract: No abstract text available
    Text: , . , Universal Semiconduc tot HIGH RELIABILITY FAST CMOS GATE arrays FEATURES : ISO-2/ISO-3/ISO-5 GATE ARRAY DESCRIPTION . The ISO 2 /3 /5 series o f silicon gate CMOS arrays are high perform ance fam ilies o f eleven arrays each w ifh co m p le xity ranging from 100 to 2 4 0 0 equivalent gates and a m axim um


    OCR Scan     		PDF 410x410

    Pioneer SSA 40

    Abstract: G4060 LT 6732 IMI6140 G4420
    Text: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^


    OCR Scan     		PDF 885-10K Pioneer SSA 40 G4060 LT 6732 IMI6140 G4420

    transistor bL P09

    Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
    Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its


    OCR Scan     		PDF MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M

    Pioneer SSA 40

    Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
    Text: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible


    OCR Scan     		PDF

    IMI6000

    Abstract: IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140
    Text: • ■ ■ ■ ■ PRODUCT FEATURES P R O D U C T D E S C R IP T IO N 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metalization Fully autoroutable 820 to 6200 2-input NAND equivalents The IMI6000 family of gate arrays from International


    OCR Scan     		PDF IMI6000 IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140

    Untitled

    Abstract: No abstract text available
    Text: TEM S e m i c o n d u cIC tors L65664 8 K x 8 / 3.3 Volts Very Low Power CMOS SRAM Introduction The L65664 is a very low power CMOS static RAM organized as 8192 x 8 bits. It is manufactured using the TEMIC high performance SCMOS technology. current typical value = 0.1 |iA with a fast access time of


    OCR Scan     		PDF L65664 L65664 65664K